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Panasonic Electronic Components 2SB14880PA TRANS PNP 400V 0.5A MT-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB14880PA	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.24506	Buy Now
Toshiba America Electronic Components 2SB1481(TOJS,Q,M) TRANS PNP 100V 4A TO220NIS
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DigiKey	2SB1481(TOJS,Q,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SB1481
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB1481		80			1 $4.41 10 $2.205 100 $2.205 1000 $2.205 10000 $2.205	Buy Now

2SB148 Datasheets (57)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB148	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SB148	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB148	Unknown	Transistor Replacements	Scan	PDF
2SB148	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SB148	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB148	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SB148	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SB148	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB148	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1481	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1481	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1481	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB1481	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB1481	Unknown	Transistor Substitution Data Book 1993	Scan	PDF

2SB1481	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1481	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1481	Toshiba	Silicon PNP transistor for switching applications	Scan	PDF
2SB1481	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE	Scan	PDF
2SB1481(TOJS,Q,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 4A 100V TO220-3	Original	PDF
2SB1482	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SB148 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D2241 Abstract: TRANSISTOR D2241 2SD2241 2SB1481 Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics	Original	PDF	2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SD2241 2SB1481
TRANSISTOR D2241 Abstract: D2241 Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics	Original	PDF	2SD2241 2SB1481 TRANSISTOR D2241 D2241
2SB1488 Abstract: No abstract text available Text: Transistors 2SB1488 Silicon PNP triple diffusion planar type For power switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • High-speed switching • High collector-base voltage (Emitter open) VCBO	Original	PDF	2SB1488 2SB1488
D2241 Abstract: TRANSISTOR D2241 2SB1481 2SD2241 Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)	Original	PDF	2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SB1481 2SD2241
B1481 Abstract: 2SB1481 2SD2241 Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241	Original	PDF	2SB1481 2SD2241 B1481 2SB1481 2SD2241
B1481 Abstract: 2SB1481 2SD2241 2SB148 Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241	Original	PDF	2SB1481 2SD2241 -55oducts B1481 2SB1481 2SD2241 2SB148
2SB1481 Abstract: 2SD2241 Text: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications	Original	PDF	2SB1481 O-220F 2SD2241 O-220F) -100V 2SB1481 2SD2241
2SD2241 Abstract: 2SB1481 rl10c Text: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications	Original	PDF	2SD2241 O-220F 2SB1481 VCCA30V 2SD2241 2SB1481 rl10c
2SB1488 Abstract: No abstract text available Text: Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 1.05 2.5±0.1 ±0.05 4.0 0.8 ● 1.0 1.0 14.5±0.5 0.65 max. +0.1 0.45–0.05 2.5±0.5 * Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –400	Original	PDF	2SB1488 2SB1488
B14-81 Abstract: No abstract text available Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241	Original	PDF	2SB1481 2SD2241 SC-67 2-10R1A B14-81
D2241 Abstract: TRANSISTOR D2241 Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)	Original	PDF	2SD2241 2SB1481 SC-67 2-10R1A D2241 TRANSISTOR D2241
2SB1481 Abstract: No abstract text available Text: IziieuiJ ^£.mi-(2onductoi ^-Pioducti, Una. Ls TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1481 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-100V(Min)	Original	PDF	2SB1481 -100V 2SD2241 O-220F -10rnA; -100V; 2SB1481
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1488 Silicon PNP triple diffusion planar type For power switching Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • High forward current transfer ratio hFE • High-speed switching	Original	PDF	2002/95/EC) 2SB1488
transistor 2SB1488 Abstract: 2SB1488 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1488 Silicon PNP triple diffusion planar type For power switching Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo	Original	PDF	2002/95/EC) 2SB1488 transistor 2SB1488 2SB1488

