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    2SC1162 MAX FREQUENCY Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd

    2SC1162 MAX FREQUENCY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1162

    Abstract: Hitachi DSA002754
    Text: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage


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    PDF 2SC1162 2SA715 2SC1162 Hitachi DSA002754

    2sc1162

    Abstract: Hitachi DSA00164
    Text: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35


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    PDF 2SC1162 2SA715 O-126 D-85622 2sc1162 Hitachi DSA00164

    2sc1162

    Abstract: 2sc1162 equivalent 2SA715
    Text: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SC1162 O-126 2SA715 2sc1162 2sc1162 equivalent 2SA715

    2sc1162

    Abstract: 2SA715
    Text: JMnic Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SC1162 O-126 2SA715 2sc1162 2SA715

    2sc1162

    Abstract: 2sc1162 equivalent 2SA715 2SC116 2SC1162 max frequency
    Text: SavantIC Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SC1162 O-126 2SA715 2sc1162 2sc1162 equivalent 2SA715 2SC116 2SC1162 max frequency

    2sc1162

    Abstract: 2SA715 DSA003644 Hitachi 2SA
    Text: 2SC1162 Silicon NPN Epitaxial ADE-208-880 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings


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    PDF 2SC1162 ADE-208-880 2SA715 O-126 2sc1162 2SA715 DSA003644 Hitachi 2SA

    2sc1162

    Abstract: Hitachi DSA002787
    Text: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35


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    PDF 2SC1162 2SA715 O-126 D-85622 2sc1162 Hitachi DSA002787

    2sc1162

    Abstract: 2SA715 2SC1162 C Hitachi DSA00384
    Text: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35


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    PDF 2SC1162 2SA715 O-126 2sc1162 2SA715 2SC1162 C Hitachi DSA00384

    transistor C 2290

    Abstract: transistor 2SC1162
    Text: 2SC1162 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECOTR 3.900 4.100 3.000 3. BASE 3.200 3 10.60 0 11.00 0 2 0.000 0.300 1 2.100 2.300 Features 1.170 1.370 Low frequency power amplifier 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF 2SC1162 O-126 O-126 200mA 200mA transistor C 2290 transistor 2SC1162

    to-126 transistor

    Abstract: transistor 2SC1162 2sc1162
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low frequency power amplifier 2. COLLECOTR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF O-126 2SC1162 O-126 200mA to-126 transistor transistor 2SC1162 2sc1162

    2sc1162

    Abstract: transistor 2SC1162 2SC1162C 2SC1162-B 2SC1162-C 2SC1162-D 2SC1162 C
    Text: 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE 1


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    PDF 2SC1162 O-126 2SC1162-B 2SC1162-C 2SC1162-D 200mA 07-Mar-2011 2sc1162 transistor 2SC1162 2SC1162C 2SC1162-B 2SC1162-C 2SC1162-D 2SC1162 C

    transistor 2SC1162

    Abstract: 2SA715 2sc1162
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier


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    PDF 2SA715 2SC1162 -10mA; transistor 2SC1162 2SA715 2sc1162

    transistor 2SC1162

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low Frequency Power Amplifier 2. COLLECOTR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF O-126 2SC1162 O-126 200mA transistor 2SC1162

    2SA715

    Abstract: 2sa715 equivalent 2sc1162
    Text: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SA715 O-126 2SC1162 2SA715 2sa715 equivalent 2sc1162

    2sc1162

    Abstract: 2SA715
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier


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    PDF 2SA715 2SC1162 -10mA; 2sc1162 2SA715

    Hitachi DSA002788

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35


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    PDF 2SA715 2SC1162 O-126 D-85622 Hitachi DSA002788

    2sa715 equivalent

    Abstract: 2sc1162 Hitachi DSA001650
    Text: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35


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    PDF 2SA715 2SC1162 O-126 D-85622 2sa715 equivalent 2sc1162 Hitachi DSA001650

    c1162

    Abstract: 2SC1162
    Text: 2SC1162 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SA715 Outline TO -126 MOD 1. Em itter 2. Collector 3. Base 2 g Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage


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    PDF 2SC1162 2SA715 D-85622 c1162 2SC1162

    C1162

    Abstract: No abstract text available
    Text: 2SC1162 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Em itter 2. Collector 3. Base 2 g Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to base voltage


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    PDF 2SC1162 2SA715 O-126 C1162

    Untitled

    Abstract: No abstract text available
    Text: 2SC1162 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SA715 Outline TO -126 MOD 1. Em itter 2. Collector 3. Base 2 g Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage


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    PDF 2SC1162 2SA715

    2Sa715

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G


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    PDF 2SA715 2SC1162 2SA715

    2SA715

    Abstract: 2SC1162 LE20A
    Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to


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    PDF O-126 2SC1162 2SA715 O-126) LE20A

    Untitled

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O


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    PDF 2SA715 2SC1162 D-85622

    2sk408

    Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
    Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB


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    PDF HA21008 HA22012 HA22022 HA22016 MSP-18 HA21001MS 16dBtyp 1SD1133 2SD1134 2SD1135 2sk408 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595