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    2N3055 TD TRANSISTOR EQUIVALENT Search Results

    2N3055 TD TRANSISTOR EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N3055 TD TRANSISTOR EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


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    TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 PDF

    MJ15015 TRANSISTOR REPLACEMENT GUIDE

    Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051 PDF

    D45H11 equivalent replacement

    Abstract: transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16002* MJE16004*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for


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    MJE16004 MJE16002 MJH16002 Designe32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A D45H11 equivalent replacement transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent PDF

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


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    2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144 PDF

    bdx54c equivalent

    Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


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    BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386 PDF

    MJH11021 equivalent

    Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)


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    MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


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    MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T PDF

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


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    2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 PDF

    mje340 equivalent

    Abstract: 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16010  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    MJ16010 MJ16012 MJW16012 MJW16010 Loa32 TIP73B TIP74 TIP74A TIP74B mje340 equivalent 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor PDF

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


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    TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS PDF

    3904 Transistor

    Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


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    MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint PDF

    transistor K 3596

    Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc


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    MJE700 MJE800 T0220AB, MJE700T MJE800T MJE702 MJE703 MJE802 transistor K 3596 TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100 PDF

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


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    2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT PDF

    2SC1419

    Abstract: BD139 time buv18a MJ2955 replacement 2SC106 ST T4 0570 d41k2 MJ4360 2SA80 2N6021
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16020 MJ16022 Advance Information SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    MJ16022 MJ16020 Inver32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC1419 BD139 time buv18a MJ2955 replacement 2SC106 ST T4 0570 d41k2 MJ4360 2SA80 2N6021 PDF

    TRANSISTOR C 3807

    Abstract: BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* PNP MJF6668* Complementary Power Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6388* MJF6668* 2N6388, 2N6668, TIP102 TIP107 E69369 TIP73B TIP74 TIP74A TRANSISTOR C 3807 BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100 PDF

    2SA1046

    Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


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    2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement PDF

    2SA1046

    Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


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    2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 PDF

    2SC2246

    Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,


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    2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134 PDF

    MJE34 pnp

    Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


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    2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 2N6040 MJE34 pnp 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326 PDF

    MJ802 EQUIVALENT

    Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •


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    MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent PDF

    bd139 3v

    Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V


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    MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad PDF

    application MJ10023

    Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,


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    MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56 PDF

    2n3773 b2

    Abstract: SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16018* MJW16018*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 2n3773 b2 SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent PDF