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    2N 690 Search Results

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    2N 690 Price and Stock

    Vishay Semiconductors VS-2N690

    SCR 600V 25A TO208AA
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    Central Semiconductor Corp 2N690

    SCR 600V 25A TO48
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    Central Semiconductor Corp 2N690A

    SCR 600V 25A TO48
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    Microchip Technology Inc 2N6901

    MOSFET N-CH 100V 1.69A TO39
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    Microchip Technology Inc JAN2N6901

    MOSFET N-CH 100V 1.69A TO205AF
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    2N 690 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N690 ABB Group Power Semiconductor Data Book 1976 Scan PDF
    2N690 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
    2N690 AEI Semiconductors Power Semiconductors Data Book 1974 Scan PDF
    2N690 Central Semiconductor Leaded Thyristor SCR Scan PDF
    2N690 General Electric Semiconductor Data Book 1971 Scan PDF
    2N690 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N690 General Electric 25A silicon controlled rectifier. Vrsom 720V. Scan PDF
    2N690 International Rectifier (2N681 -2N692) 25 AND 35 AMP RMS SCRS Scan PDF
    2N690 International Rectifier Phase Control Thyristors Scan PDF
    2N690 International Rectifier 25 A RMS SCR Scan PDF
    2N690 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Thyristor Modules, SCRs and Photovoltaic Relays and Isolators Scan PDF
    2N690 Knox Semiconductor 25 and 35 Amp RMS SCRs Scan PDF
    2N690 Loras Industries SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 Scan PDF
    2N690 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N690 Motorola The European Selection Data Book 1976 Scan PDF
    2N690 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N690 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N690 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N690 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N690 Unknown Shortform Electronic Component Datasheets Short Form PDF

    2N 690 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT WIREWOUND CHIP INDUCTOR Dimensions in inches mm Inductance Tolerance Coded Dash Numbers B ±0.15nH S ±0.30nH G ±2% J ±5% K ±10% M ±20% How to order code Packaging 555-0402 555-0603/0805 555-1008 Basic Part No. -1N-0 -2N-0 -2N-2 -2N-7 -3N-3


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    PDF -10-N -12-N -15-N -18-N -22-N -27-N -33-N -47-N -56-N -68-N

    FX2N-128MR

    Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
    Text: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR


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    PDF 2N-16EX 2N-32MR E-08014 D-40880 S-20123 H-1124 CH-8309 FX2N-128MR FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR

    NMOS2

    Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
    Text: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer


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    PDF AF9902M 9902M NMOS2 transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter

    2N AND 2P-CHANNEL ENHANCEMENT

    Abstract: No abstract text available
    Text: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter


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    PDF AP9932GM 100us 100ms 186/W 2N AND 2P-CHANNEL ENHANCEMENT

    Untitled

    Abstract: No abstract text available
    Text: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Simple Drive Requirement  Low On-resistance  Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter N1D/P1D


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    PDF AP9932GM 100us 100ms

    DS3738

    Abstract: SP8400 SP8401 SP8402 SP8402/KG/MPES
    Text: SP8402 Very Low Phase Noise Divider by 2N DS3738 - 2.1 March 1994 The SP8402 is a very low phase noise divider which divides by powers of two. The S0, S1, S2 data inputs select the division ratio in the range 21 to 28. Special circuits techniques have been


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    PDF SP8402 DS3738 SP8402 SP8400 SP8401 160dBc/Hz SP8402/KG/MPES

    TR1210

    Abstract: BTW 600 2N688 2N1849 BTW 67 1850-A
    Text: 71C D I S G S-THOMSON 7 c!H,:ìa 3 7 GGGMTMG *i | r-ZS~ ~ /y THOR3SOM SEMICONDUCTORS metal case thyristors < 100 Arms ^amb •o Typei Vrrm • t sm 10 ms V DRM A 16 Arms / Tcase 2N 1843 A 2N 1844 A 2N 1846 A 2N 1848 A 2N 1849 A 2N 1850 A TR 6010 TR 7010


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    PDF BTW39- CB-267) TR1210 BTW 600 2N688 2N1849 BTW 67 1850-A

    2N 690 SCR

    Abstract: 136 2n SCR 2N MS210A
    Text: / T 7 SGS-THOMSON 2N 682 — > 2N 692 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 682 —> 2N 692 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology.


