2N3635 MOTOROLA
Abstract: 2N3635 2N3637 2N3634 MOTOROLA
Text: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175
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2N3635/D
2N3635
2N3637
2N3635/D*
2N3635 MOTOROLA
2N3635
2N3637
2N3634 MOTOROLA
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2N3634 MOTOROLA
Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn
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Orderth18
2N3634JTX,
2N3635JTX,
2N3636JTX,
2N3637JTX,
CHARACTERlST19
2N3634,
2N3635
2N3636,
2N3637
2N3634 MOTOROLA
m21 transistor
2N3634
2N3637
transistor m21
MIL-19500
2N3634JTX
2N3635
2N3635JTX
2N3636
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2N3633
Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5
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25M SOT89
Abstract: ST5415
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5
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O-37var
O-220
O-220AB
25M SOT89
ST5415
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2N3053 equivalent
Abstract: list of n channel power mosfet barcode reader circuit 5490 motorola MICROSEMI 2N2222A transistor motorola 2n3053 2n5179 equivalent rfid passive tag architecture and standards equivalent 2N2907A 2N2102* motorola
Text: Winter 2000 NOW Products Protecting Transient Protection Product Guide Microsemi has developed a program to communicate its more popular transient suppression products to our customers on a more frequent basis. Starting in late 1999 Microsemi started shipping a quarterly Transient
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LX5241/42/43
2N3053 equivalent
list of n channel power mosfet
barcode reader circuit
5490 motorola
MICROSEMI 2N2222A
transistor motorola 2n3053
2n5179 equivalent
rfid passive tag architecture and standards
equivalent 2N2907A
2N2102* motorola
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2N3609
Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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RN5816
RN5B16
RN5818
HSE125
HSE210
HSE171
2Nl051
2N2480
2N2479
2N3609
2N3633
2N3520
2N3618 motorola
2SC1330
transitron
2N3543
KT503A
LOW-POWER SILICON NPN
2N3625
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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2SB641 r
Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30
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2N1221
2S3030
BCZ10
2S302
HA9048
TP3S38
2N923
BCY28
2SB641 r
2SB641
2N3633
2N3608
2N3588
BC381
2N3642
3SM diode
LOW-POWER SILICON PNP
2N3524
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N3634 MOTOROLA
Abstract: 2N3636 2N3635 MOTOROLA 2N3634 2N3637
Text: 2N3634 thru 2N3637 M AXIM U M RATINGS Symbol 2N3634 2N363S 2N3636 2N3637 U n it C o lle c to r-E m itte r V o lta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a se V olta g e v EBO Rating - 5 .0 1.0 A de
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2N3634
2N363S
2N3636
2N3637
2N3637
O-205AD)
2N3634 MOTOROLA
2N3635 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s
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2N3634
2N3635
2N3636
2N3637
O-205AD)
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TO205AD
Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
Text: 4bE J> m b3b?254 OOlEbfil 0 •flOTb T-91-60 MOTOROLA SC XSTRS/R F Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver
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T-91-60
2N914
2N708
2N2369A
2N3227
2N3735
2N3506
2N3507
2N3737
O-206AC
TO205AD
2N4033
MOTOROLA TO205AD
to-205ad
2N3635 MOTOROLA
2N3440 MOTOROLA
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2N3637 MOTOROLA
Abstract: SILICON SMALL-SIGNAL DICE 2N3635 DIE 2N3634-2N3635 2N3634 MOTOROLA
Text: SC motorola -CDIODES/OPTOî 6367255 . M O TO RO LA . . SC 34 ] > F | b 3 b 7 a S S 00 37^ fla < D I O D E S /O P T O 34C 3 7 -9 8 8 . SILICÔN SMALL-SIGNAL TRANSISTOR DICE continued) 2C3635 DIE NO. — PNP LINE SOURCE — DSL454 This die provides performance similar to that of the following device types:
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DSL454
2N3634
2N3635
2N3636
2N3637
2N4929
2C3635
2N3637 MOTOROLA
SILICON SMALL-SIGNAL DICE
2N3635 DIE
2N3634-2N3635
2N3634 MOTOROLA
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2N5416 MOTOROLA
Abstract: BSW68A 2N4236 MOTOROLA MM3007 2N3501 MOTOROLA BSS74 MOTOROLA MM4003 2N3114 IR M-5005 2N3495
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
2N5415*
2N3637#
MM4001
2N5416 MOTOROLA
2N4236 MOTOROLA
MM3007
2N3501 MOTOROLA
BSS74 MOTOROLA
MM4003
IR M-5005
2N3495
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2N5416 MOTOROLA
Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
2N5229
2N1613
2N2369
2N5416 MOTOROLA
CV8616
2N3501 MOTOROLA
2N5415 MOTOROLA
2N5681 motorola
2N2368
2N4033
2N5231
2N4236 MOTOROLA
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2N3819 MOTOROLA
Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Text: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup
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b3b7S54
MIL-STD-19500.
O-205AD
O-213AA
2N6603
2N6604
2N2857"
2N4957
2N5109
2N3819 MOTOROLA
2N3792 MOTOROLA
motorola 2N3819
2n3819 replacement
2N3375 JAN
2N5339 JANS
2N3741 MOTOROLA
2N2484 motorola
TO206AB
2N3715 MOTOROLA
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motorola 2N2270
Abstract: 2N5861 MOTOROLA
Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
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2N656
2N657
2N697
2N706
2N708
2N718
2N718A
2N869A
2N914
2N916
motorola 2N2270
2N5861 MOTOROLA
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BSW68A
Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
BSV16
BC161
2N2904A#
2N4033
2N5680
transistor 2N4033
2N3501
2N4237
2N4239
2N5681
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2N2369At
Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
i2N5415*
2N3637#
MM4001
2N3635
2N3634#
2N3495
2N5680
MM4000
MM5007
2N2369At
2N4237
High-Voltage Amplifiers
2N3546
2N4033
2N5679 MOTOROLA
2n5680 motorola
2N3114
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2N3303
Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de
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MIL-19500
2N3303
MM8520
2n6431
2n3736
MM420
2n3712
2N4209
2N3252 MOTOROLA
2n914 jantx
2n3506 jan
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MM4003
Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
BSV16
BC161
2N2904A#
2N2905AI
BC160
2N29O40
2N2905#
2N2605#
2N3486
MM4003
2N4033
2N2905
BC177
2N3495
2N5680
transistor 2N4033
2N3227
2N3506
2N3725
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