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    2N4249 TRANSISTOR Search Results

    2N4249 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4249 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4249

    Abstract: No abstract text available
    Text: 2N4249 Silicon PNP Transistors Designed For Low Level - Low Nosie . 1 of 1 Home Part Number: 2N4249 Online Store 2N4249 Diodes Silic o n PNP Trans ist o rs Des igned F o r Lo w Lev el - Lo w No s ie


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    2N4249 com/2n4249 2N4249 PDF

    transistor 2N4248

    Abstract: 2N4248 2n4249
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage


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    2N4248 2N4249 2N4250 2N4250A O-106 VCB-40V 2N4250A 100yA transistor 2N4248 2N4248 2n4249 PDF

    transistor 2N4248

    Abstract: 2N4250 2N4248 2n4249
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Col lector-Emitter Voltage Collector-Emftter Voltage


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    2N4248 2N4249 2N4250 2N4250A O-106 20MHz 100KQ transistor 2N4248 2N4250 2N4248 2n4249 PDF

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


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    2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 PDF

    bc204

    Abstract: 2N4248 2N4249 BC205 2N4250 BC204A BC204b fairchild semiconductors BC205A BC206b
    Text: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors P N P Low Level, Low Noise Amplifier Transistors Plastic Package TOIOC, T 092 REFERENCE T A BLE Max Ratings Cod« BC204 BC204A BC204B BC205 BC205A BC205B BC206A BC206B BC206C BC320


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    BC204 35349H BC204A 35350X BC204B 35351R BC205 80/typ) 35352G BC205A 2N4248 2N4249 2N4250 fairchild semiconductors BC206b PDF

    2N4288

    Abstract: 2N4249 2N4059 2N4289 2N4291 2N4971 2N3702 2N3703 2N3905 2N3906
    Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. ^cao (V) Min ^CEO ^EBO (V) Min M Min 'c Pd (W) (A) Tc=25°c Max 'cBO m ^CB ®(V) 'c e s m Max ^CE »FE 9 « « Min 'c & (mA)


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    2N3702 O-92-1 2N3703 2N3905 2N3906 2N4291 2N4402 2N4288 2N4249 2N4059 2N4289 2N4971 PDF

    2n4249

    Abstract: 2N4965 se7055 2N4250 2N244 2N4248 SE706 2N2443 2n4250 TO-106 2n3742
    Text: TR A N SISTO RS—SMALL SIGNAL PNP LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VC EO PLASTIC PACKAGE TYPE VOLTS hpE MIN M IN -M A X NF hpE hFE v CEO h FE *C @ •c MIN - MAX mA mA dB @ MAX NF f dB kHz MAX f @ PACKAGE kHz MPS6523 25 150 @0.10


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    MPS6523 MPS6522 2N5138 2N4965 2N4964 2N4250 2N4248 2N5087 2N5086 EN3962 2n4249 se7055 2N244 SE706 2N2443 2n4250 TO-106 2n3742 PDF

    SE4021

    Abstract: BC207B 2N4248 2N4249 BC207 pnp BC521 BC207 BC526 BC204 EN3962
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V q eq (Cont’d) DEVIC EN O . Pola rity PNP Item NPN VCEO V Min 1 PN4250 40 a 2N4248 40 3 hFE hFE @ >c mA Mln/Max 250/700 50/- @ ic mA NF dB Max @f kHz NF dB Max


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    PN4250 2N4248 O-106 PN4248 BC207 BC204 BC207A BC204A SE4021 BC207B 2N4249 BC207 pnp BC521 BC526 EN3962 PDF

    2n4917

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =13 D • Ü5DM33Ö OüaBS'iS 3 ■ ALGR S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS 93D 03595 j _ PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    5DM33Ã TP3644 2N3702 2N3703 TP3798 TP3798A TP3799 TP3799A 2N3905 2N3906 2n4917 PDF

    PN4250

    Abstract: MPS-A70
    Text: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25


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    2N2604 2N2605 2N3547 2N3549 2N3550 2N3799 2N5087 2N5227 MPSA70 MPS6523 PN4250 MPS-A70 PDF

    2N4249

    Abstract: 2N4288 2n4058 2N4289 2N4971 2N3702 2N3703 2N3905 2N3906 2N4059
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. CBO CEO ^EBO Pd Min @Tc=25°c (V) (V) (V) Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) ICBO (A) ^CB ^ces ^ ce m @(v) (jA) Max Max h FE @ 6 (V) Min 'c * (mA)


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    2N3702 O-92-1 2N3703 2N3905 2N4964 2N4965 2N4971 2N4249 2N4288 2n4058 2N4289 2N3906 2N4059 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors PNP Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd ^CBO ^CEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°c ^CES ^CE I'Ve @ (V) (PA) @ (V) Min Max Max Max IcBO m lc * (mA)


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    2N3702 O-92-1 2N3703 2N3905 2N4402 2N4403 2N4964 2N4965 2N4971 PDF

    2N4288

    Abstract: 2N4062 2n4289 2N4248 2N4249 2N4250
    Text: «MMJ This PNP Transistors Material /> £ 3 S e m ic a r K J u c lo r Lo w m L e v e l A m P |i,ie r s 2 t-H Copyrighted Type No. Case Style 2N2605 TO-46 By 2N35S0 to -ib VCE(SAT VBE(SAT) VcbO VCEO Ve BO 'CB0 VCB l»FE - lc . VCE (V) (nA)@ “ (V) (V) Min Max (mA) (V)


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    S01130 T-31-01 2N4288 2N4062 2n4289 2N4248 2N4249 2N4250 PDF

    2N4250

    Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
    Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248


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    2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C


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    S13SS0 TP3644 2N3702 2N3703 TP3798 TP3798A TP3799 TP3799A 2N3905 2N3906 PDF

    2N4288

    Abstract: 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3417 2N3564 2N3662
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vceo (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE


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    2N3417 O-92-1 2N3564 2N3605 2N3606 2N36Q7 2N4291 2N4288 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3662 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


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    BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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