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    2N5308 Price and Stock

    Central Semiconductor Corp 2N5308-PBFREE

    TRANS NPN DARL 40V 0.3A TO92-3
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    DigiKey 2N5308-PBFREE Bulk 2,153 1
    • 1 $1.95
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    • 1000 $0.60762
    • 10000 $0.50525
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    onsemi 2N5308

    TRANS NPN DARL 40V 1.2A TO92-3
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    DigiKey 2N5308 Bulk 2,000
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    Avnet Americas 2N5308 Box 2,500
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    Central Semiconductor Corp CP307-2N5308-WN

    TRANS NPN DARL 40V 0.3A DIE
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    Central Semiconductor Corp CP307-2N5308-CT

    TRANS NPN DARL 40V 0.3A DIE
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    DigiKey CP307-2N5308-CT Tray
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    Central Semiconductor Corp CP307V-2N5308-WN

    TRANS NPN DARL 40V 0.3A DIE
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    Find more 2N5308 price and stock on Findchips.com

    2N5308 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5308 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5308 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5308 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5308 Micro Commercial Components TRANS DARLINGTON NPN 40V 1.2A 3TO-92 Original PDF
    2N5308 Central Semiconductor Darlington Bipolar Transistor, NPN, 40V, TO-92, 3-Pin Scan PDF
    2N5308 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N5308 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
    2N5308 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5308 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5308 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. Scan PDF
    2N5308 Micro Electronics NPN DARLINGTON AMPLIFIER Scan PDF
    2N5308 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5308 Micro Electronics Semiconductor Devices Scan PDF
    2N5308 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5308 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5308 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5308 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5308 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5308 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5308 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N5308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5308

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View


    Original     		PDF 2N5308 100mA 200mAdc, 10Vdc, 10MHz) 300us, 2N5308

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A


    Original     		PDF 2N5308

    2N5308

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View B C NPN Darlington


    Original     		PDF 2N5308 100mA 200mAdc, 10Vdc, 10MHz) 300us, 2N5308

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


    Original     		PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64

    2N5308

    Abstract: equivalent mpsa14 MPSA14 2n53
    Text: 2N5308 2N5308 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 equivalent mpsa14 2n53

    2n5308

    Abstract: No abstract text available
    Text: 2N5308 Planar Epitaxial Passivated NPN Silicon Darlington Transistor. . 1 of 1 Home Part Number: 2N5308 Online Store 2N5308 Diodes Planar Epit ax ial Pas s iv at ed NPN Silic o n Darlingto n Trans is t o r.


    Original     		PDF 2N5308 com/2n5308 2N5308

    2N5308

    Abstract: MPSA14
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308

    2N5308

    Abstract: No abstract text available
    Text: 2N5308 2N5308 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


    Original     		PDF 5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106

    2N5308

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N5308 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


    OCR Scan     		PDF 2N5308 PSA14 2N5308

    D40K2

    Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
    Text: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000


    OCR Scan     		PDF 2N7051 T0-92 2N7053 O-226 2N6725 T0-237 D40C7 T0-202 D40K2 D40K2 T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725

    2N5308

    Abstract: 2N5306 631 TO92 transistor 7k
    Text: Datasheet 2IM5306 2N5308 Central NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-92 CASE (ECB) Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF 2im5306 2n5308 to-92 2N5306, 2N5308 2N5306 100nA 631 TO92 transistor 7k

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted


    OCR Scan     		PDF 2N5308 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)


    OCR Scan     		PDF TP918 TP2221 TP2221A TP2222 TP2222A 2N3414 2N3415 2N3416 2N3417 2N3904

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220