Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 100
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2SD1177
2SB874
O-126
M2000
D-85622
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2SD1177
Abstract: Hitachi DSA00164
Text: 2SD1177 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2 kΩ (Typ) 200 Ω (Typ) 3 2SD1177 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SD1177
2SB874
O-220AB
D-85622
2SD1177
Hitachi DSA00164
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2sb874
Abstract: Hitachi DSA001650
Text: 2SB874 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 1 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO
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2SB874
2SD1177
O-220AB
D-85622
2sb874
Hitachi DSA001650
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2SB874
Abstract: 2SD1177
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB874 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1.5A ·Complement to Type 2SD1177
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2SB874
2SD1177
2SB874
2SD1177
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SD1188
Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150
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2SD1101
2SB831
2SD1102
2SD1103
2SD1104
2SD1105
2SD1106
2SD1107
2SD1108
2SD1109
2SD1188
2SD1144
2SD1170
2SD1184
2SD1116
2SD1156
2SD1182
2SD1123
2SD1131
2SD1146
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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2N640S
Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636
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O-12S
OT-18S
O-202
O-237var
2N640S
B0636
B081S
2SA1241Y
2SA1241-Y
B0378
B0526-5
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Untitled
Abstract: No abstract text available
Text: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline T0-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 2 5 ° C ) Item Symbol Rating Unit Collector to base voltage
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2SB874
2SD1177
T0-220AB
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Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline T O -2 2 0 A B 2 O 1 1. Base 2. Collector Flange 3. Emitter O - —VA— —WV2 k£2 2 0 0 Si (Typ) (Typ) ì\' 2SD1177 Absolute Maximum Ratings (Ta = 25 °C)
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2SD1177
2SB874
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STB60
Abstract: No abstract text available
Text: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25 °C) Item Symbo Rating Unit Collector to base voltage
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2SB874
2SD1177
O-220AB
D-85622
STB60
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2SD1177
Abstract: 2SB874
Text: HITACHI 2SB874-SILICON PNP EPITAXIAL LOW PRiGUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 1. E m itte r 2. C ollector 3. Base D im e nìi« !« in mm 2-3±0,3 (JEDEC TO-126 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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2SB874
2SD1177
O-126
2SB874
2SD1177
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Untitled
Abstract: No abstract text available
Text: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O
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OCR Scan
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2SD1177
2SB874
O-126
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Untitled
Abstract: No abstract text available
Text: 2SB874 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO -220AB 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage
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OCR Scan
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2SB874
2SD1177
-220AB
2SB874
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SB874SILICON PNP EPITAXIAL LOW PREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 Öïf*t I. Ermite* 2 Collecte* 3. B*se {Dimernkjo* in *m»> JEDEC TO-126 MOD. • ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item Collector to base voltage Collector to emitter voltage
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2SB874SILICON
2SD1177
O-126
TCS25-C
2SB874
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2SB897
Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Text: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te
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2SB859
2SB860
2SB861
2SB862
2SB863
2SB855
2SB867
-1320ABJÃ
2SB886
2SB887
2SB897
2SD115
2SB863
2SB889
2sb891
2sd1148
2SD1207
2SB855
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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2SA1301 TOSHIBA
Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207
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2SA1415
2SA1782
2SA1048
2SA1127
SA1299
2SA933S
2SA104S
2SA1337
SA112
2SA1301 TOSHIBA
da 1191
2sa970
Toshiba 2SB754
2SA904A
2SA1038
2Sa1173
2SA1323
2SB646
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2sk408
Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB
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HA21008
HA22012
HA22022
HA22016
MSP-18
HA21001MS
16dBtyp
1SD1133
2SD1134
2SD1135
2sk408
2SK2794
2sk409
2SK1999
ha22002
2SD669A
2SK2595
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PDF
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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