PC3200
Abstract: DIMM DDR400 PC3200 DDR400
Text: Memory Module Data Sheet L2572Y37 2GB 256M x 72-bit ECC Registered DDR400 PC3200 SPECIFICATIONS; • 2GB (256M x 72-bit) Registered DDR400 DIMM • Error Check Correction (ECC) Capability • FBGA 128M x 4 (32M x 4 bit x 4 Bank/200Mhz) x Thirty Six DRAM
|
Original
|
L2572Y37
72-bit
DDR400
PC3200)
72-bit)
DDR400
Bank/200Mhz)
184-pin
120ns
PC3200
DIMM DDR400 PC3200
|
PDF
|
60ns
Abstract: memory module DDR333 PC2700
Text: Memory Module Data Sheet L2572Y36 2GB 256M x 72-bit ECC Registered DDR333 PC2700 SPECIFICATIONS; • 2GB (256M x 72-bit) Registered DDR333 DIMM • Error Check Correction (ECC) Capability • 60ball FBGA 128M x 4 (32M x 4 bit x 4 Bank/200Mhz) x Thirty Six DRAM
|
Original
|
L2572Y36
72-bit
DDR333
PC2700)
72-bit)
DDR333
60ball
Bank/200Mhz)
184-pin
60ns
memory module
PC2700
|
PDF
|
DDR2-400
Abstract: 32MX4 PC3200
Text: Memory Module Data Sheet L2572337-R41H2W1F 2GB 256M x 72-bit DDR2 400 PC3200 SPECIFICATIONS; • 2GB (256M x 72-bit) Registered DDR2 400 DIMM, 1 RANK • Error Check Correction (ECC) Capability • 68-ball FBGA 256M x 4 (32M x 4 bit x 8 Bank) x Eighteen DRAM
|
Original
|
L2572337-R41H2W1F
72-bit
PC3200)
72-bit)
68-ball
240-pin
5000ps
DDR2-400
32MX4
PC3200
|
PDF
|
PC3200
Abstract: No abstract text available
Text: Memory Module Data Sheet L25723C7-R41H2W1F 2GB 256M x 72-bit DDR2 400 PC3200 SPECIFICATIONS; • 2GB (256M x 72-bit) Registered DDR2 400 DIMM, 2 Ranks • Error Check Correction (ECC) Capability • 68-ball FBGA 256M x 4 (32M x 4 bit x 8 Bank) x Eighteen DRAM
|
Original
|
L25723C7-R41H2W1F
72-bit
PC3200)
72-bit)
68-ball
240-pin
5000ps
PC3200
|
PDF
|
DDR333
Abstract: No abstract text available
Text: Memory Module Specification KVR333D4R25/2G 2GB 256M x 72-Bit DDR333 CL2.5 Registered 184-Pin ECC DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR333 CL2.5 SDRAM (Synchronous DRAM) "dual rank" Registered ECC memory module. The components on this module include thirty-six 128M x 4-bit (32M x 4-Bit x 4 bank) DDR333
|
Original
|
KVR333D4R25/2G
72-Bit
DDR333
184-Pin
2048MB)
DDR333
000ns
|
PDF
|
DDR400
Abstract: KVR400D4R3A
Text: Memory Module Specification KVR400D4R3A/2G 2GB 256M x 72-Bit DDR400 CL3 Registered 184-Pin ECC DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR400 CL3 SDRAM (Synchronous DRAM) "dual rank" Registered ECC memory module. The components on this module include thirty-six 128M x 4-bit (32M x 4-Bit x 4 bank) DDR400
|
Original
|
KVR400D4R3A/2G
72-Bit
DDR400
184-Pin
2048MB)
DDR400
000ns
KVR400D4R3A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Memory Module Specification KVR400D2N3/2G 2GB 256M x 64-Bit DDR2-400 CL3 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 64-bit 2GB DDR2-400 CL3 SDRAM (Synchronous DRAM) memory module. The components on this module include sixteen 128M x 8-bit (32M x 8-bit x 4 Bank) DDR2-400 SDRAM in FBGA packages. This 240-pin
|
Original
|
KVR400D2N3/2G
64-Bit
DDR2-400
240-Pin
64-bit
DDR2-400
240-pin
000ns
KVR400D2N3/2G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Memory Module Specification KVR400D2E3/2G 2GB 256M x 72-Bit DDR2-400 CL3 ECC 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR2-400 CL3 SDRAM (Synchronous DRAM) ECC memory module. The components on this module include eighteen 128M x 8-bit (32M x 8-bit x 4 Bank) DDR2-400 SDRAM in FBGA
