2N706A TRANSISTOR Search Results

2N706A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2N706A TRANSISTOR Price and Stock

Filter by Manufacturer


Microchip Technology Inc 2N706A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N706A					1 - 10 - 100 $85.63 1000 $85.63 10000 $85.63	Buy Now

2N706A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2n706a Abstract: No abstract text available Text: 2N706A Si NPN Power HF BJT 2.76 Transistors Bipolar Silicon NPN Power Transistors . Page 1 of 1 Enter Your Part # Home Part Number: 2N706A Online Store 2N706A Diodes Si NPN Power HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	2N706A 2N706A O-206AA com/2n706a	PDF
2N706A Abstract: npn transistor wc 2N706 2n706a transistor J 2N706A Text: 0 /V E F ^ IP 2N706A NEW ENGLAND SEMICONDUCTOR SILICON SWITCHING NPN TRANSISTORS • • • FAST SWITCHING LOW SATURATION VOLTAGE HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	2N706A 2N706A 32ESTING npn transistor wc 2N706 2n706a transistor J 2N706A	PDF
2N706 Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368 Text: MOTOROLA SC XSTRS/R F D \| b3b72SM OOflbait. 1 \| M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB	OCR Scan	2n706a 2n706 2n706b 2n706ab 2N706B 10Vdc J 2N706 2N706 JAN 2N2368	PDF
2n2222 itt Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711 Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51	OCR Scan	VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 2n2222 itt 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711	PDF
2N2222A itt Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914 Text: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C	OCR Scan	BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2N2222A itt itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild	PDF
P348A Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68 Text: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50	OCR Scan	BFR37 BFW68 30792F BFX18 19041D BFX31 BFY74 19068D BFY75 30795X P348A BFR37 SGS transistor C740 sgs-ates 2n2388 19142e C720 2N2219 transistor	PDF
Transistor BC177 Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177 Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696	OCR Scan	N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177	PDF
Untitled Abstract: No abstract text available Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran	OCR Scan	100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC	PDF
2n706a Abstract: transistor 2n2369 Text: M A X IM U M R A T IN G S Rating Symbol Value Unit VCEO 15 Vdc C o lle ctor-E m itter Voltage 1 V CER 20 Volts Collector-Base Voltage VCBO 25 Volts Em itter-Base Voltage Vebo 5.0 Volts 'c 50 mA = 255C PD 0.3 2.0 W att mW-'C Total Device D issipation <n T c = 25’C	OCR Scan	2N706A O-206AA) 2n706a transistor 2n2369	PDF
BSY87 Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55 Text: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«	OCR Scan	VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 BSY87 BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55	PDF
Untitled Abstract: No abstract text available Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. 2N2483 V CBO ^CEO V EBO M Min (V) Min IV) Min 60 60 6 Pc (W) 'c (A) ^CM 'cao (A) (pA) ^C6 (V) 0.36 0.05 0.01 ^CE e (V) Max	OCR Scan	2N2483 2N720 2N720A 2N834 2N910 2N911	PDF
P346A Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19 Text: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20	OCR Scan	BSX19 19552B BSX20 19553X BSY95A 19572G 19573C ME9001 19331F ME9002 P346A ME8003 SGS C407 BSX20 2n2222a BFR37 sgs-ates transistors C760 P348A	PDF
BC118 Abstract: transistor BC118 BFR37 SGS 2n2388 2N706 BC125 BC537 fairchild to-106 fairchild semiconductors BC537-10 Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la stic P a ck a g e TO 92, T O 105, TO 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .	OCR Scan	BC118 35273E BC125 35274C BC537 5275A BC537-6 3S276X BC537-10 35277H transistor BC118 BFR37 SGS 2n2388 2N706 fairchild to-106 fairchild semiconductors	PDF
BFY52 equivalent Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63 Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device	OCR Scan	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent	PDF

BC117 Abstract: T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2N5831 2n918 plastic SGS-ATES Text: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts	OCR Scan	T0105) BC117 35317B 2N5830 35318X 2N5831 35319R 2N918 19143C 2N930 T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2n918 plastic SGS-ATES	PDF
BFR97 Abstract: sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51 Text: ITT Semiconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h a ra c te ristic s @	OCR Scan	VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 BFR97 sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51	PDF
BC107 equivalent transistors Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365 Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A	OCR Scan	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors 2N2475	PDF
TO-39 1000 V Abstract: No abstract text available Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military	OCR Scan	BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V	PDF
2n2222 fairchild Abstract: BFR37 2N915 2n930 price P346A 2N2369 2N2369A 2N914 BC119 BSX20 Text: Fairchild Semiconductors Semicondti^Hn Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors Metal Can TO IS R EFER EN C E T A B L E For medium speed - see General Purpose Section. C H A R A C T E R IS T IC S @ 25"C M A X R A T IN G S	OCR Scan	BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 fairchild BFR37 2N915 2n930 price P346A BC119	PDF
2N2475 Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36 Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type	OCR Scan	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI	PDF
BCY78 Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79 Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696	OCR Scan	N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79	PDF
bcy79 equivalent Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A	OCR Scan	BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025	PDF
BU102 Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117 Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«	OCR Scan	VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 BU102 BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117	PDF
BC107 Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79 Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple ment = 25°C lc !c mW mA MHz mA 150 100	OCR Scan	2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79	PDF

2N706A TRANSISTOR Search Results

2N706A TRANSISTOR Result Highlights (5)

2N706A TRANSISTOR Price and Stock

Microchip Technology Inc 2N706A

2N706A TRANSISTOR Datasheets Context Search

2n706a

2N706A

2N706

2n2222 itt

2N2222A itt

P348A

Transistor BC177

Untitled

2n706a

BSY87

Untitled

P346A

BC118

BFY52 equivalent

BC117

BFR97

BC107 equivalent transistors

TO-39 1000 V

2n2222 fairchild

2N2475

BCY78

bcy79 equivalent

BU102

BC107