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    2N3819 DATA Search Results

    2N3819 DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

    2N3819 DATA Datasheets Context Search

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    transistor 2N3819

    Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


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    2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier PDF

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


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    2N3819 450MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor


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    2N3819 450MHz, PDF

    2n3819

    Abstract: 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819
    Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10


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    2N3819 r14525 2N3819/D 2n3819 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819 PDF

    2N3819

    Abstract: N CHANNEL JFET 2N3819 2N3819 data 2n 3819
    Text: 2N3819 JFET VHF/UHF Amplifier N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate −Source Voltage VGS 25 Vdc ID 100 mAdc IG f 10 mAdc 350 2.8 mW mW/°C


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    2N3819 2N3819 2N3819/D0° N CHANNEL JFET 2N3819 2N3819 data 2n 3819 PDF

    2N3819

    Abstract: 2N3819 Application Note N CHANNEL JFET 2N3819
    Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10 mAdc Total Device Dissipation


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    2N3819 r14525 2N3819/D 2N3819 2N3819 Application Note N CHANNEL JFET 2N3819 PDF

    2N3819 equivalent

    Abstract: 2N3819 2N4416 Siliconix
    Text: 2N3819 Siliconix NĆChannel JFETs Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v -8 -25 2 2 Features Benefits Applications D Excellent HighĆFrequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


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    2N3819 2N3819 P-37407--Rev. 2N3819 equivalent 2N4416 Siliconix PDF

    2N3819 equivalent

    Abstract: 2N3819 Jfet 70238 equivalent for 2N3819 2n4416 jfet Siliconix JFET transistor 2N3819 high transconductance JFET TO72 package n-channel jfet 2N3819 application
    Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


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    2N3819 2N3819 04028--Rev. 04-Jun-01 2N3819 equivalent Jfet 70238 equivalent for 2N3819 2n4416 jfet Siliconix JFET transistor 2N3819 high transconductance JFET TO72 package n-channel jfet 2N3819 application PDF

    Untitled

    Abstract: No abstract text available
    Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low


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    2N3819 450MHz, 86MAX PDF

    2N3819 equivalent

    Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix
    Text: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


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    2N3819 2N3819 S-52424--Rev. 14-Apr-97 2N3819 equivalent TEMIC 2N3819 transistor 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix PDF

    2N3819 equivalent

    Abstract: transistor 2N3819 2N3819
    Text: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation


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    2N3819 2N3819 S-52424--Rev. 14-Apr-97 2N3819 equivalent transistor 2N3819 PDF

    2N3819 equivalent

    Abstract: equivalent for 2N3819 2n3819
    Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


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    2N3819 2N3819 08-Apr-05 2N3819 equivalent equivalent for 2N3819 PDF

    2N3819 equivalent

    Abstract: 2N3819 Application Note 2N3819 application 2N3819 Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819
    Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion


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    2N3819 2N3819 18-Jul-08 2N3819 equivalent 2N3819 Application Note 2N3819 application Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819 PDF

    306-803

    Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor
    Text: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


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    20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor PDF

    306-803

    Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741
    Text: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


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    20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741 PDF

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


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    2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet PDF

    2N3819 equivalent

    Abstract: 2n3819 equivalent for 2N3819 jedec package TO-226AA
    Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY Vgs<o«> V < V{brjgss Min (V) g1#Min (mS) -2 5 2 lo s s Min (mA) 2 FEATURES BENEFITS APPLICATIONS • Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz • Very Low Noise: 3 dB @ 400 MHz • Very Low Distortion


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    2N3819 2N3819 04-Jun-01 2N3819 equivalent equivalent for 2N3819 jedec package TO-226AA PDF

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


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    2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819 PDF

    National 2N3819

    Abstract: 2N5248
    Text: Discrete POWER & Signal Technologies National Semiconductorm N-Channel JFETs RF, VHF, UHF Amplifiers B V GSS Device No. C ase Style 2N3819 2N5245 2N5246 2N5247 2N5248 TO-92 TO-92 TO-92 TO-92 TO-92 25 30 30 30 30 1 1 1 1 1 2N5484 2N548S 2N5486 2N5949 2N5950


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    2N3819 equivalent

    Abstract: 2N3819 equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819
    Text: Tem ic Silicon!» _ 2N3819 N-Channel JFETs Product Summary V BR GSS M in (V) < -8 -2 5 l o s s M in (mA) .J:, gfs M in (m S) 2 2 Features Benefits Applications • • W ideband H igh G ain • H ig h -F req u en cy A m plifier/M ixer


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    2N3819 2N3819 P-37407--Rev. 2N3819 equivalent equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819 PDF

    2N3819 equivalent

    Abstract: 2N4223-24 2N5045 2N5045-7 dual jfet vhf 2N3819 2N3819 data 2N3821-4 2N3921-2 2N4084-5
    Text: designed fo r . B Siliconix . Perform ance Curves M IL See Section 5 • General Purpose Amplifiers ■ Analog Switching 2N3819 n-channel JFET BEN EFITS • Low Cost • Specified at 100 M Hz • Automatic Insertion Package •A B S O L U T E M A X IM U M R A TIN G S 25°C


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    TEMIC 2N3819

    Abstract: 2N3819 equivalent 2n3819 equivalent ic 2n3819
    Text: Temic 2N3819 S e m i c o n d u c t o r s N-Channel JFET Product Summary V cS off ( V ) V (B R )G S S M i n (V ) < -8 gfs Min (mS) IDSS Min(mA) 2 -25 2 Features Benefits Applications • Excellent High-Frequency Gain: Gps It dB @ 400 MHz • Very Low Noise: 3 dB @ 400 M Hz


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    2N3819 2N3819 S-52424-- 14-Apr-97 TEMIC 2N3819 2N3819 equivalent 2n3819 equivalent ic PDF

    2N3819 equivalent

    Abstract: MPF111 2N3821-4 2N5457-9 MPF109 2N5556-58 2N4220-2 2N4223-24 2N3819 U401-6
    Text: Siliconix . Perform ance Curves NRL See Section 5 2N5458 designed fo r • General Purpose Amplifiers ■ Switches • 2N5457 2N 5459 s n-channel JFETs •A B S O L U TE M A X IM U M R A TIN G S 25°C TO -92 See Section 7 BEN EFITS Low Cost • Automated Insertion Package


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