|
Original
|
KVR400D2E3/2G
72-Bit
DDR2-400
240-Pin
2048MB)
DDR2-400
105ns
|
PDF
|
DDR2-400
Abstract: No abstract text available
Text: Memory Module Specification KVR400D2S4R3/2G 2GB 256M x 72-Bit DDR2-400 CL3 Registered 240-Pin ECC DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR2-400 CL3 SDRAM (Synchronous DRAM) "single rank" registered ECC memory module.The components on this module include eighteen 256M x 4-bit (32M x 4-bit x 8 Bank) DDR2-400
|
Original
|
KVR400D2S4R3/2G
72-Bit
DDR2-400
240-Pin
2048MB)
DDR2-400
000ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EM47EM0888SBA Revision History Revision 0.1 Oct. 2011 -First release. Revision 0.2 (Apr. 2012) - Package dimension change – delete 9 x 10.5 mm2, add 8 x 10.5 mm2. Apr. 2012 1/39 www.eorex.com EM47EM0888SBA 2Gb (32Mx8Bank×8) Double DATA RATE 3 SDRAM Features
|
Original
|
EM47EM0888SBA
78Ball-FBGA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Memory Module Specification KVR533D2N4/2G 2GB 256M x 64-Bit DDR2-533 CL4 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 64-bit 2GB 2048MB DDR2-533 CL4 SDRAM (Synchronous DRAM) memory module. The components on this module include sixteen 128M x 8-bit (32M x 8-bit x 4 Bank) DDR2-533 SDRAM in FBGA packages. This 240pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical
|
Original
|
KVR533D2N4/2G
64-Bit
DDR2-533
240-Pin
2048MB)
DDR2-533
240pin
000ns
|
PDF
|
Tower
Abstract: 256Mx
Text: SL72R8R256M8H-A75AV 256M X 72 Bits 2GB SDRAM Registered 168-Pin DIMM ECC (PC133) FEATURES GENERAL DESCRIPTION • • • The SimpleTech SL72R8R256M8H-A75AV is a 256M x 72 bits Synchronous Dynamic RAM (SDRAM) Dual In-line Memory Module (DIMM). This module consists of thirty-six CMOS 32M
|
Original
|
SL72R8R256M8H-A75AV
168-Pin
PC133)
SL72R8R256M8H-A75AV
54-pin
400-mil
A0-A12
U0-U17
rA0-rA12:
Tower
256Mx
|
PDF
|
k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
|
Original
|
|
PDF
|
H9ccnnn
Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz
|
Original
|
166MHz
H55S2G62MFP-60M
54ball)
133MHz
H55S2G62MFP-75M
H55S2G22MFP-60M
90ball)
H9ccnnn
H9CKNNNB
H5MS1G22AFRE3M
H5MS2G22MFR-J3M
H5MS2G62
H55S2622JFR-60M
H9TKNNN2GDMP-LRNDM
DDR333
H5MS2G62AFR-J3M
H5MS1G22AFR-E3M
|
PDF
|
|
K4T1G164QF
Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
Text: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
|
Original
|
68Ball
10MAX
K4T1G164QF
1GB DDR2 4 banks
K4T51083QI-HCE7
K4T51163QI
K4T1G164QQ-HC
k4t51083qi
m470t5663
K4T1G164QE
samsung ddr2 240pin 1gb
K4T1G164QE-HC
|
PDF
|
EDE2116ACBG
Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3
|
Original
|
E1610E30
240-pin
M01E0706
EDE2116ACBG
EDJ2116DASE
ECM220ACBCN
ELPIDA EDJ2116DASE
EDE1116AGBG
EDE2116ACBG-1J-F
GDDR5
EDJ1108DBSE-GN-F
ELPIDA lpddr
EDE1116AGBG-1J-F
|
PDF
|
EDE2116ACBG
Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 Ver.9.0 Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3
|
Original
|
E1454E90
240-pin
M01E0706
EDE2116ACBG
EDE2116ACBG-1J-F
EDE1116AGBG-1J-F
DDR3-800D
ELPIDA lpddr
DDR3-800E
EDE1116AGBG
EDJ1108DBSE
DDR3 layout
EDE1032AGBG
|
PDF
|
DDR2 SDRAM
Abstract: DDR2 TSOP II elpida ELPIDA DDR2 DDR2-400 DDR2-533 DDR2-667 90nm-based 256Mx4 80nm
