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STMicroelectronics 2N2907AHRT Transistor GP BJT PNP 60V 0.6A 3-Pin TO-18 Carrier T/R (Alt: 2N2907AHRT)
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Avnet Silica	2N2907AHRT			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

2N2907AHR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
520200104 Abstract: soc2907 ESCC 5202-001 package LCC-3 Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP bipolar transistor Features Parameter Value BVCEO 60 V IC max 0.6 A 3 1 1 2 2 3 HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	PDF	2N2907AHR 2N2907AHR 520200104 soc2907 ESCC 5202-001 package LCC-3
2N2907AUB Abstract: No abstract text available Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB  ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 2N2907AUB
soc2907 Abstract: 2N2907AUB Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 soc2907 2N2907AUB
SOC2907A Abstract: 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A 2N2907AHR Text: 2N2907AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 2 3 -65°C to +200°C TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified	Original	PDF	2N2907AHR 2N2907AHR SOC2907A 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A
Untitled Abstract: No abstract text available Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382
2N2907AUB Abstract: No abstract text available Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 2N2907AUB
J2N2907A Abstract: JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 J2N2907A JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb
520200107R Abstract: 2N2907A1 2N2907AUB Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.	Original	PDF	2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 520200107R 2N2907A1 2N2907AUB