ln393
Abstract: TAG 203 350 PS-120 C231A 2NS505 C230A bj100
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A
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lB15CL05
lB15Cl10
lB15CL20
lB15CL30
lB15CL40
lB40CL05
lB40CL10
lB40CL20
lB40CL30
lB40CL40
ln393
TAG 203 350
PS-120
C231A
2NS505
C230A
bj100
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ln393
Abstract: 2SF102B E0102FB cw12b 2N691 SFOR1B42 2N685AS
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A
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lB15CL05
lB15Cl10
lB15CL20
lB15CL30
lB15CL40
lB40CL05
lB40CL10
lB40CL20
lB40CL30
lB40CL40
ln393
2SF102B
E0102FB
cw12b
2N691
SFOR1B42
2N685AS
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lN330
Abstract: 2N3255 TAG 203 350 ln393 GE C52U ln3302 Coors motorola 2n491 wagner 2N683AS
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A
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lB15CL05
lB15Cl10
lB15CL20
lB15CL30
lB15CL40
lB40CL05
lB40CL10
lB40CL20
lB40CL30
lB40CL40
lN330
2N3255
TAG 203 350
ln393
GE C52U
ln3302
Coors
motorola 2n491
wagner
2N683AS
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2N7579
Abstract: 2N767 2N7579U2
Text: PD-94299C 2N7579U2 IRHNA67160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67160 Radiation Level 100K Rads (Si) RDS(on) 0.010Ω ID 56A* IRHNA63160 300K Rads (Si) 0.010Ω 56A* International Rectifier’s R6TM technology provides
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PD-94299C
IRHNA67160
IRHNA63160
2N7579U2
90MeV/
MIL-STD-750,
MlL-STD-750,
2N7579
2N767
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: PD-94299C 2N7579U2 IRHNA67160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67160 Radiation Level 100K Rads (Si) RDS(on) 0.010Ω ID 56A* IRHNA63160 300K Rads (Si) 0.010Ω 56A* International Rectifier’s R6TM technology provides
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PD-94299C
2N7579U2
IRHNA67160
IRHNA63160
90MeV/
MIL-STD-750,
MlL-STD-750,
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2N3986
Abstract: 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331
Text: | lemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type *Note 1 Forward Current If (»mp«) 2N6S1 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N764* 2N765* 2N766* 2N767" 2N876
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2N661
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N3986
2n1696
2n4146
2N3228
2N4148
LS 2027
2N3555
2n4327
2N6167
2N4331
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2N1602
Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Text: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current
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2N682
2N685
T0-48
2N686
2N687
2N688
2N889
2N690
2N764*
2N765Â
2N1602
2n1649
2N893
2N6241
2nu8
2N6401
2N2679
2n4327
2N3228
2n4146
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2H5061
Abstract: 2N268 2N2601 2N893
Text: discrete devices lir^ ] JEmitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silico n controlled rectifiers Type 'Note 1 Forward Current It (Amps) Max. Forward Max. Reverse Voltasti V fom / V rom (volts) (Noto 2) Maximum
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2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N680
2H5061
2N268
2N2601
2N893
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2N3106
Abstract: 2N4146 2N4148
Text: discrete devices | jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current If (Amps) Max. Forward M ai. Reverie Voltages Vfom /V rom (volts) (Note 2) Maximum Junction Temperature
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2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N3106
2N4146
2N4148
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2N3986
Abstract: LS 2027 2N4146 2N3086 2n3986 sis 2N4148 2N4327 2N1689 LS 2027 amp 2N4331
Text: ^ discrete devices jemitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current It (»mp«) Mai. Forward M ai. Reverie Voltages V f o m /V ron (volts) (Note 2) Mailmum
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2n681
2n682
2n683
2n684
2n685
2n686
2n687
2n688
2nb89
2n690
2N3986
LS 2027
2N4146
2N3086
2n3986 sis
2N4148
2N4327
2N1689
LS 2027 amp
2N4331
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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2N8402
Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
Text: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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