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    2N167 Search Results

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    2N167 Price and Stock

    Solid State Devices Inc (SSDI) 2N1671

    Transistor, 30V, 0.05A, 0.45W, To-5; Repetitive Peak Forward Current Itrm:25Μa; Peak Emitter Current:50Ma; Valley Current Iv:8Ma; No. Of Pins:3 Pin; Operating Temperature Max:140°C; Product Range:-; Msl:- Rohs Compliant: Yes |Solid State 2N1671
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N1671 Bulk 25
    • 1 -
    • 10 $66.34
    • 100 $66.34
    • 1000 $66.34
    • 10000 $66.34
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    Solid State Devices Inc (SSDI) 2N1671A

    Transistor, 30V, 0.05A, 0.45W, To-5; Repetitive Peak Forward Current Itrm:25Μa; Peak Emitter Current:50Ma; Valley Current Iv:8Ma; No. Of Pins:3 Pin; Operating Temperature Max:140°C; Product Range:-; Msl:- Rohs Compliant: Yes |Solid State 2N1671A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N1671A Bulk 25
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    • 10 -
    • 100 $99.77
    • 1000 $99.77
    • 10000 $99.77
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    Solid State Devices Inc (SSDI) 2N1671B

    Transistor, 30V, 0.05A, 0.45W, To-5; Repetitive Peak Forward Current Itrm:6Μa; Peak Emitter Current:50Ma; Valley Current Iv:8Ma; No. Of Pins:3 Pin; Operating Temperature Max:140°C; Product Range:-; Msl:- Rohs Compliant: Yes |Solid State 2N1671B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N1671B Bulk 25
    • 1 -
    • 10 $66.34
    • 100 $66.34
    • 1000 $66.34
    • 10000 $66.34
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    Solid State Manufacturing 2N1671A

    Transistor Unijunction 30V 450mW TO-5 | Solid State Manufacturing 2N1671A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 2N1671A Bulk 35 1
    • 1 $108.68
    • 10 $96.73
    • 100 $96.73
    • 1000 $96.73
    • 10000 $96.73
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    New Jersey Semiconductor Products, Inc. 2N1671A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N1671A 404 1
    • 1 $174.4223
    • 10 $174.4223
    • 100 $128.2004
    • 1000 $128.2004
    • 10000 $128.2004
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    2N167 Datasheets (161)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N167 Germanium Power Devices Germanium Small Signal Transistors Scan PDF
    2N167 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N167 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N167 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N167 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N167 Unknown Vintage Transistor Datasheets Scan PDF
    2N167 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N167 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N167 Unknown GE Transistor Specifications Scan PDF
    2N167 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1670 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1670 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1670 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1670 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1670 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1671 Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original PDF
    2N1671 Advanced Semiconductor UNIJUNCTION TRANSISTOR Scan PDF
    2N1671 Central Semiconductor Unijunction Transistors in a TO-5 Case Scan PDF
    2N1671 Central Semiconductor UNIJUNCTION TRANSISTORS / PROGRAMMABLE UNIJUNCTION TRANSISTORS Scan PDF
    2N1671 General Electric Semiconductor Data Book 1971 Scan PDF
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    2N167 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1678 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


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    PDF 2N1678 Freq25MÂ

    2N2160

    Abstract: No abstract text available
    Text: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N1671, 2N1671A, 2N1671B, 2N2160 P-N GROWN SILICON UNIJUNCTION TRANSISTOR mechanical data The transistors are hermetically sealed in a welded package with glass-to-metal seal between case and


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    PDF 2N1671, 2N1671A, 2N1671B, 2N2160 140CC 2N2160

    2N1671B

    Abstract: No abstract text available
    Text: 2N1671B UNIJUNCTION TRANSISTOR 26.87 Thyristors Unijunction Transistors PN . Page 1 of 1 Enter Your Part # Home Part Number: 2N1671B Online Store 2N1671B Diodes UNIJUNCTION TRANSISTOR Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1671B 2N1671B com/2n1671b

