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Vishay Intertechnologies 2N6659-E3 Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W Rohs Compliant: Yes \|Vishay 2N6659-E3
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Newark	2N6659-E3	Bulk			100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix 2N6659
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Bristol Electronics	2N6659		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2N6659		8		1	1 $6.72 10 $4.368 100 $4.368 1000 $4.368 10000 $4.368	Buy Now
Quest Components	2N6659		140			1 $77.7888 10 $77.7888 100 $60.2863 1000 $60.2863 10000 $60.2863	Buy Now
	2N6659		6			1 $9 10 $4.5 100 $4.5 1000 $4.5 10000 $4.5	Buy Now
	2N6659		5			1 $4.44 10 $3.7 100 $3.7 1000 $3.7 10000 $3.7	Buy Now
	2N6659		1			1 $4.44 10 $4.44 100 $4.44 1000 $4.44 10000 $4.44	Buy Now
ComSIT USA	2N6659		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Solitron Devices Inc 2N6659 TRANSISTOR,MOSFET,N-CHANNEL,35V V(BR)DSS,2A I(D),TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N6659		1			1 $77.7888 10 $77.7888 100 $77.7888 1000 $77.7888 10000 $77.7888	Buy Now
Motorola Semiconductor Products 2N6659 TRANSISTOR,MOSFET,N-CHANNEL,35V V(BR)DSS,2A I(D),TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N6659		1			1 $77.7888 10 $77.7888 100 $77.7888 1000 $77.7888 10000 $77.7888	Buy Now
Others 2N6659/1 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2N6659/1		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N6659 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6659	Motorola	FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor	Original	PDF
2N6659	Philips Semiconductors	N-Channel Vertical DMOS Transistor	Original	PDF
2N6659	Semelab	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR	Original	PDF
2N6659	Motorola	Switchmode Datasheet	Scan	PDF
2N6659	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6659	Motorola	TMOS SWITCHING FET TRANSISTORS	Scan	PDF
2N6659	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6659	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6659	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6659	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6659	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6659	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6659	Unknown	FET Data Book	Scan	PDF
2N6659	Semelab	MOS Transistors	Scan	PDF

2N6659	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
2N6659	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
2N6659	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF

2N6659 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TN0604N3 Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -	Original	PDF	2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
2N6660 Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh	Original	PDF	2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
2N6659-E3 Abstract: 2N6659-2 Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified	Original	PDF	2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2N6659-E3 2N6659-2
MOSFET 2n6659 Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated 1 VDS VGS ID ID IDM1 PD Drain – Source Voltage Gate – Source Voltage Drain Current Drain Current	Original	PDF	2N6659X O-205AD) MOSFET 2n6659
Untitled Abstract: No abstract text available Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified	Original	PDF	2N6659, 2N6659-2 O-205AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: 2N6659 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators	Original	PDF	2N6659
FAST DMOS FET Switches Abstract: 2N6659 Text: 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 35V 1.8Ω 1.5A Order Number / Package TO-39 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process	Original	PDF	2N6659 FAST DMOS FET Switches 2N6659
2N6659 Abstract: 2N6660 VQ1004J VQ1004P Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660	Original	PDF	2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O-205AD) P-37994--Rev. 08-Aug-94 2N6659 2N6660 VQ1004J VQ1004P
2N6660 Abstract: 2N6660 siliconix 2N6659 VQ1004J VQ1004P Text: 2N6659/2N6660, VQ1004J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ VGS = 10 V 0.8 to 2 1.1 VQ1004J/P 60 3.5 @ VGS = 10 V	Original	PDF	2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O205AD) P-37994--Rev. 2N6660 2N6660 siliconix 2N6659 VQ1004J VQ1004P
Untitled Abstract: No abstract text available Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified	Original	PDF	2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2N6659 Abstract: No abstract text available Text: 2N6659 60V Vdss N-Channel FET field Effect Transistor 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 2N6659 Online Store 2N6659 Diodes 60V Vdss N -Channel FET (field Effect Transistor) Transistors Integrated Circuits Optoelectronics	Original	PDF	2N6659 2N6659 com/2n6659
2N6661 Abstract: 2N6660 2N6661 transistor 2N6659 max 1988 Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.	OCR Scan	PDF	2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	PDF	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64
4900 SIEMENS Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	PDF	SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

2N6659 Abstract: No abstract text available Text: Superte x inc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVcss / BV dgs R dS ON (max) Id(on) (min) 35V 1,8£2 1.5A Order Number / Package TO-39 2N6659 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process	OCR Scan	PDF	2N6659 2N6659
Untitled Abstract: No abstract text available Text: LJi Supertex in c . 2N 6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVqss I R dS ON b v dgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 Advanced DMOS Technology High Reliability Devices	OCR Scan	PDF	2N6659 300jis
2N6659 Abstract: No abstract text available Text: fài Supertex inc. 2N6659 N-Channei Enhancement-Mode Vertical DMOS FET Ordering Information BVdss/ BV ^DS O N qgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process	OCR Scan	PDF	2N6659 2N6659
1004J Abstract: 2N6659 M 1004j Text: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1	OCR Scan	PDF	2N6659/2N6660, VQ1004J/P_ 2N6659 2N6660 VQ1004J/P P-37994-- 1004J M 1004j
jfet selector guide Abstract: T0-220SM Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763	OCR Scan	PDF	2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM
Untitled Abstract: No abstract text available Text: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.	OCR Scan	PDF	2N6659 2N6660 2N6661
Untitled Abstract: No abstract text available Text: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) BVdgs (max) (min) TO-39 35V 1.8£2 1.5A 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process	OCR Scan	PDF	2N6659 300jis
VN46AFD Abstract: 6178 vn0606m Text: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line	OCR Scan	PDF	VNDQ06 O-205AD) O-220SD O-237 O-226AA) 14-Pin 2N6659, 2N6660 VN46AFD, VN46AFD 6178 vn0606m
2N6659 Abstract: No abstract text available Text: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	PDF	2N6659 VNDQ06
T0220H Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046 Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758	OCR Scan	PDF	2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046

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2N6659 Datasheets (17)

2N6659 Datasheets Context Search

TN0604N3

2N6660

2N6659-E3

MOSFET 2n6659

Untitled

Untitled

FAST DMOS FET Switches

2N6659

2N6660

Untitled

2N6659

2N6661

2N6155

4900 SIEMENS

2N6659

Untitled

2N6659

1004J

jfet selector guide

Untitled

Untitled

VN46AFD

2N6659

T0220H