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    2N269 Search Results

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    2N269 Price and Stock

    Kyocera AVX Components LP0402N2690ANTR

    RF FILTER LOW PASS 2.69GHZ 0402
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    DigiKey LP0402N2690ANTR Reel 1,000
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    Avnet Americas LP0402N2690ANTR Reel 14 Weeks 5,000
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    Mouser Electronics LP0402N2690ANTR
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    Samsung Semiconductor 2N2696

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    Bristol Electronics 2N2696 8 1
    • 1 $10.5
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    Quest Components 2N2696 6
    • 1 $14
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    National Semiconductor Corporation 2N2696 NS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N2696 NS 1,984
    • 1 $0.009
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    Molex 0191270011

    Terminals FLANGED SPADE AVIKRIMP
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    TTI 0191270011 Reel 12,000 1,500
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    Vishay Intertechnologies MCS04020D2213BE100

    Thin Film Resistors - SMD .016W 221Kohms 0.1% 0402 25ppm
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    TTI MCS04020D2213BE100 Reel 2,000 1,000
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    2N269 Datasheets (151)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N269 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N269 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N269 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N269 Unknown Vintage Transistor Datasheets Scan PDF
    2N269 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N269 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N269 Unknown GE Transistor Specifications Scan PDF
    2N269 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N269 RCA RCA Transistor and Diode Data Scan PDF
    2N2690 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2690 Motorola The European Selection Data Book 1976 Scan PDF
    2N2690 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N2690 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2690 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N2690 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N2690 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2690 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2690 Unknown GE Transistor Specifications Scan PDF
    2N2690 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N2690 Unknown Cross Reference Datasheet Scan PDF
    ...

    2N269 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


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    PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924

    bfw34 diode

    Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34

    2SB641 r

    Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


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    PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524

    Untitled

    Abstract: No abstract text available
    Text: 2N2696CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N2696CSM 1/50m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF 2N2696 O206AA) 1/50m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2696 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2696 Freq100M

    2N2696

    Abstract: 1455
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF 2N2696 O206AA) 1/50m 2-Aug-02 2N2696 1455

    2N2696CSM

    Abstract: No abstract text available
    Text: 2N2696CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N2696CSM 1/50m 2-Aug-02 2N2696CSM

    2N2696

    Abstract: No abstract text available
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF 2N2696 O206AA) 1/50m 19-Jun-02 2N2696

    Untitled

    Abstract: No abstract text available
    Text: 2N2697 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2697 Freq20M time80n

    Untitled

    Abstract: No abstract text available
    Text: 2N2698 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2698 Freq20M time80n

    Untitled

    Abstract: No abstract text available
    Text: 2N2692 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2692 Freq66

    Untitled

    Abstract: No abstract text available
    Text: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A


    OCR Scan
    PDF 2N869 2N995 2N2696 BCY79-9 BCY79-10 BFX37 CF103

    2N2696

    Abstract: 2N2894 2N2906 2N2906A 2N2907 2N2907A 2N3250 2N3250A 2N3251 2N3496
    Text: 1 TO-18 Metal-Can Package Translate*« PNP Maximum Ratings Type No. 2N2696 2N2894 2N2906 Vcbo (V) Min ^CEO ^EBO (V) Min (V) Min 25 25 12 60 12 40 Pd (W) Tc=25°c 0.36 4 5 0.36 0.4 Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) 'cm (A)


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    PDF 2N2696 2N2894 2N2906 2N3496 2N3497 2N869 2N995 BC177 2N2906A 2N2907 2N2907A 2N3250 2N3250A 2N3251

    Untitled

    Abstract: No abstract text available
    Text: : 8368602 SOLITRON¡ DEVICES INC^Ì DF|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


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    PDF bfltl02 0DD12ti 6079/2N2698 12/26/6DRWN. 6079/2N269B f-23-63-K-44 12/26/62DRWN.

    tca150c

    Abstract: 1j99 SOLITRON
    Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


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    PDF 6079/2N2697 hF68602 DATEL2/26/62 tca150c 1j99 SOLITRON

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    TLO 61

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    2S711

    Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2S711 NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434

    bc156 Transistor"

    Abstract: 2n2272 BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA bc156 Transistor" BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    2N5735

    Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2N5735 bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107