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    2N6851 Price and Stock

    Infineon Technologies AG 2N6851

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    Future Electronics 2N6851 100
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    International Rectifier JANTX2N6851

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    Bristol Electronics JANTX2N6851 55
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    Intersil Corporation 2N6851TX

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    Bristol Electronics 2N6851TX 2
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    Harris Semiconductor JANTXV2N6851

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 200V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF (Also Known As: 2N6851JANTXV)
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    Quest Components JANTXV2N6851 111
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    JANTXV2N6851 52
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    JANTXV2N6851 1
    • 1 $115.6824
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    International Rectifier 2N6851/IRFF9230

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    Quest Components 2N6851/IRFF9230 25
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    Find more 2N6851 price and stock on Findchips.com

    2N6851 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6851 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6851 Semelab P-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    2N6851 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6851 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6851 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851 Unknown FET Data Book Scan PDF
    2N6851 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6851 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6851P Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851TX Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6851TXV Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6851 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6851

    Abstract: No abstract text available
    Text: 2N6851 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		PDF 2N6851 O205AF) 11-Oct-02 2N6851

    2N6851

    Abstract: No abstract text available
    Text: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N6851 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6851

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage


    Original     		PDF 2N6851 -200V 200mW/Â O-205AD)

    2N6851

    Abstract: ON950
    Text: 2N6851 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -200 0.80 -4.0 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET


    Original     		PDF 2N6851 MILS19500/564 O205AF P37010Rev. 2N6851 ON950

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage


    Original     		PDF 2N6851 -200V 200mW/Â O-205AD)

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: irf P-Channel MOSFET audio IRFE9230 JANS2N6851U JANTX2N6851U JANTXV2N6851U
    Text: PD - 9.1717 IRFE9230 2N6851U REPETITIVE AVALANCHE AND dv/dt RATED 2N6851U HEXFET TRANSISTOR 2N6851U [REF:MIL-PRF-19500/564] P-CHANNEL Ω , HEXFET -200Volt, 0.80Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of


    Original     		PDF IRFE9230 JANTX2N6851U JANTXV2N6851U JANS2N6851U MIL-PRF-19500/564] -200Volt, IRF P CHANNEL MOSFET 10A 100V irf P-Channel MOSFET audio IRFE9230 JANS2N6851U JANTX2N6851U JANTXV2N6851U

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N6851 M1L-S-19500I564 1503C) P-37010--

    2n6851

    Abstract: No abstract text available
    Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET


    OCR Scan     		PDF 2n6851 MIL-S-19500/564 Param2n6851_ P-37010â 2SM735

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF 2N6851 -200V cs-43 2N6851 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6851 JANTX

    Untitled

    Abstract: No abstract text available
    Text: 43 02 271 0 0 5 4 50 0 072 • ¡jy H A R R HAS 2N6851 I S Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -4.0A, -200V • rDS on = ° - 8 0 fi SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF 2N6851 -200V 2N6851 92CS-43314 00S4504

    2N6801-SM

    Abstract: BFC49
    Text: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18


    OCR Scan     		PDF 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L BFC49

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1717 International Rectifier I R IRFE9230 2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D 2N6851 U HEXFET TRANSISTOR 2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET


    OCR Scan     		PDF IRFE9230 JANTX2N6851 JANTXV2N6851 JANS2N6851 MIL-PRF-19500/564] -200Volt,

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2N6802 JANTX

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF I-200 2N6802 JANTX

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


    OCR Scan     		PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX