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Cal-Chip Electronics CHV1812N630103KXT HVCAP1812 X7R .01UF 10% 630V
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DigiKey	CHV1812N630103KXT	Reel	77,000		1,000	1 - 10 - 100 - 1000 $0.29 10000 $0.26	Buy Now
Cal-Chip Electronics CHV1812N630223KXT HVCAP1812 X7R .022UF 10% 630V
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DigiKey	CHV1812N630223KXT	Reel	12,500		1,000	1 - 10 - 100 - 1000 $0.26 10000 $0.23	Buy Now
Cal-Chip Electronics CHV1812N630473KXT HVCAP1812 X7R .047UF 10% 630V
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DigiKey	CHV1812N630473KXT	Reel	11,000		1,000	1 - 10 - 100 - 1000 $0.25 10000 $0.22	Buy Now
Cal-Chip Electronics CHV1812N630104KXT HVCAP1812 X7R .1UF 10% 630V
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DigiKey	CHV1812N630104KXT	Reel	9,000		1,000	1 - 10 - 100 - 1000 $0.2 10000 $0.173	Buy Now
Cal-Chip Electronics CHV1812N630333KXT HVCAP1812 X7R .033UF 10% 630V
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DigiKey	CHV1812N630333KXT	Reel	5,000		1,000	1 - 10 - 100 - 1000 $0.275 10000 $0.233	Buy Now

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2N630 Datasheets (261)

Part	Manufacturer	Description	Datasheet Type	PDF
2N630	Germanium Power Devices	Germanium Power Transistors	Scan	PDF
2N630	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N630	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N630	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N630	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N630	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N630	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N630	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N630	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N630	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N630	Semitron	Germanium Power Transistors	Scan	PDF
2N630	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF
2N6300	Microsemi	TRANS DARLINGTON PNP 60V 8A 2TO-213AA - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Original	PDF
2N6300	Motorola	Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Original	PDF

2N6300	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Original	PDF
2N6300	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Scan	PDF
2N6300	Central Semiconductor	BJT, NPN, Power Transistor, IC 8A - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Scan	PDF
2N6300	Mospec	POWER TRANSISTORS(8A, 75W) - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75	Scan	PDF
2N6300	Mospec	Darlington Complementary Silicon Power Transistor	Scan	PDF
2N6300	Motorola	European Master Selection Guide 1986	Scan	PDF

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2N630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6304 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz	Original	PDF	2N6304 2N6304
2N6303 Abstract: No abstract text available Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)	Original	PDF	2N6303 O205AD) 1-Aug-02 2N6303
2n6304 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz	Original	PDF	2N6304 2N6304
2N6300 Abstract: No abstract text available Text: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N6300 O213AA) 1-Aug-02 2N6300
2N6304 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz	Original	PDF	2N6304 MSC1323 2N6304
Untitled Abstract: No abstract text available Text: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS	Original	PDF	2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II
Untitled Abstract: No abstract text available Text: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process	Original	PDF	2N6298 2N6299 2N6300 2N6301 100mA 2N6299, 2N6301) 100kHz
2N6303 Abstract: No abstract text available Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)	Original	PDF	2N6303 MSC1062 2N6303
60N60 Abstract: 2N6300 Text: 2N6300 60 V darlington complementary NPN silicon power transistor 9.00 Transistors D. Page 1 of 2 Enter Your Part # Home Part Number: 2N6300 Online Store 2N6300 Diodes 60 Transistors V darlington complementary NPN silicon transistor Integrated Circuits Optoelectronics	Original	PDF	2N6300 2N6300 com/2n6300 60N60
Untitled Abstract: No abstract text available Text: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6306 O204AA) 18-Jun-02
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6308 Features • • • NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability	Original	PDF	2N6308 300Vdc,
Untitled Abstract: No abstract text available Text: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N6300 O213AA) 30-Jul-02
2n6300 Abstract: No abstract text available Text: NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage	Original	PDF	2N6300 2N6301 MIL-PRF-19500/539 O-213AA) 2N6300
2N6301 applications Abstract: TO-213AA 1000C 2N6300 2N6301 Text: TECHNICAL DATA 2N6300 JTX, JTXV 2N6301 JTX, JTXV Processed per MIL-PRF-19500/539 NPN DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C 1	Original	PDF	2N6300 2N6301 MIL-PRF-19500/539 2N6300 2N6301 1000C O-213AA) 2N6301 applications TO-213AA 1000C

2N6302 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage	Original	PDF	2N6302 16oltage 2N6302
2N2880 Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749 Text: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B	Original	PDF	2N2658 2N2814 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N2880 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
2N6304 Abstract: No abstract text available Text: LE.I\E,UtJ tSe.ml-Condiicto'i ^Pioduct*., One. Cf TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise	Original	PDF	2N6304 2N6304
2N6301 Abstract: No abstract text available Text: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation.	Original	PDF	2N6300 2N6301 MIL-PRF-19500/539 O-213AA O-213AA T4-LDS-0171, 2N6301
2N6298 Abstract: 2N6299 2N6300 2N6301 Text: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )	OCR Scan	PDF	2N6298, 2N6299 2N6300, 2N6301 2N6300 2N6299, 2N6301 2N6300 2N6298
2NG307 Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655 Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass	OCR Scan	PDF	2N6306 2N6307 N6308 600nsl 2N6308 2NG307 ns802 2N6308 unitrode 655
2N6306 Abstract: 2n6307 TO-204aa MICROSEMI PACKAGE OUTLINE 2N6308 Text: 61 1 5 9 5 0 MICROSEMI CORP/POWER DB DE j b l l S i S O 02E~W£12 OODOms D a \|~ 2N6306 2N6307 2N6308 TECHN O LO G Y Power Technology Components HIGH VOLTAGE NPN TRANSISTORS 8 AMPERES 700 VOLTS FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 700 Volts	OCR Scan	PDF	2N6306 2N6307 2N6308 2N6306, 2N6308 2N6306 TO-204aa MICROSEMI PACKAGE OUTLINE
2N6307 Motorola Abstract: 2N6308 2N6306 2N6303 2n6308 motorola Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 \| MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching	OCR Scan	PDF	k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola
Untitled Abstract: No abstract text available Text: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.	OCR Scan	PDF	2N6306 2N6306
2n6306 Abstract: 2N6307 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a Text: Datasheet 2N6306 2N6307 2N6308 Central Sem iconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 Case Manufacturers of World Class Discrete Semiconductors DESCRIPTION	OCR Scan	PDF	2N6306 2N6307 2N6308 2N6306, 2N6307, 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a

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Cal-Chip Electronics CHV1812N630103KXT

Cal-Chip Electronics CHV1812N630223KXT

Cal-Chip Electronics CHV1812N630473KXT

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Cal-Chip Electronics CHV1812N630333KXT

2N630 Datasheets (261)

2N630 Datasheets Context Search

2N6304

2N6303

2n6304

2N6300

2N6304

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2N6303

60N60

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2n6300

2N6301 applications

2N6302

2N2880

2N6304

2N6301

2N6298

2NG307

2N6306

2N6307 Motorola

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2n6306