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Microchip Technology Inc 2N3488 POWER BJT
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Microchip Technology Inc	2N3488			36 Weeks		1 $510.91 10 $510.91 100 $510.91 1000 $510.91 10000 $510.91	Buy Now
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2N3488 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3488	API Electronics	Short form transistor data	Short Form	PDF
2N3488	API Electronics	NPN Transistors	Scan	PDF
2N3488	Diode Transistor	NPN Transistor Selection Guide - TO-111 and TO-61 Packages	Scan	PDF
2N3488	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N3488	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N3488	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3488	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3488	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3488	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3488	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N3488	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N3488	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3488	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3488	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N3488	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3488	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N3488	New England Semiconductor	Low Frequency Silicon Power NPN Transistor, TO-61	Scan	PDF
2N3488	New England Semiconductor	NPN TO-61 Transistor	Scan	PDF
2N3488	PPC Products	Transistor Short Form Data	Scan	PDF
2N3488	Semico	NPN Silicon Power Transistor Selection Guide	Scan	PDF

2N3488 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N3492 Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 Text: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0	Original	PDF	2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
2N3622 Abstract: 2N3445 2N3446 2N3448 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron Text: high-rei power transistors 88 SILICON NPN TRANSISTORS 1 0 Amp BREAKDOWN VOLTAGES VeB VEB VeE TYPE NUMBER CASE SIZE 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N3620 2N3621 2N3622 2N3624 2N3625 2N3626 2N3628 2N3629	Original	PDF	2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3622 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron
Untitled Abstract: No abstract text available Text: 2N3488 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N3488 Freq10M
2N1724 Abstract: 2N3624 Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF\| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case	Original	PDF	DDD01D7 2N1724 2N1725 2N2101 2N2811 2N2812 2N2813 2N2814 2N3445 2N3446 2N3624
2N3480 Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849	Original	PDF	E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712
2N3406 Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391	Original	PDF	HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2N3406 optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
10J2 Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 Text: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A	OCR Scan	PDF	0-300V 2N1724 2N1724A 2N1725 2N6588 2N6589 2N6590 2N6689 2N6690 2N6691 10J2 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
2N1724A Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326 Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE	OCR Scan	PDF	2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N1724A TO61 2N3442 2N1724 2N1725 2N3773 2N3446
2N3017 Abstract: No abstract text available Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984	OCR Scan	PDF	2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017
2N4116 Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309 Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~\| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850	OCR Scan	PDF	fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658
IC 4025 Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple ment VCE (SAT) @ IC/lB	OCR Scan	PDF	0-300V 2N1724 1OQ012O 2N1724A 1OS018O 2N1725 2N2813/ 2N3489 2N3490 2N3491 IC 4025 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
2N5730 Abstract: 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 Text: Il 000012a NPNTO-111 isolated collector (cont’d) ZTB483'52 D IO D E T R A N S I S l U K C O IN C . 8 4 D ~Ô Ô l2 6“ D1QDE TRâ(\)515TQB CQ„ JWC. (201) 666*0400 • Telex; 139-385 • Outslde NY & NJ area cali TOLL FREE 800-526-4581 FAX No. 201-675-5863	OCR Scan	PDF	NPNTO-111 2T548352 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5730 2N5285
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	PDF	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
2N1724 Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489 Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE \|n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15	OCR Scan	PDF	0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	PDF	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
2N3016 Abstract: 2N3017 2N2992 2N3265 2N2991 2N2993 2N2994 2N3018 2N3266 2N3418 Text: C i l # Il PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREEA K D O V V N V OLTAGE S IMPN h F: E SAT . V O L T A GES M ax. CASE V CB V CE V EB V CE (V) 2N2991 TO-5 (s) 95 80 7 5 0.2 25 75 0.2 0.05 3 1 2N2992 TO-5 (s) 155 100 7 5 0.2 25 75 0.2 0.05	OCR Scan	PDF	2N2991 2N2992 2N2993 2N2994 2N3016 2N3017 2N3018 O-61/1 2N3265 2N3266 2N3418
2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	PDF	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan	PDF
2N3919c Abstract: 2N3445 Text: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft	OCR Scan	PDF	2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 O111/1 2N3919c 2N3445
4233A Abstract: 535x 184 324 DIODE 2N5383 2N3055C Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8	OCR Scan	PDF	533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C
a/TO111 Abstract: No abstract text available Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-111 1 f1 TO-59 VCE sat max VOLTS •c @ ' b 2N2877 50 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 2N2878 50 5.0 40-120 1.0/2.0 2.0 5.0/0.5 2N2879 70 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 ’ 2N3996* 80 5.0 40-120 1.0/2.0 0.25 1.0/0.1	OCR Scan	PDF	O-111 2N2877 2N2878 2N2879 2N3996* 2N3997* 2N2880* 2N3998* 2N3999* 2N2812* a/TO111

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2N3488 Search Results

2N3488 Price and Stock

Microchip Technology Inc 2N3488

2N3488 Datasheets (22)

2N3488 Datasheets Context Search

2N3492

2N3622

Untitled

2N1724

2N3480

2N3406

IC HXJ 2038

10J2

2N1724A

2N3017

2N4116

IC 4025

2N5730

1N5438

4116 2n

2N1724

2N4839

2NS604

2N3016

2N5286

JE1100

2N3919c

4233A

a/TO111