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    2N3565 NPN TRANSISTOR Search Results

    2N3565 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3565 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3565

    Abstract: No abstract text available
    Text: na. TELEPHONE: 973 378-2023 (212) 227-8008 FAX: (973) 376-8060 20 STERN AVE. SPRINQFIELO, NEW JERSEY 07081 U.3A 2N3565PN3565 NPN LOW LEVEL HIGH GAIN AMPLIFIERS DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . . . 625 mW @ TA - 25°C h FE . 150 -600 @ 1.0mA


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    PDF 2N3565â PN3565 O18-4 O92-1 62staining 100MA 2N3565

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    Abstract: No abstract text available
    Text: 2N3565 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3565 Freq40M

    2N3565

    Abstract: 2N3565 to-106
    Text: 2N3565 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3565 Availability Online Store


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    PDF 2N3565 2N3565 STV3208 LM3909N 2N3565 to-106

    2N4250

    Abstract: 2N3565 IC LM331 2n3565 equivalent transistor CURRENT-TO-FREQUENCY 2N3565 pin pico amp meter lm331 IC LM331 cost of the ic 1N484
    Text: Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range? Absolute accuracy better than 0.1% is likely to be expensive. But a capability for wide dynamic range can be quite inexpensive. Voltage-to-frequency V-to-F converters are becoming


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    PDF an005622 2N4250 2N3565 IC LM331 2n3565 equivalent transistor CURRENT-TO-FREQUENCY 2N3565 pin pico amp meter lm331 IC LM331 cost of the ic 1N484

    2N3565

    Abstract: 2N4250 2n3565 equivalent transistor CURRENT-TO-FREQUENCY lm11c application notes IC LM331 lm331 1N457 National AN240 1N914
    Text: National Semiconductor Application Note 240 Robert A. Pease May 1980 Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range? Absolute accuracy better than 0.1% is likely to be expensive. But a capability for wide dynamic range can be quite inexpensive.


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    PDF AN-240 2N3565 2N4250 2n3565 equivalent transistor CURRENT-TO-FREQUENCY lm11c application notes IC LM331 lm331 1N457 National AN240 1N914

    CURRENT-TO-FREQUENCY

    Abstract: IC LM331 2N3565 2N4250 photoresistors Photoresistor 2N3565 pin lm331 3N190 5622
    Text: National Semiconductor Application Note 240 Robert A Pease May 1980 Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range Absolute accuracy better than 0 1% is likely to be expensive But a capability for wide dynamic range can be quite inexpensive


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    PLL CD4046 application

    Abstract: CD4046 application note CD4046 pll application note PLL cd4046 CD4046 APPLICATION CIRCUIT CD4046 CD4046 applications PIN OUT of CD4046 CMOS PLL LF351 op-amp integrator LF351 m op-amp integrator
    Text: National Semiconductor Application Note 210 Robert Pease April 1979 A phase-locked-loop PLL is a servo system, or, in other words, a feedback loop that operates with frequencies and phases. PLL’s are well known to be quite useful (powerful, in fact) in communications systems, where they can pluck tiny


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    PLL CD4046 application

    Abstract: CD4046 CD4046 pll application note CD4046 application note CD4046 applications PLL cd4046 PLL design przedpelski 2n3565 equivalent transistor Andrzej Przedpelski optimize CD4046 APPLICATION CIRCUIT
    Text: A phase-locked-loop PLL is a servo system, or, in other words, a feedback loop that operates with frequencies and phases. PLL’s are well known to be quite useful (powerful, in fact) in communications systems, where they can pluck tiny signals out of large noises. Here, however, we will discuss a


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    PDF an005618 PLL CD4046 application CD4046 CD4046 pll application note CD4046 application note CD4046 applications PLL cd4046 PLL design przedpelski 2n3565 equivalent transistor Andrzej Przedpelski optimize CD4046 APPLICATION CIRCUIT

    CD4046

    Abstract: CD4046 application note CD4046 APPLICATION CIRCUIT PLL CD4046 application CD4046 applications PLL cd4046 Andrzej Przedpelski optimize 2N3565 CD4046 pll application note CD4046 application
    Text: National Semiconductor Application Note 210 Robert Pease April 1979 A phase-locked-loop PLL is a servo system or in other words a feedback loop that operates with frequencies and phases PLL’s are well known to be quite useful (powerful in fact) in communications systems where they can pluck


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    TP107B

    Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
    Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30


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    PDF 2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp

    2n3565 equivalent transistor

    Abstract: 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585
    Text: HARRIS SEMICOND SECTOR 2N3583-2N3585, 2N4240 SLE D • M302271 □□HD43S T43 H H A S File Number 138 High-Voltage Silicon N-P-N Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ Freedom from second breakdown • Economy types for ac/dc circuits


