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3M Interconnect 1U30A-MB2-SA1-300-CE USB3 CABLE ASSEMBLY 3 METER
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DigiKey	1U30A-MB2-SA1-300-CE	Box	48		1	1 $39.65 10 $32.319 100 $26.4625 1000 $26.4625 10000 $26.4625	Buy Now
Mouser Electronics	1U30A-MB2-SA1-300-CE		24			1 $50.19 10 $36.16 100 $30.03 1000 $27.5 10000 $27.5	Buy Now
3M Interconnect 1U30A-MB2-SA1-300 USB3 VISION INDUSTRIAL CAMERA
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DigiKey	1U30A-MB2-SA1-300	Bulk	38		1	1 $43.75 10 $40.146 100 $35.2567 1000 $34.22728 10000 $34.22728	Buy Now
Avnet Americas	1U30A-MB2-SA1-300	Bulk		19 Weeks, 1 Days	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	1U30A-MB2-SA1-300					1 $53.89 10 $53.87 100 $52.75 1000 $52.75 10000 $52.75	Get Quote
3M Interconnect 1U30G-MB2-SA1-300 USB3 VISION INDUSTRIAL CAMERA
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DigiKey	1U30G-MB2-SA1-300	Bulk	31		1	1 $121.42 10 $98.994 100 $90.0124 1000 $90.0124 10000 $90.0124	Buy Now
Avnet Americas	1U30G-MB2-SA1-300	Bulk		19 Weeks, 1 Days	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	1U30G-MB2-SA1-300					1 - 10 - 100 $152.27 1000 $152.27 10000 $152.27	Get Quote
3M Interconnect 1U30S-MB2-SA1-300 USB3 CABLE ASSEMBLY 3 METER
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DigiKey	1U30S-MB2-SA1-300	Box	2		1	1 $70.06 10 $57.115 100 $49.3261 1000 $49.3261 10000 $49.3261	Buy Now
Mouser Electronics	1U30S-MB2-SA1-300		40			1 $67.75 10 $62.18 100 $54.6 1000 $54.6 10000 $54.6	Buy Now
NDK (NIHON DEMPA KOGYO CO., LTD) NX5032SA-13.000000MHZ-G1 CRYSTAL 13.0000MHZ 8PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NX5032SA-13.000000MHZ-G1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NX5032SA-13.000000MHZ-G1	Reel			1,000	1 - 10 - 100 - 1000 $0.495 10000 $0.495	Buy Now
	NX5032SA-13.000000MHZ-G1	Digi-Reel			1	1 $0.87 10 $0.87 100 $0.87 1000 $0.87 10000 $0.87	Buy Now

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2SA1300 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1300	Transys Electronics	Plastic-Encapsulated Transistors	Original	PDF
2SA1300	Unisonic Technologies	PNP EPITAXIAL SILICON TRANSISTOR	Original	PDF
2SA1300	Various Russian Datasheets	Transistor	Original	PDF
2SA1300	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1300	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1300	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1300	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1300	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1300	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1300	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1300	Toshiba	PNP transistor	Scan	PDF
2SA1300	Toshiba	TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)	Scan	PDF
2SA1300	Toshiba	TO-92 Transistors	Scan	PDF
2SA1300	Toshiba	TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF

2SA1300-BL	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1300BL	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1300-G	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1300GR	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1300-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1300Y	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF

