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    2SA176 Price and Stock

    Panasonic Electronic Components 2SA17670QA

    TRANS PNP 300V 0.07A TO92-B1
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    DigiKey 2SA17670QA Ammo Pack
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    onsemi 2SA1768T-AN

    TRANS PNP 160V 0.7A 3NMP
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    Rochester Electronics 2SA1768T-AN 22,500 1
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    Rochester Electronics LLC 2SA1768T-AN

    TRANS PNP 160V 0.7A 3NMP
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    DigiKey 2SA1768T-AN Bulk 1,110
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    Toshiba America Electronic Components 2SA1761,F(J

    TRANS PNP 50V 3A TO92MOD
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    Flip Electronics 2SA1768S-AN

    BIPOLAR (BJT) TRANSISTOR PNP 160
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    DigiKey 2SA1768S-AN Reel 500
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    2SA176 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA176 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA176 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA176 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA176 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA176 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA176 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA176 Unknown Cross Reference Datasheet Scan PDF
    2SA1760 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1760 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1760 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1760 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1760 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1760 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SA1760 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SA1761 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4604 Original PDF
    2SA1761 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1761 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1761 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1761 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1761 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SA176 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1761 2SC4604. A1761 2SA1761 2SC4604

    2SC1473

    Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
    Text: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.


    Original     		PDF 2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 2SA1018 2SA1767 TRANSISTOR 2sc1473

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W


    Original     		PDF 2SC4606 2SA1762

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 6.9±0.1 1.0 R 0.9 • Absolute Maximum Ratings * (Ta=25˚C) (0.85) Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SA1762 2SC4606

    2sc1473

    Abstract: 2sa1473
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2


    Original     		PDF 2002/95/EC) 2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 2sa1473

    2sA1766

    Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
    Text: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.


    Original     		PDF ENN3182B 2SA1766 2SA1766] 25max 2sA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al

    2SC4612

    Abstract: 2SA1768 ITR04536 ITR04537
    Text: Ordering number:ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions • Color TV sound output, converter, inverter. unit:mm 2064A Features [2SA1768/2SC4612] · Adoption of MBIT process.


    Original     		PDF ENN3582 2SA1768/2SC4612 2SA1768/2SC4612] 2SA1768 2SC4612 2SA1768 ITR04536 ITR04537

    2SA1762

    Abstract: 2SC4606
    Text: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W


    Original     		PDF 2SC4606 2SA1762 2SA1762 2SC4606

    2SA1767

    Abstract: 2SC1473A
    Text: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SA1767 2SC1473A 2SA1767 2SC1473A

    2SA1767

    Abstract: 2SC1473A
    Text: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SA1767 2SC1473A 2SA1767 2SC1473A

    2SA1768

    Abstract: 2SC4612 ITR04536 ITR04537 ITR04538 ITR04539 N358
    Text: 注文コード No. N 3 5 8 2 2SA1768/2SC4612 No. N3582 12500 2SA1768 / 2SC4612 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高耐圧スイッチング用 用途 ・カラーテレビ音声出力 , コンバータ , インバータ。


    Original     		PDF 2SA1768/2SC4612 N3582 2SA1768 2SC4612 2SA1768 100mA 100mA ITR04549 2SC4612 ITR04536 ITR04537 ITR04538 ITR04539 N358

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1761 2SC4604. A1761 2SA1761 2SC4604

    Untitled

    Abstract: No abstract text available
    Text: 2SA1768 Ordering number : EN3582A SANYO Semiconductors DATA SHEET 2SA1768 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons • Color TV sound output, converter, inverter Features • • • Adoption of MBIT process


    Original     		PDF 2SA1768 EN3582A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1764 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)8.0


    Original     		PDF 2SA1764 Freq450M

    Untitled

    Abstract: No abstract text available
    Text: 2SA1769 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)700m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)250m


    Original     		PDF 2SA1769 Freq120MÃ req120MÃ

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)


    Original     		PDF 2SA1762 2SC4606

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SA1767 2SC1473A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2


    Original     		PDF 2002/95/EC) 2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions • Color TV sound output, converter, inverter. unit:mm 2064A Features [2SA1768/2SC4612] · Adoption of MBIT process.


    Original     		PDF ENN3582 2SA1768/2SC4612 2SA1768/2SC4612] 2SA1768

    Transistor B C 458

    Abstract: c458 2sa1766
    Text: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity


    OCR Scan     		PDF 3182B 250mm2 2SA1766 1200MO/6279MO Transistor B C 458 c458 2sa1766

    silicon pnp transistor

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: EN 3180B NO.3180B // 2SA1764 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features - F ast switching speed •Low collector saturation voltage ■High gain-bandwidth product • Small collector capacitance


    OCR Scan     		PDF 3180B 2SA1764 2SA1764-applied 2SC4453 1200MO/6279MO silicon pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD 100mA --75mA --10V,

    JJ-500

    Abstract: 2SA1768 2SC4612 SC4612
    Text: Ordering num ber:EN 3582 SAmYO 2SA1768/2SC4612 No.3582 PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications A pplications . Color TV sound output, converter, inverter F eatu res . Adoption of MBIT process . High breakdown voltage, large current capacity


    OCR Scan     		PDF 2SA1768/2SC4612 2SA1768 JJ-500 2SA1768 2SC4612 SC4612

    A1761

    Abstract: 2SA1761 2SC4604
    Text: TO SH IBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX Low Colleetor-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (Ic = -1.5A ) High Speed Switching Time : ^ ^ = 0.2/^ (Typ.)


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD A1761 2SA1761 2SC4604