2N5927
Abstract: No abstract text available
Text: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/440A ER NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 24 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N5927 JANTX AND JANTXV MIL-S-19500/440A(ER), dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to
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MIL-S-19500/440A
2N5927
2N5927
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04029-01TX
Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing
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MIL-S-19500/440
ASME-14
2N5927
037Z3
04029-01TX
04029-01TXV
04029-01TX
QML-19500
2N5927
NPN power switching transistor 32953
power tech 32953
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NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *
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2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
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D0307
Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Text: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory
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MIL-S-19500/440A
MIL-S-19500/440(
2N5927,
MIL-S-19500.
5961-A007)
D0307
marking a007
vqe 24 er
2N5927
marking JTs
US ARMY TRANSISTOR CROSS
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2N5927
Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
Text: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .
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T-33-15
2N5927
JEDECT0-114PKG.
200mA,
100KHZ
H LB 120A
2N5927 JAN
powertech
PT-700
PT-702
pt100 temperature
PT702
JANTX2N5927
114PKG
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2N5927 JAN
Abstract: No abstract text available
Text: BIG IDEAS IN PowerTech big po w er ” • 120 AMPERES JAN T X 2 N 5 9 2 7 P T - 700 P T - "702 SILICON NPN TRANSISTOR FEATURES: V c E s a t . V BE 0.75 V @ 70 A h p ^ . 5 min @ 120 A 1.5 V @ 70 A t j .
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O-114
100KHz
2N5927 JAN
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2N5927
Abstract: powertech 2N5927 JAN
Text: BIG IDEAS IN BIG POWER" • PowerTech 120 AMPERES JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON IMPIM TRANSISTOR FEATURES: v CE sat 0.75 V @70 A V BE' 5 min @1 2 0 A FE ' 2.5 n see 1.5 V@ 70 A 1.2 A @ 100 V ■S/b 6 Joules : S /b’ SAFE OPERATING AREA
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JEDECTO-114
200mA,
100KHZ
100KHZ
2N5927
powertech
2N5927 JAN
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Untitled
Abstract: No abstract text available
Text: "ENGIDEAS IN BIG POWER" • PowerTech 120 A M P E R E S JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON NPN TRANSISTOR FEATURES: U C E isatl . . 0 ,7 5 V . . 70 A t.S V S > 7 0 A bp 5 min @12 0 A
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20CmA.
PT700
2N5927
PT702
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TO63 package
Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3
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2N3265
2N3266
2N3846
2N3847
2N4002
2N4003
2N5539
2N6046
2N6047
2N6048
TO63 package
2N5250
transistor 114
2N3150
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TO63 package
Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3
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2N3265
2N3266
2N3846
2N3847
2N4002
2N4003
2N5539
2N6046
2N6047
2N6048
TO63 package
TRANSISTOR C 2570
TO114 package
2n3150
transistor 2n4866
2N5251
2N5927 JAN
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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