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Catalog Datasheet	MFG & Type	Document Tags	PDF
2n2646 Abstract: 2n2647 Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage	Original	2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647	PDF
2N2646 Abstract: SCR 2N2646 2N2646 CIRCUIT 2n2647 High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.	Original	2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol	PDF
2N2646 Abstract: 2N2646 transistor TO-220 2N2646 Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage	Original	2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646	PDF
2N2646 Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr" Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.	Original	2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"	PDF
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage	Original	2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500,	PDF
SK9124 Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871 Text: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E	Original	com/2n491a 2N491A 2N491A SK9124 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871	PDF
2SH25 Abstract: TIS43 2N4891 2N6115 2N3480 2N4891 unijunction 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2647 MOTOROLA mu4894 2SH21 Text: UNIJUNCTION TRANSISTORS Item Number Part Number Manufacturer PD Max W Intrinsic Standoff Ratio Min Max Ip Max (A) Iv Max (A) Interbase Resistance Min (Ohms)Max VB2Bl Max (V) Operating Temperature Min (OC) Max Package Style NP (P-Typ_ Bas_) KT119A KT119B	Original	KT119A KT119B 2N6114 2N6115 2SH21 2N3679 2SH20 2N2417 2N2840 2SH25 TIS43 2N4891 2N3480 2N4891 unijunction 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2647 MOTOROLA mu4894	PDF
TDA3541 Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A Text: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .	Original	TIP115 O-220 79L09AC, SS9012D TIP126 79L12AC, SS9012E TIP41C TDA3541 tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A	PDF
transistor motorola 2n2646 Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646 Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:	OCR Scan	b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646	PDF
GES2646 Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T\|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors	OCR Scan	2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of	PDF
2N2646 Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435 Text: Datasheet central Sem iconductor Corp. 2N2646 2N2647 S IL I C O N UNIJUNCTION TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 18 CASE* Manufacturers of World Class Discrete Semiconductors DESCRIPTION	OCR Scan	2N2646 2N2647 2N2646, 2N2647 100fi 2N2646 Unijunction transistor 2N2646 of 2N2646 Vp rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435	PDF
2n2646 Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418 Text: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A 2N2422B 2N2646	OCR Scan	0D00E37 0000SE3 O-105 O-106 2n2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418	PDF
GES2646 Abstract: 2N2646 Vp GES2647 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646 Text: G E SOLID STATE 3875081 Ôï G E SOLID STATE »T\|3fl7SDÔl 01E GD1 7 tm 17999 fl D T -“ 3 7 - a , / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92	OCR Scan	2N2646, 2N2647, GES2646, GES2647 -4257I GES2646 2N2646 Vp 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646	PDF
2N2646 Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647 Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)	OCR Scan	2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647	PDF

2n2646 2n2647 Abstract: 2N2646 n2646 Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current	OCR Scan	2N2646, 2N2647 2n2646 2n2647 2N2646 n2646	PDF
2N4947 Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264 Text: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51	OCR Scan	IEB20Â 2N2417 2N2417A 2N24178 2N2418 2N2418A 2N2418B 2N241Ã 0U0110A 2N2419B 2N4947 MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264	PDF
2N2646 Abstract: 2N4870 2N4871 AD 277 2N2647 KT132A KT133A KT132B Text: OflHonepexoAHbie ôwnoëÿpHbie TpaH3MCTopû OôoçHaneHèe A ía n o r Pmax 0,3 ÜMeœ.ôaç. max À 35 la èMn. (A ) 2,0 0,3 35 1,5 (B t ) KT132A KT132B KT133A KT133B rn 2N2646 2N2647 2N4870 2N4871 " 3 a â o fl T P A H 3 È C T O P " PecnyôëM Ka B en ap yc b , 2 2 0 0 6 4 ,	OCR Scan	KT132A KT132B 2N2646 2N2647 Case22A-01 KT133A KT133B 2N4870 2N4871 KT-26 AD 277	PDF
2N2646 TO-92 Abstract: transistor 2n4852 transistor 2n4871 2n4871 2N4852 2n2646 package 2N2647 TO-92 2N4853 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 transistor 2N2646 Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST \ _ S u rfa ce M o u n t D evices v* ceo suit (Volts) M in NPN 40 MMBT3904 D evice PIMP MMBT3906 MMBT4401 MMBT4403 fT @l c »c »c Im A I M a x M in M ax mA p NF (dB) (M Hz) M ax M in m A Package r D <A m bi	OCR Scan	MMBT3904 O-236 MMBT3906 MMBT4401 MMBT4403 2N2646 2N4851 2N2646 TO-92 transistor 2n4852 transistor 2n4871 2n4871 2N4852 2n2646 package 2N2647 TO-92 2N4853 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 transistor 2N2646	PDF
UJT 2N2646 Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891 Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can	OCR Scan	2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891	PDF
2N4148 Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147 Text: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.	OCR Scan	2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299 2N2483 2N3002 2N3731 2N4003 2N4148 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2n4146 transistor 2n2706 2N4250 2N4147	PDF
2N4947 Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2160 2n4948 2N2646 ti 2n1671 2N3483 2N602 2n3479 2N3480 Text: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SEMICONDUCTOR bï » E J n f m b a aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth	OCR Scan	CBR12 CBR30 0000S23 O-105 O-106 2N4947 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2160 2n4948 2N2646 ti 2n1671 2N3483 2N602 2n3479 2N3480	PDF
UJT 2N2646 Abstract: 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646 Text: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I SEMICONDUCTOR INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A	OCR Scan	0D00S37 IEB20 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A UJT 2N2646 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646	PDF
2N2646 TO-92 Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948 Text: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth	OCR Scan	CBR30 0000S23 O-105 O-106 2N2646 TO-92 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948	PDF
2N5431 Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A Text: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth	OCR Scan	CBR10 CBR25Ser/es CBR12 CBR30 O-105 O-106 2N5431 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A	PDF

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transistor motorola 2n2646

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