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    2N6262 TRANSISTOR Search Results

    2N6262 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N6262 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6262

    Abstract: 2N6262 datasheet
    Text: SavantIC Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications


    Original     		PDF 2N6262 2N6262 2N6262 datasheet

    2N6262

    Abstract: 2N6262 datasheet 100v audio amplifier 2N6262 Application Notes
    Text: Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications


    Original     		PDF 2N6262 2N6262 2N6262 datasheet 100v audio amplifier 2N6262 Application Notes

    2N3442 RCA

    Abstract: 2N6262 RCA 2n6262 RCA-2N3442 2N3442 2N4347 2SC SERIES TRANSISTORS DG173BL dg173b transistor 2n3442
    Text: ïïï 3875081 G E SOLID DE |3fl7SDfll D0173til 3 STATE 01E 17361 3 ^ -/3 D G eneral-Purpose Power Transistors File Number 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors


    OCR Scan     		PDF DG173bl 2N3442, 2N4347, 2N6262 2N4347) 2N3442) 2N6262J O-204AA RCA-2N3442, 2N3442 RCA 2N6262 RCA 2n6262 RCA-2N3442 2N3442 2N4347 2SC SERIES TRANSISTORS dg173b transistor 2n3442

    2n4347

    Abstract: 2N6262
    Text: 2N4347, 2N6262 2N4347, 6262 NPN POWER TRANSISTORS High Power and High Voltage Applications DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 PIN CONFIGURATION


    OCR Scan     		PDF 2N4347, 2N6262 2n4347 2N6262

    2n6262

    Abstract: 2n3442
    Text: ÏÏÏ 3875081 G E SOLID DE |3fl7S0fll D0173til 3 STATE 01E 17361 7^ 3^-/3 D General-Purpose Power Transistors File N um ber 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors


    OCR Scan     		PDF D0173til 2N3442, 2N4347, 2N6262 oN3442, 2N3442. 2N4347. 2N6262. 2n6262 2n3442

    Untitled

    Abstract: No abstract text available
    Text: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in


    OCR Scan     		PDF 2N3442, 2N4347, 2N6262 2N4347) 2N3442) 2N6262) O-204AA 2N6262

    2n4347

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT M A X IM U M RATINGS <5> Ic 25°C B V cbo B V ceo B V ebo A V V V Watts TYPE NO 117 2N3442 2N4347 2N6262 160 7 140 bFE @ Ic A VCE V 70 3 4 4 1 2 .5 M IN M A X 10 20 Sat Voltages VCE V be V V 100 140 120 7 5 15 70 2 150 170 150 7 10 20


    OCR Scan     		PDF 2N3442 2N4347 2N6262 2N6262

    SDT423

    Abstract: SDT411 SDT425
    Text: 33 SILICON POWER TRANSISTORS CURRIE MT G A IN TYPE NUM BER CASE TYPE V CBO V V EBO V CEO I V I V h M IN . I MAX. V CE V S A T U R A T IO VI V O LT A G E S <s> C I A V CE(s V BE(s) V I V 'c A 1 *B A 10 AMP SILICON NPN 2N5313 2N5315 2N5317 TO-61 TO-61 TO-61-I


    OCR Scan     		PDF

    2N3773 equivalent

    Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
    Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		PDF JAN2N3771, JAN2N3772, 2N3773. 2N4347, 2N4348, 2N6262 C-112 2N3773 equivalent transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent

    2N3773 equivalent

    Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
    Text: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:


    OCR Scan     		PDF 79mnj JAN2N3771. JAN2N3772. 2N3773. 2N4347. 2N4348. 2N6262 C-112 C-113 2N3773 equivalent transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. BVc b o •c (A) MAX (W) 10 2N6249 (V) bvceo h fiE % *TYP (A) VCE(SAT) ®*c "TYP (MHZ) nun (V) MIN MIN MAX 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375 275 8.0 50


    OCR Scan     		PDF 2N6248 2N6249 2N6250 2N6251 2N6253 2N6254 2N6262 2N6283 2N6284 2N6306

    RCS258

    Abstract: RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca bd142
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ {s a t ) —V 'C E X - m A h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 MHz min; P j to 150 W max


    OCR Scan     		PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 RCS258 RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca

    SDT9309

    Abstract: 2N3055 2N3055H SDT9302 SDT9301 2n3442 ic 331
    Text: -JFplitran [p[fiì ®l!D Tr ©ÄTTÄIL® Devices. Inc. SINGLE DIFFUSED NPN MESA TRANSISTORS Ü /MMÏÏ? K M DEVICE TYPE VCEO hpE ( VOLTS MIN/MAX ic (A Vc e (sat) MAX (V) (A) ic Isb PULSE VCE(V) Ic(A ) (sec) ÍT MIN (MHz) PT MAX (W) CASE CHIP TYPE TYPE


    OCR Scan     		PDF 2N3441 2N3054 SDT31303 SDT31305 SDT31307 10/S0 SDT9301 SDT9302 SDT9303 SDT9304 SDT9309 2N3055 2N3055H 2n3442 ic 331

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6262

    Abstract: No abstract text available
    Text: POWER TRANSISTORS Sat Voltages PT m TYPE NO. MAXIMUM RATINGS hfE @ Test Conditions! Ic IB I EBP A A ma Ic A Vet 70 3 4 5 5.7 10 2.0 15 70 2 4 1 2.0 2 .2 20 70 3 2 .5 1.0 3 .3 ~2~ I •VCTTT1 ; iV T T T | ; MIN MAX Watts V V V A 2N3442 117 160 140 7 10 20 2N4347


    OCR Scan     		PDF 2N3442 2N4347 2N6262 TWX-510-224-6582 2N6262

    rca 40411

    Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max


    OCR Scan     		PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 rca 40411 RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 rcs258 rca 40363

    RCA 40313

    Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
    Text: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63

    BDX33C darlington pair

    Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
    Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 BDX33C darlington pair 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    RCA 40250

    Abstract: RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA
    Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40250 RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan     		PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


    OCR Scan     		PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955

    RCA 40313

    Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250