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    2SB169 Search Results

    2SB169 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1691WL-TL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
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    2SB169 Price and Stock

    ROHM Semiconductor 2SB1694T106

    TRANS PNP 30V 1A UMT3
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    ROHM Semiconductor 2SB1695KT146

    TRANS PNP 30V 1.5A SMT3
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    ROHM Semiconductor 2SB1695TL

    TRANS PNP 30V 1.5A TSMT3
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    ROHM Semiconductor 2SB1690KT146

    TRANS PNP 12V 2A SMT3
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    ROHM Semiconductor 2SB1698T100

    TRANS PNP 30V 1.5A MPT3
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    2SB169 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB169 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB169 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB169 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB169 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB169 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB169 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB169 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB169 Unknown Cross Reference Datasheet Scan PDF
    2SB1690 ROHM General purpose amplification(-12V, -2A) Original PDF
    2SB1690 ROHM General purpose amplification(-12V, -2A) Original PDF
    2SB1690 ROHM General Purpose Amplification (-12 V, -2 A) Original PDF
    2SB1690K ROHM General purpose amplification (-12V, -2A) Original PDF
    2SB1690KT146 ROHM TRANS PNP 12V 2A SOT-346 Original PDF
    2SB1690KT146 ROHM General Purpose Amplification (-12 V, -2 A) Original PDF
    2SB1690TL ROHM TRANS PNP 12V 2A TSMT 3 Original PDF
    2SB1690TL ROHM General Purpose Amplification (-12 V, -2 A) Original PDF
    2SB1691 Renesas Technology Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Original PDF
    2SB1691 Renesas Technology Original PDF
    2SB1691WL Renesas Technology Original PDF
    2SB1693 Panasonic Silicon PNP epitaxial planar type Original PDF

    2SB169 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zDimensions (Units : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original
    PDF 2SB1694 380mV 500mA SC-70 OT-323

    2SB1694

    Abstract: T106
    Text: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original
    PDF 2SB1694 -380mV -500mA -25mA SC-70 OT-323 2SB1694 T106

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor QSZ2 A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package. Dimensions Unit : mm Structure Silicon epitaxial planar transistor QSZ2 (5) (1) 0.3~0.6 0.85 0∼0.1 Applications DC / DC converter Motor driver


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    PDF 2SB1695 2SD2657 R1120A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 Applications Low frequency amplifier Deiver External dimensions (Unit : mm) TSMT3 1.0MAX Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV


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    PDF 2SB1690 180mV

    Untitled

    Abstract: No abstract text available
    Text: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 External dimensions (Unit : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 Features Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions


    Original
    PDF 2SB1697 180mV SC-62 OT-89

    2SB1690

    Abstract: No abstract text available
    Text: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.


    Original
    PDF 2SB1690 -180mV -50mA 2SB1690

    2SB1697

    Abstract: T100
    Text: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 zExternal dimensions (Units : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 zFeatures Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions


    Original
    PDF 2SB1697 -180mV -1A/-50mA) SC-62 OT-89 2SB1697 T100

    2SB1695K

    Abstract: T146
    Text: 2SB1695K Transistors Low frequency amplifier 2SB1695K !External dimensions Units : mm !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) !Application Low frequency amplifier


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    PDF 2SB1695K -370mV -50mA SC-59 OT-346 2SB1695K T146

    2SB1690

    Abstract: No abstract text available
    Text: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 !Applications Low frequency amplifier Deiver !External dimensions (Unit : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 !Features 1) A collector current is large. 2) Collector saturation voltage is low.


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    PDF 2SB1690 -180mV -50mA 2SB1690

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25


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    PDF 2002/95/EC) 2SB1693

    Untitled

    Abstract: No abstract text available
    Text: 2SB1694 2SB1694FRA Datasheet PNP -1A -30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC -30V -1A UMT3 Collector Base Emitter 2SB1694FRA 2SB1694 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose.