Text: DDR2 SDRAM Feature Comparison of DDR2 SDRAM, DDR SDRAM and SDRAM DDR2 SDRAM 200/266/333/400MHz 400/533/667/800Mbps x4/x8/x16 4bits Differential clock 4, 8 Differential data strobe 1.8V SSTL_18 3, 4, 5 clock AL+CL AL+CL -1 0, 1, 2, 3, 4 clock Support Support
|
Original
|
200/266/333/400MHz
400/533/667/800Mbps
x4/x8/x16
100/133/166/200MHz
200/266/333/400Mbps
x4/x8/x16/x32
800Mbps*
DDR2-667
DDR2-533
DDR2-400
DDR2 SDRAM
DDR2
TSOP II elpida
ELPIDA DDR2
DDR2-400
DDR2-533
DDR2-667
90nm-based
256Mx4
80nm
|
PDF
|
EDJ2116DASE
Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3
|
Original
|
J1610E30
240-pin
EDU1032AABG
136-FBGA
M01J0706
TEL033281-1563
TEL066390-8727
EDJ2116DASE
EDE2116ACBG
ECM220ACBCN
ELPIDA EDJ2116DASE
EDJ1108DBSE
EDE1032AGBG
GDDR5
EDX1032BASE
DDR3-1333H
EDE1116AGBG
|
PDF
|
w3j128m72
Abstract: ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32
Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 Part Number W3J256M32G-XNBXƒ W3J128M64G-XNBXƒ W3J128M72G-XNBXƒ W3J2256M16G-XNBXƒ
|
Original
|
W3J256M32G-XNBX
W3J128M64G-XNBX
W3J128M72G-XNBX
W3J2256M16G-XNBX
W3H32M64E-XSBX
W3H32M72E-XSB2X
W3H64M64E-XSBX
W3H64M72E-XSBX
W3H128M72E-XSBX
W3H128M64E-XSBX
w3j128m72
ddr sram 256mb
2.5 pata
DDR2 128M x 32
W3H128M72E-XSBX
256mb EEPROM Memory
W3J128M72G-XNBX
NAND Flash Qualification Reliability
WEDPZ512K72V-XBX
DDR2 x32
|
PDF
|
PC2-6400
Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
Text: セレクションガイド DRAM セレクションガイド Document No. J1241E80 Ver.8.0 Date Published August 2008 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008 DRAM セレクションガイド 目 次 1. DDR3
|
Original
|
J1241E80
240-pin
204-pin
x32/x16
512Mbit
EDX5116ADSE
104-FBGA
PC2-6400
DDR3-800D
PC3-8500
DDR3-1066E
DDR3-1333G
pc2-5300
DDR3-800E
ddr3 4gb ddp
EDD1232
ELPIDA DRAM selection guide
|
PDF
|
samsung 1Gb nand flash
Abstract: samsung 2GB Nand flash 128M NAND Flash Memory 512M x 8 Bit NAND Flash Memory K9K1G08U0M-YCB0 SAMSUNG NAND FLASH "NAND Flash" 8 port NAND flash memory SRAM 134,217,728 x 4 K9K1G08U0M
Text: 新亞電子科技有限公司 SemiRim Limited. 01A, 4/F, 8 Tai Chung Road 香港荃灣大涌道 8 號 TW, NT 4 樓 01A 室 Tel: 852 2405.0798 Fax: (852) 2490.1898 Email: [email protected] Website: [email protected]
|
Original
|
K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
K9K1G08U0M
52tection
samsung 1Gb nand flash
samsung 2GB Nand flash
128M NAND Flash Memory
512M x 8 Bit NAND Flash Memory
K9K1G08U0M-YCB0
SAMSUNG NAND FLASH
"NAND Flash" 8 port
NAND flash memory
SRAM 134,217,728 x 4
|
PDF
|
vr4cu
Abstract: 945 mercury MOTHERBOARD CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram 128MB PC3200 DDR CL3 VR4CU647228D VR4CU287228E PC2100 spd 3465 ddr pc3200 64m 72 single rank IDD3P
Text: DDRI UNBUFFERED DIMM VR4CUxxxx28xxx MODULE CONFIGURATIONS Non-ECC Module Device Configuration Configuration 128MB 16M x 64 16M x 8 bit 8 VR4CU166428C(*)H 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)K 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)P 256MB
|
Original
|
VR4CUxxxx28xxx
128MB
VR4CU166428C(
256MB
VR4CU326428C(
vr4cu
945 mercury MOTHERBOARD CIRCUIT diagram
945 MOTHERBOARD CIRCUIT diagram
128MB PC3200 DDR CL3
VR4CU647228D
VR4CU287228E
PC2100
spd 3465
ddr pc3200 64m 72 single rank
IDD3P
|
PDF
|
K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
|
OCR Scan
|
120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
|
PDF
|