2SA1300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1300 Abstract: No abstract text available Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	PDF	2SA1300 2SA1300
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)	Original	PDF	2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012
2SA1300 Abstract: No abstract text available Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1300 2SA1300
2sA1300 transistor Abstract: 2SA1300 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range	Original	PDF	2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300
2SA1300 Abstract: No abstract text available Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	PDF	2SA1300 2SA1300
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)	Original	PDF	2SA1300 -10mA -100mA 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR（PNP ） TO—92 FEATURES Power dissipation PCM : 0.75 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -20 V Operating and storage junction temperature range	Original	PDF	2SA1300 -10mA 30MHz 270TYP 050TYP
Untitled Abstract: No abstract text available Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES 1 High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	PDF	2SA1300 -50mA) OT-89 -50mA QW-R208-012
2SA1300 Abstract: No abstract text available Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1300 2SA1300
TO92 LOW VCE PNP Abstract: No abstract text available Text: 2SA1300 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	2SA1300 -10mA -100mA 30MHz TO92 LOW VCE PNP
2SA1300 Abstract: No abstract text available Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1300 2SA1300
2SC1815 NPN SOT-23 Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213	Original	PDF	2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
2SA1300 Abstract: 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR Text: 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High DC Current gain and excellent hFE linearity Low Saturation Voltage G 2SA1300-Y	Original	PDF	2SA1300 2SA1300-Y 2SA1300-GR 2SA1300-BL 19-Jan-2011 -10mA, 30MHz 2SA1300 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR
2SA1300 Abstract: No abstract text available Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range	Original	PDF	2SA1300 -10mA -100mA 30MHz 2SA1300

2SA1300 Abstract: No abstract text available Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SA1300 2SA1300
Untitled Abstract: No abstract text available Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	PDF	2SA1300 -50mA) -50mA QW-R201-045
2SA1300 Abstract: 2sA1300 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	2SA1300 -10mA -100mA 30MHz 2SA1300 2sA1300 transistor
2sA1300 transistor Abstract: 2SA1300 Text: 2SA1300 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150℃	Original	PDF	2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300
2SA1300 Abstract: QW-R208-012 Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION Strobo Flash Applications. Medium Power Amplifier Applications. FEATURES 1 High DC Current Gain and Excellent hFE Linearity. hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)	Original	PDF	2SA1300 -50mA) OT-89 QW-R208-012 2SA1300
2SA1300 Abstract: No abstract text available Text: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)	OCR Scan	PDF	2SA1300 961001EAA2' 2SA1300
Untitled Abstract: No abstract text available Text: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)	OCR Scan	PDF	2SA1300
2SA1309 Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280 Text: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303	OCR Scan	PDF	Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N sa1312 2SC3280
Untitled Abstract: No abstract text available Text: 2SA1300 TOSHIBA TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 3 Q0 Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC C urrent Gain and Excellent h p g Linearity : hpE (i) = 140—600 (V ç e = —IV, I ç = —0.5A)	OCR Scan	PDF	2SA1300 961001EAA2'
A1300 transistor Abstract: A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y 2SA1300 SA1300 br A1300 transistor Text: TOSHIBA 2SA1300 2 S A 1 300 T O SH IB A T R A N SISTO R ST R O BO FLASH A PP LIC A TIO N S SILICO N PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M P O W ER A M P LIF IER A PP LIC A T IO N S . 5.1 M A X . High DC Current Gain and Excellent hpE Linearity	OCR Scan	PDF	2SA1300 A1300 transistor A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y 2SA1300 SA1300 br A1300 transistor

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2SA1300 Price and Stock

3M Interconnect 1U30A-MB2-SA1-300-CE

3M Interconnect 1U30A-MB2-SA1-300

3M Interconnect 1U30G-MB2-SA1-300

3M Interconnect 1U30S-MB2-SA1-300

NDK (NIHON DEMPA KOGYO CO., LTD) NX5032SA-13.000000MHZ-G1

2SA1300 Datasheets (20)

2SA1300 Datasheets Context Search

2SA1300

Untitled

2SA1300

2sA1300 transistor

2SA1300

Untitled

Untitled

Untitled

2SA1300

TO92 LOW VCE PNP

2SA1300

2SC1815 NPN SOT-23

2SA1300

2SA1300

2SA1300

Untitled

2SA1300

2sA1300 transistor

2SA1300

2SA1300

Untitled

2SA1309

Untitled

A1300 transistor