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    PDF 2SB1694 2SB1694FRA AEC-Q101 OT-323 SC-70) -380mV -500mA, -25mA

    2SB1690

    Abstract: 3203
    Text: SPICE PARAMETER 2SB1690 by ROHM TR Div. * 2SB1690 PNP BJT model * Date: 2006/12/01 .MODEL 2SB1690 PNP + IS=260.00E-15 + BF=435.07 + VAF=11.229 + IKF=1.2673 + ISE=260.00E-15 + NE=2.0356 + BR=214.53 + VAR=100 + IKR=6.0651E-3 + ISC=464.05E-15 + NC=2.5092 + NK=.20425


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    PDF 2SB1690 Q2SB1690 00E-15 0651E-3 05E-15 000E-3 729E-3 88E-12 2SB1690 3203

    3203

    Abstract: transistor 3203 2SB1697
    Text: SPICE PARAMETER 2SB1697 by ROHM TR Div. * 2SB1697 PNP BJT model * Date: 2006/12/01 .MODEL 2SB1697 PNP + IS=260.00E-15 + BF=435.07 + VAF=11.229 + IKF=1.2673 + ISE=260.00E-15 + NE=2.0356 + BR=214.53 + VAR=100 + IKR=6.0651E-3 + ISC=464.05E-15 + NC=2.5092 + NK=.20425


    Original
    PDF 2SB1697 Q2SB1697 00E-15 0651E-3 05E-15 000E-3 729E-3 88E-12 3203 transistor 3203 2SB1697

    2SB1699

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.5±0.1 1.6±0.2 Unit −60 V VCEO −60 V Emitter-base voltage (Collector open) VEBO −6 V IC −2 A ICP


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    PDF 2002/95/EC) 2SB1699 2SB1699

    Untitled

    Abstract: No abstract text available
    Text: QSZ1 Transistors General purpose transistor QSZ1 A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package. zExternal dimensions Unit : mm zApplications DC / DC converter Motor driver QSZ1 zStructure Silicon epitaxial planar transistor ROHM : TSMT5


    Original
    PDF 2SB1690 2SD2653

    2SB1695

    Abstract: No abstract text available
    Text: 2SB1695 Transistors Low frequency amplifier 2SB1695 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA 2.9 0.85 0.4 0.7 1.6


    Original
    PDF 2SB1695 -370mV -50mA 2SB1695

    2SB1691

    Abstract: 2SD2655 Hitachi DSA0076
    Text: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier ADE-208-1387A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)


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    PDF 2SB1691 ADE-208-1387A 2SD2655 2SB1691 2SD2655 Hitachi DSA0076

    2SB1693

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current


    Original
    PDF 2002/95/EC) 2SB1693 SC-59 2SB1693

    Untitled

    Abstract: No abstract text available
    Text: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 zExternal dimensions (Units : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 zFeatures Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions


    Original
    PDF 2SB1697 -180mV -1A/-50mA) SC-62 OT-89

    Untitled

    Abstract: No abstract text available
    Text: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 !Applications Low frequency amplifier Deiver !External dimensions (Units : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 !Features 1) A collector current is large. 2) Collector saturation voltage is low.


    Original
    PDF 2SB1690 -180mV -50mA 2SB1690 100MHz -20IB2

    Untitled

    Abstract: No abstract text available
    Text: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 1.25 !Features 1) A collector current is large. 2) Collector saturation voltage is low.


    Original
    PDF 2SB1694 -380mV -500mA -25mA SC-70 OT-323

    2SB1698

    Abstract: T100
    Text: 2SB1698 Transistors Low frequency amplifier 2SB1698 zExternal dimensions Units : mm 4.0 2.5 0.5 (1) (2) 0.5 3.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA 0.4 1.5 1.0 1.6 4.5 zApplication Low frequency amplifier


    Original
    PDF 2SB1698 -370mV -50mA SC-62 OT-89 2SB1698 T100

    2SB1694

    Abstract: T106
    Text: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 1.25 !Features 1) A collector current is large. 2) Collector saturation voltage is low.


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    PDF 2SB1694 -380mV -500mA -25mA SC-70 OT-323 2SB1694 T106

    2SB1690

    Abstract: 2SB1690K T146
    Text: 2SB1690K/2SB1690 Transistors General purpose amplification -12V, -2A 2SB1690K/2SB1690 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Deiver 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 ROHM : TSMT3


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    PDF 2SB1690K/2SB1690 2SB1690 2SB1690K 2SB1690 2SB1690K T146