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    2N6278 TO63 Search Results

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    TC40U250

    Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508


    Original     		PDF SML96303 TC40U250 BUR20 2N5685 PT5501 SCA14028 SCA14029 2N5686 GENTRON ES BT082 GENTRON BT081 2SC1442 entron

    TO114

    Abstract: to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279
    Text: VCE Device Type VCEO hFE V Min/Max 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 120 100 80 100 120 140 150 150 200 10/40 25/120 25/150 30/120 30/120 30/120 30/120 10/50 10/50 50.0 20.0 25.0 20.0 20.0 20.0 20.0 50.0 50.0 SDT79823 80


    Original     		PDF 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 SDT79823 TO114 to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279

    semelab 2N6287

    Abstract: 2N6300J 2n6278 to63
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original     		PDF 2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


    Original     		PDF SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Text: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


    OCR Scan     		PDF 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N5968 AP1069 AP1112 to63

    2n6276

    Abstract: 2n6278 2N6281
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 N.Y. 11779 R onkonkom a, NPN POWER TRANSISTORS 2N6274 thru 2N6281 50 AMP SWITCHING GEOMETRY 512 • 250 W. Continuous Power • VCEO sus to150V. TO-63 TO-3 (0 6 0 Lead) - MAXIMUM RATINGS PARAMETER SYMBOL Collector Emitter Voltage


    OCR Scan     		PDF to150V. 2N6274 2N6281 2N6275 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    2N3265

    Abstract: 2N5251 2N5250 2n3599 2N4865 2n4211 2N5250 JANTX t0114 2N6060 2n6278 to63
    Text: A POW ERHOUSE BIPOLAR NPN PLANAR POW ER T R A N S IS T O R S TO-63 T0-114 •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE > PACKAGE VCE seti max VOLTS 'C A A 2N3265 90 20.0 25- 55 15.0/2.0 1.0 2 0 .0 /2.0 2N3266 60 20.0 20- 80 15.0/3.0 1.6


    OCR Scan     		PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N4211 2N6060 2N5251 2N5250 2N4865 2N5250 JANTX t0114 2n6278 to63

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl


    OCR Scan     		PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N6060 2N6215

    TO63 package

    Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN

    TO-59 Package

    Abstract: 2n3265 2N4002 2N3597 80240C TO61 package 2N6279 TO63 package 25120
    Text: BIPOLAR MPN POW ER TRANSISTORS PACKAGE TO-1 1 1 PACKAGE TO-59 PACKAGE TO-61 PACKAGE TO-63 DEVICE TYPE BVceo vous 2N2877 2N2878 2H2879 2N3996-* T VCE sät max VOLTS AMPS hFE min/max *C @ VCE A V 50 5.0 20-60 1.0/2.0 2.0 5.0/0.5 50 5.0 40-120 2.0 5.0/0.5 70


    OCR Scan     		PDF 2N2877 2N2878 2H2879 2N3996-* 2N3997" 2M2880* 2N3998* 2M3999" 2N2811 2N2812* TO-59 Package 2n3265 2N4002 2N3597 80240C TO61 package 2N6279 TO63 package 25120

    2n60n

    Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80


    OCR Scan     		PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6060 2N6062 2n60n 2N6235 2N6078 2N6215

    Untitled

    Abstract: No abstract text available
    Text: r le = 30 AMPS DEVICE TYPE VOLTS BV ebo VOLTS P0 @ 100°C WATTS 80 100 150 80 100 80 100 150 80 100 6.0 6.0 6.0 8.0 8.0 TO-63 TO-3 80 80 80 80 TO-3 200 250 PACKAGE BVceo VOLTS 2N4003 TO-63 TO-63 TO-63 TO-63 TO-63 2N5733 2N5734 2N2823 2N2824 2N2825 2N4002 ^XG SR 50020


    OCR Scan     		PDF 2N2823 2N2824 2N2825 2N4002 2N4003 2N5733 2N5734

    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number JAN2N633S JANS2N6338 JANTX2N6338 JANTXV2N6338 JAN2N6339 JANS2N6339 JANTX2N6339 JANTXV2N6339 JAN2N6340 JANS2N6340 JANTX2N6340 JANTXV2N6340 JAN2N6341 JANS2N6341 JANTX2N6341 JANTXV2N6341 2N6686 2N6687 2N5301 2N5302 2N6326


    OCR Scan     		PDF O-120 NPN-21

    2N54115

    Abstract: 2N5286 2N3023
    Text: ^ pF | 613Mb&#39;i3 □□□□155 7 | "T'-<^ 7-Q | NPN SILICON POWER TRANSISTORS Cont’d 8134693 SEMICQA Maximum Ratings Device Dissipation Type No. @25°C ic VCB (Cont.) NPN Volts (Case) Amps Watts 30 120 2N6271 100 30 120 2N6273 100 30 110 2N5933 175 30


    OCR Scan     		PDF 613Mb' 2n6271 2n6273 2n5933 2n5936 2n5930 to-63 sca14066 2n5931 2n6322 2N54115 2N5286 2N3023

    2N5685

    Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


    OCR Scan     		PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    AP1069

    Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


    OCR Scan     		PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 AP1069 AP1112 2N5489

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2


    OCR Scan     		PDF 2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63

    2N6960

    Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
    Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50


    OCR Scan     		PDF 2N6546 2N6547 SDT14411 SDT14412 SDT14413 SDT14414 SDT14415 2N6246 2N6247 O-114 2N6960 TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302