Darlington NPN Silicon Diode Abstract: DARLINGTON 3A 100V npn 2SB1481 2SD2241 Text: Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain : hFE=2000 Min ・Low saturation voltage ・Complement to type 2SB1481 ・DARLINGTON APPLICATIONS ・With switching applications	Original	PDF	2SD2241 O-220F 2SB1481 VCC30V Darlington NPN Silicon Diode DARLINGTON 3A 100V npn 2SB1481 2SD2241
2SB1482 Abstract: No abstract text available Text: 2SB1482 Transistor, PNP Features Dimensions Units : mm available in M RT package 2SB1482 (MRT) low co lle ctor saturation voltage, typically V CE(sat) = -1 .0 V (m ax) at Ic /I b = - 4 A/-0.1 A excellent current-to-gain characteristics 1.0 ta Applications	OCR Scan	PDF	2SB1482 2SB1482
2SB1481 Abstract: 2SD2241 Text: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR 2 S B 1 481 SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE Unit in mm High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)	OCR Scan	PDF	2SB1481 2SD2241 2SB1481
2SB1481 Abstract: 2SD2241 T32001 Text: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)	OCR Scan	PDF	2SB1481 2SD2241 2SB1481 T32001
Untitled Abstract: No abstract text available Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241	OCR Scan	PDF	2SB1481 2SD2241
2SD2241 Abstract: 2SB1481 S5 3000 Text: TOSHIBA 2SD2241 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 Unit in mm SW ITCHING APPLICATIONS • High DC Current Gain • r : hp^ —2000 Min. <v> o Low Saturation Voltage : V q £ (sat) = l-5V (Max.) cn CO O Complementary to 2SB1481 1.1 1.1	OCR Scan	PDF	2SD2241 2SB1481 100//S* 2SD2241 2SB1481 S5 3000
Untitled Abstract: No abstract text available Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • High DC Current Gain : hpE = 2000 Min. (VCE = -2 V , IC= -1.5A ) Low Saturation Voltage : Vc e (sat)~ —1-5V (Max.) (Iq = —3A) Complementary to 2SD2241	OCR Scan	PDF	2SB1481 2SD2241
Untitled Abstract: No abstract text available Text: T O S H IB A 2SD2241 2SD2241 TO SHIBA TRANSISTOR SW ITCHING APPLICATIONS • • • SILICON NPN EPITAXIAL TYPE Unit in mm ^ 3.2 ± 0.2 1 0 1 0.3 High DC Current Gain : hpg = 2000 Min. Low Saturation Voltage : V q e = l-5V (Max.) Complementary to 2SB1481	OCR Scan	PDF	2SD2241 2SB1481
Untitled Abstract: No abstract text available Text: 2SB1481 SILICON PNP EPITAXIAL TYPE U nit in mm SW ITCHING APPLICATIONS 10 ±0.3 • • • High DC Current Gain : hFE = 2000 M m . (V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat) = — (Max.) (Ic = —3A) Complementary to 2SD2241 W - M A X I M U M RATI NGS (Ta = 2 5°C)	OCR Scan	PDF	2SB1481 2SD2241 SC-67
2SB1481 Abstract: 2SD2241 Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -1.5A ) Low Saturation Voltage : Vq^ (sat)“ —1.5V (Max.) (I0 = —3A)	OCR Scan	PDF	2SB1481 2SD2241 2SB1481

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2SB148 Search Results

2SB148 Price and Stock

Panasonic Electronic Components 2SB14880PA

Toshiba America Electronic Components 2SB1481(TOJS,Q,M)

Toshiba America Electronic Components 2SB1481

2SB148 Datasheets (57)

2SB148 Datasheets Context Search

D2241

TRANSISTOR D2241

2SB1488

D2241

B1481

B1481

2SB1481

2SD2241

2SB1488

B14-81

D2241

2SB1481

Untitled

transistor 2SB1488

Darlington NPN Silicon Diode

2SB1482

2SB1481

2SB1481

Untitled

2SD2241

Untitled

Untitled

Untitled

2SB1481