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    Microchip Technology Inc 2N6672

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6671

    TRANS PNP 300V 8A TO3
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    Microchip Technology Inc 2N6676

    TRANS NPN 300V 15A TO204AD
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    Microchip Technology Inc 2N6674

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    Microchip Technology Inc 2N6673

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    2N667 Datasheets (257)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N667 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6670 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6670 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6670 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6670 Unknown Transistor Replacements Scan PDF
    2N6670 Unknown Transistor Replacements Scan PDF
    2N6670 RCA Solid State Product Guide 1979 Scan PDF
    2N6671 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=8 / Hfe=10-40 / fT(Hz)=15M / Pwr(W)=150 Original PDF
    2N6671 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=8 / Hfe=10-40 / fT(Hz)=15M / Pwr(W)=150 Original PDF
    2N6671 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6671 Diode Transistor Transistor Short Form Data Scan PDF
    2N6671 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N6671 General Electric 5 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=8 / Hfe=10-40 / fT(Hz)=15M / Pwr(W)=150 Scan PDF
    2N6671 General Electric High Voltage Bipolar Power Transistors Scan PDF
    2N6671 Motorola Power Transistor Selection Guide Scan PDF
    2N6671 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6671 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6671 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6671 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6671 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N667 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6675

    Abstract: 2N6674 NPN/2N6675
    Text: JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING PIN DESCRIPTION


    Original     		2N6674 2N6675 2N6674 2N6675 NPN/2N6675 PDF

    2N6673

    Abstract: 2N6671 2N6672
    Text: SavantIC Semiconductor Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters


    Original     		2N6671 2N6672 2N6673 2N6671 2N6672 2N6673 PDF

    2N6678

    Abstract: 2N6676 2N6691 2N6693
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		MIL-PRF-19500/538 2N6676 2N6678 2N6691 2N6693 2N6676 2N6691 2N6678 2N6693 PDF

    2N6689

    Abstract: 2N6674 2N6675 2N6690
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689 2N6675 2N6690 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN High Power Silicon Transistors 2N6676 & 2N6678 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage


    Original     		2N6676 2N6678 MIL-PRF-19500/538 O-204AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6674 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		2N6674 O204AA) 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		2N6671 O204AA) 18-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6674 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		2N6674 O204AA) 18-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6678+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6678 Freq15M time600n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6676+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6676 Freq15M time600n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6678+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6678 Freq15M time600n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6671+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6671 Freq15M time500n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6674+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6674 Freq15M time600n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6673+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N6673 Freq15M time500n PDF

    power transistor 200V, 30A

    Abstract: 2N6678 Rl135 2n6677
    Text: 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER


    Original     		2N6676 2N6677 2N6678 200mA 2N6676) power transistor 200V, 30A Rl135 PDF

    2N6671

    Abstract: 2N6673 2N6672
    Text: JMnic Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Fast switching speed ・High voltage ratings APPLICATIONS ・Off-line power supplies ・High-voltage inverters ・Switching regulators


    Original     		2N6671 2N6672 2N6673 2N6671 2N6672 2N6673 PDF

    2N6674

    Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION •High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as:


    Original     		2N6674/6675 2N6674 2N6675 2N6674 NPN Transistor 10A 400V 2N6675 300V transistor npn 2a PDF

    2N6676

    Abstract: 2N6677 2N6678
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N6676 2N6677 2N6678 The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES ‘ Off-Line Power Supplies ‘ Converter Circuits *Pulse Width Modulated Regulators


    OCR Scan     		2N6676 2N6677and 2N6678 2N6677 2N6678 2N6676 PDF

    2N6679

    Abstract: HPAC-100 HPAC HXTR-2101
    Text: COMPONENTS 2N6679 HXTR-2101 Features HIGH GAIN 10.5 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE BIPOLAR TRANSISTORS GENERAL PURPOSE TRANSISTOR H E W L E T T P AC KARD G Description The 2N6679 (HXTR-2101) is an NPN bipolar transistor designed fo r high gain and o utp ut power at 4 GHz. The


    OCR Scan     		2N6679 HXTR-2101) 2N6679 HPAC-100, MIL-S-19500 HPAC-100 HPAC HXTR-2101 PDF

    BC140-16

    Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
    Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688


    OCR Scan     		ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N6679 \ \ SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 02,65 m ax - s :!'4" '- MAXIMUM RATINGS 1,1 lc 70 mA V ce 20 V P diss 900 mW @ Tc = 87 °C


    OCR Scan     		2N6679 OT-100 2N6679 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡lU CROSEMl CORP/POüJER 02 I ^ F |t ,l l S ^ S O 0 0 0 0 4 5 0 b "J~ D T '3 3 - / . 5 2N6676 2N6677 2N6678 - .T ^ H N O C O G Y .;_V V ; Po we r Tec h nö ió gÿ Co m poh e nis HIGH VOLTAGE NPN TRANSISTORS 15 AMPERES : 400 VOLTS 30 <01 1 » 3 Ï3901 139961 MAX


    OCR Scan     		2N6676 2N6677 2N6678 2N6676, 2N6677 2N6678 0D00431 PDF

    RJH6674

    Abstract: CA3725 Harris RJH6675 2N6674 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675
    Text: T Power Transistors SEMICOND SECTOR - IB File Number 1164 4302271 002DGS4 7 « H A S 2N6674, 2N6675, RJH6674, RJH6675 HARRIS - * 3 27E 10-A SwitchRlaX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage


    OCR Scan     		2N6674, 2N6675, RJH6674, RJH6675 002DG54 O-218AC 2N6674 2N6675 RJH6674 CA3725 Harris RJH6675 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675 PDF

    2N6673

    Abstract: No abstract text available
    Text: SGS-THOMSON RülD@œi[LI BTIs! IS!lBCi 2N6673 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS . . . • . SWITCHING REGULATORS INVERTERS SOLENOID AND REU\Y DRIERS MOTOR CONTROLS DEFLECTION CIRCUITS 2 DESCRIPTIONS ■ High voltage, high speed switching power


    OCR Scan     		2N6673 2N6673 PDF