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    PDF 400Hz 2N 690 SCR 136 2n SCR 2N MS210A

    2N 690 SCR

    Abstract: 2N692
    Text: SGS-THOMSON C RfilD g [llL[i©¥^(Q KgQ©i 2N 682 — > 2N 692 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 682 —> 2N 692 Family of Silicon Controlled Rectifiers uses a high performance glass passivated


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    PDF 400Hz 2N 690 SCR 2N692

    btw 600

    Abstract: 481200 BTW 66 BTW67-1000N BTW 67 BTW48-200 10MSA BTW50-100 2N681 2N685
    Text: thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF Tamb = 25 °C Types •o Vr r m ■t s m 10 ms ■r m @ v r r m ■d m @ V q r m Tj max Vg t •g t A max (mA) max (V) max (mA) 1 40 V DRM (A) (V) 25 Arms / Tcase = 65°C 2N681 2N 682 2N 683 2N 685 2N 6 8 7


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    PDF 2N681 2N682 2N685 2N687 2N688 2N689 2N690 2N691 2N692 28UNF* btw 600 481200 BTW 66 BTW67-1000N BTW 67 BTW48-200 10MSA BTW50-100

    SST5484

    Abstract: No abstract text available
    Text: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)


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    PDF 2N/SST5484 2N5484 2N5485 2N5486 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486

    SCR 2N 689

    Abstract: 2n 690
    Text: In te rn a tio n a l IC2R Rectifier Phase Control SCR VM M / Part VDRM Number Fax on Cose Demand Outline Number Key 'iSM 1RMS V (A) 2N 685 200 16 2N 686 250 16 2N 687 300 16 *T(AV) @ Tc VGT 1GT ' f a dv/dt RQK(DC) (<») (b) (°C) (A) (A) 25 65 145 150 2


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    PDF 2N691 TQ-209AE O-118) O-209AC O-208AD O-209AB O-208AC SCR 2N 689 2n 690

    TX2N1724

    Abstract: 2N1724 2N1722 ADE350
    Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­


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    PDF MIL-S-19500/262F MIL-S-19500/262E 2N1722, TX2N1722, 2N1724, TX2N1724 1969-343-225/J16 TX2N1724 2N1724 2N1722 ADE350

    c45 scr

    Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
    Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00


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    PDF 2N1909-16 2N1792-98 CA-20 Vis-20 c45 scr scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350

    2N681

    Abstract: LT 5226 2N5204 2n6812 3081A 2n6819 transistor BF 257 LT 5206 2N5204 Series 2N683
    Text: Data Sheet No. PD-3.081A INTERNATIONAL RECTIFIER I“R 2NS81 & SN5S04 SERIES 25 and 35 Amp RMS SCRs D escription/Features Major Ratings and Characteristics 2N 6 B 1 -9 2 2 N 5 2 0 4 -0 7 ' t r m s 25 35 lT (A V ) 16 * 22* - 6 5 to 6 5 * @ TC - 4 0 to 4 0


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    PDF SN681 2IM5204 2n6b1-92 2n5204-07 1/4-28UNF-2A 2N5204 2N681 LT 5226 2n6812 3081A 2n6819 transistor BF 257 LT 5206 2N5204 Series 2N683

    2N389

    Abstract: HJ39 l73a 2N424 transistor T K 2056 on 341 j340 transistor abe 444
    Text: KTL-S-19500A73A i M llw - MIL-S-19500/173 KAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N«4 t m . im«n4fleatlon 1b mandatory far use tor all Departments and Agendas of tho Department of Dafenae. 1. SCOPE 1.1 Seopo- This specification coven the detail requirement« for hi#t power, silicon, KPN, tran­


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    PDF MIL-S-19500/173A MIL-S-19500/173 2N389 2N424 MIL-S-19500 2H389 2N424 HJ39 l73a transistor T K 2056 on 341 j340 transistor abe 444

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


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    PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor

    2n3375

    Abstract: 2n3375 transistor 2N3553
    Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes


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    PDF 2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor

    Untitled

    Abstract: No abstract text available
    Text: D nO .2n 0n +0.03 -0.08 nDI A. TH15 DRAWING AND DESIGN HEREON CON­ S TITU TE S A PROPRIETARY DESIGN OF PACKARD E LEC TR IC D IV IS IO N AND IS N O T TO BE DUPLICATED OR R EPR O D U C ED W ITH­ OUT AUTHORITY OF PACKARD E' ECTRIC D IV IS IO N . _


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    PDF 25MY89 30JA01 C04D2169

    RCA scr package N TO-8

    Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
    Text: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228


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    PDF 75AdPMl S2400A S3704A S3714A 2N3528 S2400B 2N3228 S3700B S3704B S2710B RCA scr package N TO-8 rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2N4102 ignition tci

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    LT 5226

    Abstract: N2S10 2N681 2N5204 2N682 2N683 2N685 2N688 2N689 2N690
    Text: Data Sheet No. PD-3.081A IN T E R N A T IO N A L R E C T IF IE R I“R 2NS81 & SN5S04 SERIES 25 and 35 Amp RMS SCRs D escription/Features Major Ratings and Characteristics 2N 6 B 1 -9 2 2 N 5 2 0 4 -0 7 't r m s 25 35 lT ( A V ) 16* 22* - 6 5 to 6 5 * @ TC


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    PDF SN681 2IM5204 2n6b1-92 2n5204-07 1/4-28UNF-2A 2N5204 LT 5226 N2S10 2N681 2N682 2N683 2N685 2N688 2N689 2N690

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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