2N5878
Abstract: 2N5877 2N5875 2N5876
Text: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications
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2N5877
2N5878
2N5875
2N5876
2N5877
2N5878
2N5876
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2N5875
Abstract: 2N5876 2N5877 2N5878
Text: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications
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2N5875
2N5876
2N5877
2N5878
2N5875
2N5876
2N5878
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2N5875
Abstract: 2N5876 2N5877 2N5878
Text: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications
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2N5875
2N5876
2N5877
2N5878
2N5875
2N5876
2N5878
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2N5877
Abstract: 2N5878 2N5875 2N5876
Text: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications
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2N5877
2N5878
2N5875
2N5876
2N5877
2N5878
2N5876
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MJ2955
Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789
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2N3055
MJ2955
2N3442
2N3713
2N3789
2N3714
2N3790
2N3715
2N3791
2N3716
MJ2955
2N3442
2N3055
2N3713
2N3714
2N3715
2N3716
2N3771
2N3772
2N3773
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2N5876
Abstract: 2N5875
Text: TYPES 2N587S, 2NS876 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5875, 2N5876 BULLETIN NO. OL-S 7111608, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5877, 2N5878 150 Watts at 25°C Case Temperature
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2N587S,
2NS876
2N5877,
2N5878
2N5875,
2N5876
2N5875
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247
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2N3789
2N3790
2N3791A
2N3792A
2N4398
2N4399A
2N4901
2N4902
2N4903
2N5683A
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l5 transistor PNP
Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247
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2N3789
2N3790
2N3791A
2N3792A
2N4398
2N4399A
2N4901
2N4902
2N4903
2N5683A
l5 transistor PNP
2N6330 PNP TRANSISTOR
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2N5876
Abstract: 2N5875 2N5878 2N5877
Text: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A
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2N5875
2N5877
2N5876
2N5878
2N5877
2N5878
2N5876,
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Untitled
Abstract: No abstract text available
Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.
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2N5875-2N5876
2N5877-2N5878
2N5877
2N5878
2N5875
2N5876
hFE-10
2N5875/6/7/8
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2N5876
Abstract: 2N5878 2N5875 2N5877
Text: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors
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2N5875
2N5876
2N5877
2N5878
2N5875,
200mA
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2n5875 motorola
Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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2N5875,
2N5876
2N5877,
2N5878
2n5875 motorola
2N5878
2N5875
2N5877
2N5875 2N5876
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2N3055 MOTOROLA
Abstract: MJ2953 MJ2950 MJE34 pnp MJ2954 mjE34 2N5983 MJ2951 MJE34 power transistor 2N5876
Text: 34 MOT O RO LA SC -CDIODES/OPTO} 6367255 MOTOROLA SC D ^ | b 3 b ? a S S 0Q37TS3 Q | ~ D IO D E S /O P T O 34C 37953 SILICON POWER TRANSISTOR DICE (continued) 2C6488 PNP ~01 2C6491 / DIE NO. — NPN LINE SOURCE — PL500.E228 NPN ”^ - 3 3 D DIE NO. — PNP
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0Q37TS3
PL500
2C6488
2N3055
2N4347
2N5983
2NS984
2N5985
2N6486
2N6487
2N3055 MOTOROLA
MJ2953
MJ2950
MJE34 pnp
MJ2954
mjE34
MJ2951
MJE34 power transistor
2N5876
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2n5882
Abstract: No abstract text available
Text: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN
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2N3055
2N3442
2N3713
2N3714
2N3715
2N3716
2N3771
2N3772
2N3773
2N4913
2n5882
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Untitled
Abstract: No abstract text available
Text: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60
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2N3789
2N3790
2N3771
2N3772
2N6055
2N6053
2N6056
2N6054
2N6057
2N6050
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2n5872
Abstract: No abstract text available
Text: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840
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0D0GM41
2N5741
2N5742
2N5743
2N5744
2N5745
2N5781
2N5782
2N5783
2N5784
2n5872
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2N5940
Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP
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2N5733
2N5734
2N5737
2N5738
2N5739
2N5740
2N5741
2N5742
2N5743
2N5744
2N5940
2N5928
2N597
2N5867
2NXXXX
2n5870
2N6030
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Untitled
Abstract: No abstract text available
Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50
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A1331A7
000DQ24
2N5861
2N5864
2N5865
2N5867
2N5868
2N5869
2N5870
2N5871
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2N6226
Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
Text: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3
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DDD0231
00Z31
2N6262
2N6350
2N6351
2N6352
2N6353
2N6354
2N6383
2N6384
2N6226
2N6385
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2N6262
Abstract: 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 DDD0231
Text: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3
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DDD0231
00Z31
2N6262
2N6350
2N6351
2N6352
2N6353
2N6354
2N6383
2N6384
2N6385
DDD0231
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40411 transistor
Abstract: transistor 40411 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3771 2N3772
Text: un ic / m PNP •Ty p « * “7 ComplaHMnt V c e x tu t ic Volts) M ax (Mln-Max @ A/¥) 2N1487 2N1488 2N1489 2N1490 2N1702 40 55 40 55 40 6.0 6.0 6.0 6.0 5.0 15-45 @ 1.5/4 15-4501.5/4 25-7501.5/4 25-75 @ 1.5/4 15-60 @ .8/4 2N3442 2N4347 2N6262 140 120
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2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
2N4347
2N6262
002/2N3716
2N4913
40411 transistor
transistor 40411
2N1702
2N3771
2N3772
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transistor 40411
Abstract: 40411 transistor 40411 2N6258 2N5867 2N5872 2N1487 2N1488 2N1489 2N1490
Text: •Typ«* PNP Compta- VCBHMtS 1C mmt Votte) M a x hn ic / m VCC(SAT) @IC/H VK le n ¥« IS/fe PD@ @VCf TC-2S°C T - lu e ’ Ir (M in-M ax ®A /V ) (V@ A/A) (*@ a / v) 3.0 @1.5/.3 3.0 @1.5/3 [email protected]/.1 [email protected]/.1 [email protected]/.08 [email protected]/4 3.5 @1.5/4 2.5 @1.5/4
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Tc-25Â
2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
2N4347
2N3715
2N3791
transistor 40411
40411 transistor
40411
2N6258
2N5867
2N5872
2N1487
2N1488
2N1489
2N1490
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Untitled
Abstract: No abstract text available
Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM
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2N5661
2N5662
2N5663
2N5664
2N5664-SM
2N5665
2N5665-SM
2N5666
2N5666-SM
2N5667
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transistor 40411
Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30
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TC-25Â
2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
2N4347
2N3715
2N3791
transistor 40411
2N5867
2N6258
40411 transistor
2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
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