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    PDF 2N3583-2N3585, 2N4240 M302271 HD43S 2N3583» 2N3584» 2N3585» 2N4240» 2N3584 2N3585. 2n3565 equivalent transistor 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585

    SE4010

    Abstract: SE4002 2N3565 fairchild to-106 SE4023 BC154 2N3565 to-106 2N5138 bc153 BC318A
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V C eq (Cont’d) Item DEVIC E NO. Pola rity NPN PNP 1 BC522E 2 BC113 v CEO V Min 20 hFE @ ic mA hFE Min/Max — @ ic mA NF dB Max @f kHz NF dB Max @f kHz 2.0 3.0


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    PDF BC522E BC113 O-106 BC205 BC205A BC205C BC179 SE4010 SE4002 2N3565 fairchild to-106 SE4023 BC154 2N3565 to-106 2N5138 bc153 BC318A

    2N3565

    Abstract: 2N4140 CIL611 CIL531 CIL622 cil147 2n4275 CIL612 CIL601 CIL602
    Text: TO-106 EPOXY PACKAGE TRANSISTORS NPN Type No. VCB0 (V) Min VCEO (V) Min VEBO (V) Min CIL631 140 120 5.0 CIL621 100 100 CIL622 100 CIL611 !c b o (MA) Max hFE V CB (V) Min Max 0.10 100 20 5.0 0.50 80 40 100 5.0 0.50 80 80 80 5.0 0.50 CIL612 80 80 5.0 CIL613


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    PDF O-106 CIL631 CIL621 CIL622 CIL611 CIL612 CIL769 2N4274 CIL476 CIL731 2N3565 2N4140 CIL531 cil147 2n4275 CIL601 CIL602

    CIL612

    Abstract: CIL622 CIL532 CIL-531 CIL601 CIL602 CIL611 CIL613 2N4141 CIL631
    Text: TO-106 EPOXY PACKAGE TRANSISTORS NPN Type V CBO No. V CEO V EBO !c b o VCB « hFE (V) (V) (V) (MA) (V) Min Min Min Max Min Max CIL631 140 120 5.0 0.10 100 20 CIL621 100 100 5.0 0.50 80 40 CIL622 100 100 5.0 0.50 80 CIL611 80 80 5.0 0.50 CIL612 80 80 5.0


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    PDF O-106 CIL631 CIL621 CIL622 CIL611 CIL612 CIL613 2N4275 CIL769 2N4274 CIL532 CIL-531 CIL601 CIL602 2N4141

    2N5133

    Abstract: 2N3565
    Text: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246


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    PDF

    2N3564

    Abstract: 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417
    Text: TO-92 B-H T < 3 2 1 DIM MIN MAX A 4,32 5,33 B 4,45 1 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ - - A iM r o V3 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2


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    PDF O-92-1 O-92-2 O-92-3 O-92-4 2N3564 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417

    2N3565

    Abstract: 2N3606 2n2714 transistor 2N3605 2N3564 2N2712 2N360 transistor 2N3565 transistor 2n2712 2N3565 NPN Transistor
    Text: TO-92 DIM MIN MAX A 4,32 5,33 T B 4,45 1 5,20 C 3,18 4,19 < D 0,41 0,55 E 0,35 0,50 B -H 3 2 1 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ — 'A iM f V3 o 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2


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    PDF O-92-1 O-92-2 O-92-3 O-92-4 2N3565 2N3606 2n2714 transistor 2N3605 2N3564 2N2712 2N360 transistor 2N3565 transistor 2n2712 2N3565 NPN Transistor

    rca 2N4240

    Abstract: 2N4240 2N35A RCA-2N3583 17160 rca 2n3565 2N3584
    Text: ïïï DE J| 3 0 7 S D a i 3875081 G E SO LID STATE High-Voltage ra w er iransreiore 001715A b 01E 17158 _ D 2N3583-2N3585, 2N4240 File Number 138 High-Voltage Silicon N-P-N Transistors For H igh-Speed Switching and Linear-Amplifier Applications Features:


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    PDF 01715A 2N3583-2N3585, 2N4240 RCA-2N3583* 2N3584» 2N3585» 2N4240» 2N3584, 2N3584 2N3585. rca 2N4240 2N4240 2N35A RCA-2N3583 17160 rca 2n3565

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


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    PDF SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271

    2N2692

    Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563
    Text: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905


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    PDF 2N37B9 2N3713 2N3790 2N3714 2N3791 2N3715 2N6589 2N6590 2N6689 2N6690 2N2692 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680