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    2MBI800U4G-120 Price and Stock

    Power Integrations 2SB315A-2MBI800U4G-120

    IC GATE DRVR HALF-BRIDGE MODULE
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    Power Integrations 2SB315B-2MBI800U4G-120

    IC GATE DRVR HALF-BRIDGE MODULE
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    Fuji Electric Co Ltd 2MBI800U4G-120

    Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current:1.2Ka; Collector Emitter Saturation Voltage:2.12V; Power Dissipation:4.8Kw; Operating Temperature Max:150°C; Igbt Termination:Tab; Transistor Mounting:Panel |Fuji Electric 2MBI800U4G-120
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    Newark 2MBI800U4G-120 Bulk 1
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    Bristol Electronics 2MBI800U4G-120 2
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    Fuji Electric Semiconductors 2MBI800U4G-120

    IGBT MOD.DIODE DUAL 800A 1200V U SERIES
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    Ozdisan Elektronik 2MBI800U4G-120
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      Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers