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    CTS Corporation 532N14705CTT

    XTAL OSC TCXO 14.7456MHZ SNWV
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    CTS Corporation 532N14720ITT

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    CTS Corporation 532N14725DTT

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    CTS Corporation 532N14710DTT

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    CTS Corporation 532N14715CTT

    XTAL OSC TCXO 14.7456MHZ SNWV
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    2N147 Datasheets (145)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N147 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N147 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N147 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N147 Unknown Vintage Transistor Datasheets Scan PDF
    2N147 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N147 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N147 Unknown GE Transistor Specifications Scan PDF
    2N147 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1470 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N1470 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1470 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1470 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1470 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1470 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1470 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1470 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1470 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1471 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1471 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1471 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N147 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1480

    Abstract: 2N1482 2N1479 2N1481
    Text: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current


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    PDF MIL-PRF-19500/207 2N1479 2N1480 2N1481 2N1482 CHA1479, 2N1480 2N1482 2N1479 2N1481

    2n1482

    Abstract: No abstract text available
    Text: 2N14792N1482 Qualified Levels: JAN NPN Silicon Power Transistor Available on commercial versions Qualified per MIL-S-19500/207 DESCRIPTION This family of 2N1479 through 2N1482 medium-power, planar transistors are military qualified to the JAN level for high-reliability applications.


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    PDF 2N1479 2N1482 MIL-S-19500/207 2N1479 2N1482 MIL-S-19500/207. T4-LDS-0325,

    Untitled

    Abstract: No abstract text available
    Text: 2N1477 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1477

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    Abstract: No abstract text available
    Text: 2N1476 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1476

    Untitled

    Abstract: No abstract text available
    Text: 2N1474A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1474A

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    Abstract: No abstract text available
    Text: 2N1473 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.


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    PDF 2N1473

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    Abstract: No abstract text available
    Text: 2N1475 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1475

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    Abstract: No abstract text available
    Text: 2N1474 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1474

    2N1482

    Abstract: 2N1479 2N1480 2N1481
    Text: TECHNICAL DATA 2N1479 JAN, JTX, JTXV 2N1480 JAN, JTX, JTXV 2N1481 JAN, JTX, JTXV 2N1482 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/207 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    PDF 2N1479 2N1480 2N1481 2N1482 MIL-PRF-19500/207 2N1479 2N1481 2N1480 2N1482 O-51481,

    2N4355

    Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
    Text: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233


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    PDF 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 2N4355 KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M

    Untitled

    Abstract: No abstract text available
    Text: 2N1479 Si NPN Power BJT 14.77 Transistors Transistors Bipolar Si NPN Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1479 Online Store 2N1479 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1479 2N1479 com/2n1479

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    Abstract: No abstract text available
    Text: 2N1478 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â


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    PDF 2N1478

    Untitled

    Abstract: No abstract text available
    Text: 2N1471 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)7.0 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1471

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


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    PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2N3440A

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) [email protected]/,02 5


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    PDF O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A

    AP1131

    Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
    Text: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486


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    PDF M35c15 2N1479 2N1480 2N1486 2N1700 2N2102 2N1719 2N1720 2N1721 2N1889 AP1131 2N1718 2n1482 2N2990 2N1481

    JAN2N5339

    Abstract: JANTX2N4150 JANS2N3439
    Text: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S


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    PDF

    2N1480

    Abstract: MARKING 333 transistor C200 2N1479 2N1481 2N1482 SMA-KE 434 MARKING
    Text: à ilII _ C _ 1 Û C r t A /'»ftl/'/PI \ m iu - j- i 7JUU/ zu/V-^ELj 9 December 1 9 6 6 bUFfcKbtülNÜ AA II -.ç_io*;nn/on • « '« w v / ¿w7vo/Ei iu k ;\ 13 OrfntiAr 1 9 AA MILITARY SPECIFICATIO N TRANSISTOR, N PN , SILIC O N TYPES 2N1479, 2N 1480,2N 1481,2N 1482


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    PDF MIL-S-19500/207C MIL-S-19500/207B 2N1479, 2N1480/2N1481/2N1482 2N1479 -65to 2N1480 2N1481 MARKING 333 transistor C200 2N1482 SMA-KE 434 MARKING

    AP1131

    Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
    Text: 0043592 A P I ELECTRONICS INC _ _ _ P A R A M E T E R T A B L E S A P I EL ECTRONICS INC 2b 26C 00217 D lT | 0 0 4 3 5 ^ D 7": 3> J - o / □□□0217 L, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No 2N1479 2N1480 2N1486 2N1700


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    PDF 2N1479 2N1480 2N1486 2N1700 2N2102 2N1717 2N1718 2N1719 2N1720 2N1721 AP1131 2N1481 AP1125 AP1127 AP1128

    2N1720

    Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
    Text: 0043592 A P I ELECTRONICS INC 26 C _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b 00217 dY ^ D O M B S T E D □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486


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    PDF M35c15 2N1479 2N1480 2N1486 2N1700 2N2102 2N1719 2N1720 2N1721 2N1889 2N1481 AP1125 AP1127 AP1128

    Untitled

    Abstract: No abstract text available
    Text: I max = 0 .0 5 to lO A V cE O (SU S) = 4 0 -8 0 0 V fi = I to 5 0 MHz NPN TG-39/TO-5 Case 801 PNP Com ple­ ment PO @ VCEO (SUS) 1C (MAX) w w 2N1479 40 1.5 [email protected]/4 1.4 . 21.02 [email protected]/4 .25@ 60 5 150 1.5 2N1480 55 1.5 [email protected]/4 1.4®.2/.02 3®.2/4 .25® 100


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    PDF TG-39/TO-5 10/IB 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2n1701

    Abstract: 2N2035
    Text: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD


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    PDF fKT51 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2n1701 2N2035

    2H2904

    Abstract: 2NI483-86
    Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879


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    PDF 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714- 2N1722 2N1724 2N2015 2H2904

    2N1482

    Abstract: 2N1479 GG1C
    Text: i ~ 3 3 -Q 5 - cq Power Transistors 2N1479, 2N1480, 2N1481, 2N1482 HARRI S S E M I C O N D S E C T O R File Number 27E D • 43D2271 135 G G 1 C1772 T ■ HAS Silicon N-P-N Power Transistors G e n e ra l-P u rp o s e T yp e s fo r M e d iu m -P o w e r A p p lic a tio n s


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    PDF 2N1479, 2N1480, 2N1481, 2N1482 43D2271 92CS-I0450A2 2N1479 GG1C