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    2N5811 Search Results

    2N5811 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5811 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N5811 Central Semiconductor PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH Scan PDF
    2N5811 Central Semiconductor PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch Scan PDF
    2N5811 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5811 Micro Electronics SILICON AF MEDIUM POWER TRANSISTOR Scan PDF
    2N5811 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5811 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5811 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5811 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5811 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5811 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5811 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5811 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5811 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5811 Semico Medium Power Transistors Scan PDF
    2N5811 Semico Medium Power Amplifiers and Switches Scan PDF
    2N5811 Sprague Semiconductor Data Book 1977 Scan PDF

    2N5811 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    vane air flow sensor

    Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503
    Text: Application Note 27701B* APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


    Original     		27701B* 362-A vane air flow sensor pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503 PDF

    TRIAC 40669

    Abstract: hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor
    Text: Application Note 27701B* HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


    Original     		27701B* 362-A TRIAC 40669 hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor PDF

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924 PDF

    2N5381

    Abstract: 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO CODE (V) VCEO VEBO ICBO @ VCB (nA) (V) (V) *ICES (V) *VCES *ICEV hFE @ VCE @ IC *hFE (1kHZ) TO-92-18R VCE (SAT) @ IC Cob (V) (mA) (V) (mA) 500 fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		O-92-18R 2N4401 2N4402 2N4403 2N5772 2N5810 2N5811 2N5381 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086 PDF

    2SB641 r

    Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524 PDF

    2SC875 E

    Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60


    OCR Scan     		2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A PDF

    2N5815

    Abstract: 2N5816 2N3856 2N5818 2N5819 2N3856A 2N5810 2N5811 2N5812 2N5813
    Text: PNP SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO-18 PACKAGE IhpE; — 2V — 2mA a Type VcE(sat) VcEO 2N5811 60-200 5 2N5813 1 50-500 * @ 10mA Min. @ — iiOOmA — 50m A Max. (V) (V) Pt T a :=:25°C (mW) Ccb @ — 10V 1 MHz T ypical


    OCR Scan     		500mA 2N5811 2N5810 2N5813 2N5812 2N5815 2N5814 2N5817 2N5816 2N5819 2N3856 2N5818 2N3856A 2N5810 2N5812 PDF

    SCR CONTROL BY PUT CIRCUIT

    Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
    Text: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.


    OCR Scan     		2IM5810-6Q17 GES5810-6017 2N6027 2N6028 2N2926 SCR CONTROL BY PUT CIRCUIT ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits PDF

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


    OCR Scan     		2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 PDF

    2N5816

    Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B


    OCR Scan     		2N4953 O-92B 2N4954 2N4969 O-106 2N4970 2N4971 2N5816 2N5815 2N5225 2N5143 2N5447 2N5226 2N5450 2N5818 2N5819 PDF

    2N3638

    Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
    Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150


    OCR Scan     		500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 2N5815 2N3638A HS5810 2N5822 PDF

    2N4121

    Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


    OCR Scan     		DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138 PDF

    2N5381

    Abstract: 2N5383 2N5376 IC cbe 2N4401 2N4402 2N4403 2N4410 2N5769 2N4952
    Text: !J Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE V cB O (V) hFE v CEO V e b O •CBO VCBC (V) (nA) (V) (V) *'CES •TO-92-18R MIN *VCES MIN MIN *ICEV @ VCE @ lc (V) <mA) TO-92-18R V CE(SAT) ® *C c ob (V) <mA) *h ,e (1 kH Z )


    OCR Scan     		O-92-18R O-92-18R 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 AMPL/250 2N5769 2N5381 2N5383 2N5376 IC cbe PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2N5381

    Abstract: 2N5383
    Text: I ! Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE vCBO V e t o * • * (V) (V) m «Ü * VCBC m . . wr ««eg •• c m (n*A) TO-92-18R Cob (mA) *CES TO-92-1W» M i yni MM *6W *r NÉ *off <PF) <MH*} *c rt> TYP MAX MM MAX MAX


    OCR Scan     		O-92-1W» O-92-18R 2N5381 2N5383 PDF

    2N3859

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )


    OCR Scan     		PDF

    2N5819

    Abstract: No abstract text available
    Text: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


    OCR Scan     		2N5810 2N5819 O-92F 2N5810 2N5819 O-92F 2N5811, 2N5810, 2N5814, PDF

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015 PDF

    2N5225

    Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
    Text: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA­ CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE­ MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P


    OCR Scan     		2N5042 2N5220 2N5221 2N5225 2N5226 2N5354 2N5355 2N5356 2N5365 2N5366 2N5815 2N5816 2n5814 2N5822 2N5420 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF