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    2N6476 CASE Search Results

    2N6476 CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    2N6476 CASE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6476

    Abstract: 2N6475
    Text: Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications


    Original     		2N6475 2N6476 O-220 O-220) 2N6475 -120V 2N6476 PDF

    2N6476

    Abstract: 2N6476 case 2N6475
    Text: SavantIC Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications


    Original     		2N6475 2N6476 O-220 O-220) 2N6475 -120V 2N6476 2N6476 case PDF

    2N6474

    Abstract: No abstract text available
    Text: 2N6473 2N6474 2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed


    Original     		2N6473 2N6474 2N6475 2N6476 2N6473, 2N6475 O-220 2N647C 50kHz 2N6474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 AMP NPN Sorted by IC, then VCEO Ratings based on 25˚C case temperature unless otherwise specified PT max IC max A VCEO max (V) hFE min hFE max @Ic (A) VCE(sat) max (V) @ IC (A) fT min (MHz) 2N5296 4 40 30 120 Note 1 1 Note 1 Note 1 36 TO-257 2N6121 4


    Original     		2N5296 O-257 2N6121 2N5202 2N3766 2N4877 2N5298 2N612 PDF

    2N5494

    Abstract: 2N6134 2N6133 2N6131 2N6476 2N6040 2N6041 2N6042 2N6109 2N6124
    Text: Standard Optional Power Transistors TO-220 Case TO-220 TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 4.0 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 36 60 40 30 4.0 36 80 60 2N5490 7.0 50 60 2N5492 7.0 50 75 2N5494 7.0 50 2N5496


    Original     		O-220 O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 O-220FP 2N5494 2N6134 2N6133 2N6131 2N6476 2N6040 2N6041 2N6042 2N6109 2N6124 PDF

    2N6041

    Abstract: 2N6133 2N6134 2N6040 2N6042 2N6109 2N6111 2N6124 2N6125 2N6126
    Text: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492


    Original     		O-220 O-220 O-220FP 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6041 2N6133 2N6134 2N6040 2N6042 2N6109 2N6111 2N6124 2N6125 2N6126 PDF

    MJE1300

    Abstract: No abstract text available
    Text: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492


    Original     		O-220 O-220 O-220FP 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6132 MJE1300 PDF

    *e13007

    Abstract: MJE13009 D44C11 Data mje13008 MJE800T equivalent bu406d BU407D bu806 equivalent equivalent mje13005 mje13009 equivalent
    Text: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492


    Original     		O-220 O-220 O-220FP 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 *e13007 MJE13009 D44C11 Data mje13008 MJE800T equivalent bu406d BU407D bu806 equivalent equivalent mje13005 mje13009 equivalent PDF

    rca 17417

    Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
    Text: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon


    OCR Scan     		2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* rca 17417 TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743 PDF

    2n6a

    Abstract: 2N6474 2N6476 2N6A73 2N6473 2N6475 2N647A
    Text: ♦I 2N6A73 2N647A NPN 2N6475 2N6476 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC T0-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6473 Series types are complementary silicon power transistors manufactured by the epitaxial base process designed for general purpose amplifier and


    OCR Scan     		2N6A73 2N647A 2N6475 2N6476 T0-220 2N6473 100ii) 100fi 100mA 100mA, 2n6a 2N6474 PDF

    2N8107

    Abstract: rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA
    Text: ÏÏÏ 387 5081 G E SOLID STATE DE |3fl7SQfll DD1741S D " 01E 17415 t T y T .3 Y Z // Power Transistors - File Num ber 676 r - 3 6 - i ? 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476


    OCR Scan     		DD1741S 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* 2N8107 rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA PDF

    TA7741

    Abstract: 2N6106-2N6111 2N6476
    Text: File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 HARRIS SEMICOND SECTOR SbE D 43D2571 DÜ4DS03 21M • H A S TERMINAL DESIGNATIONS, 7 = 3 3 - < 2 / Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for


    OCR Scan     		2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 43D2571 4DS03 O-220AB 2N64732N6476 TA7741 2N6106-2N6111 2N6476 PDF

    TA8723

    Abstract: TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742
    Text: 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS o G en eral-P u rp o se M e d iu m -P o w e r Typ es for Sw itchin g and A m p lifie r A p plications : t Features: • Low saturation voltages


    OCR Scan     		2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 92C3-22540 TA8723 TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ 1C hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ 1C (V) (A) MAX fT (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6387 2N6667 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors f TO-220 Case TYPE NO. NPN PNP «C PD bvcbo BVCEO A (W) (V) (V) MIN MIN tm MAX MAX • ic (A) VCE(SAT) @ 1C (V) (A) fr (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 PDF

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


    OCR Scan     		MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125 PDF

    2sc1061

    Abstract: 2SC1626 2N6108
    Text: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40


    OCR Scan     		D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108 PDF

    mje13007

    Abstract: No abstract text available
    Text: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6040 2N6041 mje13007 PDF

    JE2901

    Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
    Text: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5


    OCR Scan     		2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 JE2901 JE802T JE802 JE801T JE702 LM3661TL-1.40 PDF

    TA8210

    Abstract: TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475
    Text: Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS 7=3 3 - £ General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: • Low saturation voltages • Complementary n-p-n and p-n-p types • Maximum safe-area-of-operation curves specified


    OCR Scan     		2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 2N6473, 2N6474* 2N6475, 2N6476" 100s2) TA8210 TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475 PDF

    JE230

    Abstract: JE370
    Text: NATL SEI1IC0ND {DISCRETE} NATL SEMICOND, DE tSDllBD □□3S4bO 7 28C 3 5 4 6 0 (D ISCRETE 7 p g; o< « HI -s U< IU JCs : in to »-‘ do in in in in »- • r-' O T-’ o O in in in in *- I Wo t-* o o o in o in r i *-* CV T-’ 03 > i S-« r- ff> c*j O


    OCR Scan     		2N5193 2N5194 2N5195 2N6107 2N6109 2N6110 O-126 OE252 MJE253 MJE254 JE230 JE370 PDF

    2N6258

    Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
    Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN


    OCR Scan     		2N4900 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N6258 2N5133 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278 PDF

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan     		2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224 PDF

    2N5133

    Abstract: 2N6030 2N4922 npn 2N5136 TP220 transistor 2N4918 2N5042 2N5143 2N6276 2N6278
    Text: ADVANCED 02 SEMICONDUCTOR DE POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP NPN PNP PNP PNP NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN PNP PNP NPN NPN PNP PNP PNP PNP NPN


    OCR Scan     		2N4900 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N5133 2N6030 2N4922 npn 2N5136 TP220 transistor 2N4918 2N5042 2N5143 2N6276 2N6278 PDF