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Microchip Technology Inc 2N6339 NPN TRANSISTOR
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Microchip Technology Inc	2N6339			36 Weeks		1 $70.83 10 $70.83 100 $70.83 1000 $70.83 10000 $70.83	Buy Now

Onlinecomponents.com	2N6339					1 - 10 - 100 $64.79 1000 $64.79 10000 $64.79	Buy Now
NAC	2N6339	Tray			4	1 $72.29 10 $72.29 100 $66.58 1000 $61.71 10000 $61.71	Buy Now
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Master Electronics	2N6339					1 - 10 - 100 $64.79 1000 $64.79 10000 $64.79	Buy Now
Solid State Devices Inc (SSDI) 2N6339 To 3 25 Amp Silicon Transistor Rohs Compliant: Yes \|Solid State 2N6339
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Motorola Semiconductor Products 2N6339 TRANSISTOR,BJT,NPN,120V V(BR)CEO,25A I(C),TO-3
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Quest Components	2N6339		80			1 $24 10 $24 100 $20.4 1000 $20.4 10000 $20.4	Buy Now
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	2N6339		21			1 $24 10 $24 100 $22.8 1000 $22.8 10000 $22.8	Buy Now
	2N6339		1			1 $14.56 10 $14.56 100 $14.56 1000 $14.56 10000 $14.56	Buy Now
GTCAP 2N6339 TRANSISTOR,BJT,NPN,120V V(BR)CEO,25A I(C),TO-3
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Quest Components	2N6339		17			1 $24 10 $24 100 $22.8 1000 $22.8 10000 $22.8	Buy Now

2N6339 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6339	On Semiconductor	High-Power NPN Silicon Transistors	Original	PDF
2N6339	On Semiconductor	POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Original	PDF
2N6339	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6339	API Electronics	25 AMPS / 30 AMPS NPN Transistors	Scan	PDF
2N6339	API Electronics	25 Amp Transistors	Scan	PDF
2N6339	Boca Semiconductor	HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6339	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N6339	General Semiconductor	Low Frequency Silicon Power NPN Transistor	Scan	PDF
2N6339	Mospec	POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6339	Mospec	High-Power NPN Silicon Transistor	Scan	PDF
2N6339	Motorola	The European Selection Data Book 1976	Scan	PDF
2N6339	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6339	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6339	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N6339	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6339	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6339	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6339	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6339	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6339	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N6339 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6339 Abstract: 2N6340 2N6338 2N6341 2N6436 Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier	Original	PDF	2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341
2N3265 Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858 Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00	Original	PDF	2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
Untitled Abstract: No abstract text available Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339X O204AA) 16-Jul-02
equivalent to tip162 Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338	Original	PDF	2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
2N6339 Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D
2N6339X Abstract: No abstract text available Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339X O204AA) 31-Jul-02 2N6339X
2N6339ACECC Abstract: No abstract text available Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339ACECC O204AA) 31-Jul-02 2N6339ACECC
Untitled Abstract: No abstract text available Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339ACECC O204AA) 16-Jul-02
Untitled Abstract: No abstract text available Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339X O204AA) 18-Jun-02
NPN Transistor VCEO 80V 100V Abstract: 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed	Original	PDF	2N6338/6339/6340/6341 2N6338 2N6339 2N6340 2N6341 NPN Transistor VCEO 80V 100V 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341
2N6341 Abstract: 2N6338 2N6340 2N6339 2N6436 Text: JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6436~38 APPLICATIONS ・For use in industrial-military power amplifier	Original	PDF	2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6340 2N6339 2N6341
Untitled Abstract: No abstract text available Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6339ACECC O204AA) 18-Jun-02
2N6437 Abstract: 2N6339 2N6341 2N6438 Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

2N5330 Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846
2N2820 Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je\|WsÍ1mD53iT D \| CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63	OCR Scan	PDF	000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340
2N6341 Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor
2N5330 Abstract: No abstract text available Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100	OCR Scan	PDF	2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330
Untitled Abstract: No abstract text available Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771
2N2823 Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340 Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846
2N6339 Abstract: 2N6338 2N6340 2N6341 Text: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)
2N5437 Abstract: 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 Text: - "í . 00^3592 A P I A P I ELECTRONICS INC ~ ELECTRONICS INC 117= 26C 00236 2b .33-01 ¡>E^aOM3Sia [1000331. O . COIiLECTOR CURRENT = 2 5 AMPS NPN TŸPES D evice No C ase VCBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341	OCR Scan	PDF	2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N5437
Untitled Abstract: No abstract text available Text: e l e c t r o n i c s in c . SECTION 2 COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case VcBO Volts 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 TO -63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 v CEO su s Volte Ve b o Volts 7 7 6 6 6 6 90 60 100	OCR Scan	PDF	2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 2N2823 2N2824 2N2825 2N3771
2N4071 Abstract: 2N6277 JANTX 2N6277 2N4070 Text: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120	OCR Scan	PDF	T0-204 2N4070 2N4071 2N5622 2N5624 2N5626 2N5628 2N6274* 2N6275 2N6276 2N6277 JANTX 2N6277

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2N6339 Search Results

2N6339 Price and Stock

Microchip Technology Inc 2N6339

Solid State Devices Inc (SSDI) 2N6339

Motorola Semiconductor Products 2N6339

GTCAP 2N6339

2N6339 Datasheets (34)

2N6339 Datasheets Context Search

2N6339

2N3265

Untitled

equivalent to tip162

2N6339

2N6339X

2N6339ACECC

Untitled

Untitled

NPN Transistor VCEO 80V 100V

2N6341

Untitled

2N6437

sn76131

2N5330

2N2820

2N6341

2N5330

Untitled

2N2823

2N6339

2N5437

Untitled

2N4071