    2N1671

    Abstract: 2N1671A 2N1671B EQUIVALENT 2N1671 rbbo
    Text: 2N16712N1671A2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS They are designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except • • • • Highly Stable Negative Resistance and Firing Voltage


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    PDF 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B EQUIVALENT 2N1671 rbbo

    MPS9680

    Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


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    PDF 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 MPS9680 transistor 2N4258 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020

    transistor 2N4891

    Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420


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    PDF 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2417 2N2417A 2N2417B 2N2418 transistor 2N4891 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494

    Untitled

    Abstract: No abstract text available
    Text: 2N1673 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1673

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N1671A - C UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Base 1 – emitter reverse voltage VB1E 30 V Base 2 – emitter reverse voltage VB2E 30 V Interbase voltage VB1B2 35 V RMS emitter current IFRMS 50 mA Emitter peak current


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    PDF 2N1671A 2N1671A 2N1671B 2N1671 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: <~>c.mL- Conductor 5P^ocluct*., Una, TELEPHONE: 201 378-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1671B Silicon Unijunction Transistors *ALl LEADS INSULATED FROM CASE. •otmwt .Ml (> U-*| MM. C NOTES A. This zone is controlled for automatic handling. The variation in


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    PDF 2N1671B

    2N907 PNP

    Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


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    PDF 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 2N907 PNP 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP

    Untitled

    Abstract: No abstract text available
    Text: 2N1679 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)3.6 @I(C) (A) (Test Condition)600m


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    PDF 2N1679 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N167A NPN GERMANIUM TRANSISTOR absolute .maximum ratings: (25°C) Voltage! Collector to Base Collector to Emitter Emitter to Base Vn Vm Vm Current


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    PDF 2N167A

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    2n1671a

    Abstract: unijunction transistor
    Text: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) 30 V 450 mW @ Te = 25 0C


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    PDF 2N1671A 2N1671A unijunction transistor

    Untitled

    Abstract: No abstract text available
    Text: m 2N1671 \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A lc 30 V ce P diss 450 mW @ Tc = 25 °C Tj -65 °C t o +140 °C


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    PDF 2N1671 2N1671

    tr 2n2160

    Abstract: 2N167 2N1471 2n1671a 2n2160 unijunction
    Text: TYPES 2N1671, 2N1671A, 2N1671B. ¿mm P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L S 6 8 3 1 8 9 , O C T O B E R 1 9 6 2 - R E V t S E D M A Y 1 96 8 Designed for Medium-Power Switching/ Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance


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    PDF 2N1671, 2N1671A, 2N1671B. tr 2n2160 2N167 2N1471 2n1671a 2n2160 unijunction

    2N1671

    Abstract: unijunction transistor TRANSISTOR 2n1671
    Text: 2N1671 UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A o m < lc (PULSED) 30 V P diss 450 mW @ Tc = 25 °C Tj -65 °C to +140 °C


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    PDF 2N1671 unijunction transistor TRANSISTOR 2n1671

    2N1671A

    Abstract: unijunction transistor
    Text: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A lc (PULSED) V ce 30 V P diss 450 mW @ Tc = 25 °C


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    PDF 2N1671A 100i2 unijunction transistor

    unijunction transistor

    Abstract: 2N1671B B2B1 transistor t18
    Text: 2N1671B UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671B is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A o m < lc Pd is s (PULSED) 30 V 450 mW @ Tc = 25 °C Tj


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    PDF 2N1671B 2N1671B unijunction transistor B2B1 transistor t18

    Untitled

    Abstract: No abstract text available
    Text: m 2N1671B \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: PACKAGE STYLE T-18 MOD The 2N1671B is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS 2.0 A lc V (PULSED) 30 V ce P diss 450 mW @ Tc = 25 °C


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    PDF 2N1671B 2N1671B

    2N2160

    Abstract: No abstract text available
    Text: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance


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    PDF 2N2160

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    PDF

    2n1841

    Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


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    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2n1841 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438