B0935
Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7
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2N389
2N1470
BOT29A
BOT29AF
B0177
2N1079
2N1080
2N3418S
2N2033
B0935
2s0880
je181
to127
2SC1983 Sanken
2S0762
to-53
MJE31A
GS2013 G
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2N2828
Abstract: 2N2829 2N2828 - 2N2829
Text: , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1647 - 2N1650 2N1886 2N2828 - 2N2829 TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C BVceo BVCEO BVEBO A V V V Watts 2N1647 40 80 60 6 3 HFE
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2N1647
2N1650
2N1886
2N2828
2N2829
2N1647
2N1648
2N1649
2N2829
2N2828 - 2N2829
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2SD369A
Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M
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2N4232
2SB761
2SB929
2SB941
2SD1266
2SD856
2SD1761
BDT31A
2SD369A
to-53
2SC1025
MJE2491
KT816V
matsua
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2N2875
Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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MPS5858
BFR50
TIPP31B
ST4341
BSW65
2N1572
2N738
2N2517
2N755
2N2875
2N2836
2n2782
2N2773
2N2869
2n2840 rca
2N2750
2N2768
2N1893 motorola
2N2857 semicoa
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2N5631 JANTX
Abstract: 2n1620 2N2032 2N5634 2N389 2N389A 2N5067 2N5629 2N5630 2N5631
Text: A P I ELECTRONICS INC 00435^2 00002^3 740 * A M C blE D '- 33-/3 POW ER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo Ic V V V A Sat Test Voltages Conditions Ib Iebo VcE V be Ic V V A A ma » hrE MIN MAX Ic A VCE V 2N5067 88
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2N5067
N5068
N5069
2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2N2383
2N5631 JANTX
2n1620
2N2032
2N389
2N389A
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2N1649
Abstract: No abstract text available
Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo V V V h E Ir A @ MAX Ic A V ce M IN V Sat Test Voltages Conditions Ib Iebo Vce V be Ic V A V A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1
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2N5067
2N5068
2N5069
2N5630
2N5631
2N5632
2N5633
2N5634
2N389
2N389A
2N1649
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2N424
Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2
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2N5067
2N5068
N5069
N5629
2N5630
2N5631
2N5632
2N5633
2N5634
TWX-510-224-6582
2N424
2N1722
2N389
to-53
2N389A
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2N1620
Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2
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2N5067
2N5068
N5069
N5629
2N5630
2N5631
2N5632
2N5633
2N5634
TWX-510-224-6582
2N1620
2N1211
2N1886
2N2032
2N5631 JANTX
2N389
2N389A
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Untitled
Abstract: No abstract text available
Text: A P I ELECTRONICS INC 00^3592 A P I St ELECTRONICS d ËT| INC Q0M35T5 0000211 0 Q-~f^33-0 26C 00219 COLLECTOR CURRENT = 2 AMPS PN P TYPES - CONTINUED Device No C ase VCBO Volts AP1090 AP1105 AP1106 AP1107 TO -66 TO -4 6 TO -5 TO -66 125 140 140 140 VCEO sus)
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Q0M35T5
AP1090
AP1105
AP1106
AP1107
2N5786
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2N2753
Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068
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2N389
2N389A
2N424
2N424A
2N1015
2N1015A
2N1015B
2N1015C
2N1015D
2N1015E
2N2753
S1482
JAN2N1480
jantx 2N2771
2N2034
jan2n1482
2N2580M
2n2110
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2n1620
Abstract: 2N5631 JANTX 2n1250 2N389 2N5067 2N5069 2N5629 2N5630 2N5631 2N5632
Text: •f 8365700 SOLID POWER CO RP 95C 00115 SOLID POWER CORP ” Ï5 D D E § fl3bS70D 0GDG11S □ | POWER TRANSISTORS TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C B V cbo B V ceo B V ebo V V V A Watts hrE Sat Voltages C5 MIN MAX Ic A V ce V ce V V be V V Test Conditions
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000G11S
2N5067
N5068
2N5069
2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2n1620
2N5631 JANTX
2n1250
2N389
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2N2828
Abstract: 2N2383 2N1886 2n1250
Text: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1
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2N5067
2N5068
N5069
2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2N389
2N2828
2N2383
2N1886
2n1250
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2N1647
Abstract: No abstract text available
Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages Va V« V V Test Conditions Ib Ic Iebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2 1.0
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2N5067
2N5068
N5069
N5629
2N5630
2N5631
2N2828
2N2829
0435C
TWX-510-224-6582
2N1647
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AP1085
Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
Text: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66
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2N1701
2N5782
AP1029
AP1047
AP1085
AP1089
2N5786
2N2033
2N2034
2N2034A
2N2035
2N2304
2N2828
2N2829
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IN733A
Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano
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2N582
2N5828
2N5828A
2N5829
2N5830
2N5831
2N5832
2N5833
2N6000
2N6004
IN733A
2N551
IN768A
2N146
2N2405
2N339
2n3072
2N244
2N1234
2N1167
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
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BR-BR-0034-58
1n813 fairchild
2N3303
abb inverter manual acs 800
FD6666 diode
2N3137
UA703 equivalent
FD200 diode
2N2369 AVALANCHE PULSE GENERATOR
UA716
Fairchild dtl catalog
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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