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    2SB1127 TRANSISTOR Search Results

    2SB1127 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB1127 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1127

    Abstract: 2sb1127 TRANSISTOR
    Text: Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Package Dimensions • Strobe, power supplies, relay drivers, lamp drivers. unit:mm 2009A Features [2SB1127] · Adoption of FBET, MBIT processes.


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    PDF 2SB1127 2SB1127] O-126 2SB1127 2sb1127 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Package Dimensions • Strobe, power supplies, relay drivers, lamp drivers. unit:mm 2009B Features [2SB1127] 8.0 · Adoption of FBET, MBIT processes.


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    PDF ENN2452 2SB1127 2009B 2SB1127]

    2SB1127

    Abstract: No abstract text available
    Text: 2SB1127 Ordering number : ENN2452A PNP Epitaxial Planar Silicon Transistor 2SB1127 Flash, High-Current Switching Applications Applications • Flash, power supplies, relay drivers, lamp drivers. Features • • • • Adoption of FBET, MBIT processes. Low saturation voltage.


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    PDF 2SB1127 ENN2452A 2SB1127

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quick selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


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    PDF O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707

    1C00

    Abstract: 2SB1127
    Text: Ordering number: EN2452 2SB1127 PNP Epitaxial Planar Silicon Transistor 20V/5A Swtching Applications Applications * Strobe, power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low saturation voltage . Large current capacity


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    PDF EN2452 2SB1127 1C00

    2SB1127

    Abstract: 1C00 hj30
    Text: Ordering number; EN2452 2SB1127 No.2452 PNP Epitaxial Planar Silicon Transistor 20V/5A Swtching Applications Applications . Strobe, power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low saturation voltage . Large current capacity


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    PDF EN2452 2SB1127 707l3 1C00 hj30

    transistor 2SB1201

    Abstract: transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250
    Text: T P T i n y Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possibleto make electronic equipment smaller and slimmer.


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    PDF O-126 T0-220AB 2SA1641 2SC4306 2SSA1830 2SC4734 2SA1749 2SC4564 min2000 2SD894 transistor 2SB1201 transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250

    2SB612K

    Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
    Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]


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    PDF T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417

    2sa1562

    Abstract: No abstract text available
    Text: TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,TO-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


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    PDF O-126 O-220AB Tc-25^ 2SD1800 2SA1731 2SC4522 2SA1732 2SC4523 2SD1153 MT980522TR 2sa1562

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


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    PDF O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    PDF 2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288