2N0615 Search Results

2N0615 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N0615		Infineon Technologies	Published by		Original	PDF

2N0615 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N0615 Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15 Text: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package	Original	PDF	SPD30N06S2-15 P-TO252 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252
2N0615 Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15 Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-15 Package Ordering Code	Original	PDF	SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15
2N0615 Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15 Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253	Original	PDF	SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15
2N0615 Abstract: SPD30N06S2-15 Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253	Original	PDF	SPD30N06S2-15 SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, 2N0615
2N0615 Abstract: P-TO252 SPD30N06S2-15 Text: Preliminary data SPD30N06S2-15 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS • Drain-source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 14.7 mΩ 30 A	Original	PDF	SPD30N06S2-15 P-TO252 Q67040-S4253 2N0615 2N0615 P-TO252 SPD30N06S2-15
Untitled Abstract: No abstract text available Text: IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 14.7 mΩ 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11	Original	PDF	IPD30N06S2-15 PG-TO252-3-11 2N0615
2N0615 Abstract: IPD30N06S2-15 ANPS071E PG-TO252-3-11 Text: IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 14.7 mΩ 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11	Original	PDF	IPD30N06S2-15 PG-TO252-3-11 2N0615 2N0615 IPD30N06S2-15 ANPS071E PG-TO252-3-11