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    2SC1259 Search Results

    2SC1259 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC1259 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1259 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1259 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1259 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1259 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC1259 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1259 Unknown Transistor Replacements Scan PDF
    2SC1259 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC1259 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original
    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC1259 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.


    Original
    2SC1259 Freq125M Code4-29 PDF

    2SC635

    Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
    Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original
    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC635 MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051 PDF

    2SC2897

    Abstract: 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900
    Text: June 1999 ST CROSS REFERENCE WITH NEC INDUSTRY PART NUMBER 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 2SC2628 2SC2629


    Original
    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC2897 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900 PDF

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original
    2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent PDF

    2SC1202

    Abstract: 2sc1203 2sc1201 2sc1225 2SC1294 2SC1237 2SC1239 2sc1234 2SC1247A 2sc1204
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC1201 2SC1202 2SC1203 2SC1204 2SC1205 30 30 100 100 2SC1206 45 4.5 1.7A 2SC1206A 45 4.5 1.7A 2SC1206B 45 4.5 2A 2SC1207 45 4.5 3A 2SC1207B 45 4 4A 2SC1208 36 5 10A 2SC1208A


    Original
    2SC1201 2SC1202 2SC1203 2SC1204 2SC1205 2SC1206 2SC1206A 2SC1206B 2SC1207 2SC1207B 2SC1202 2sc1203 2sc1201 2sc1225 2SC1294 2SC1237 2SC1239 2sc1234 2SC1247A 2sc1204 PDF

    BLY25

    Abstract: BLY26 CP430 B3631 2SC736 B145013 BUY14 B3547 T0111
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan
    NPN110. 300MS BR101FS MT50a BR200B5 200MS BR201BS BLY25 BLY26 CP430 B3631 2SC736 B145013 BUY14 B3547 T0111 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan
    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    B3597

    Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan
    NPN110. 300MS BR101FS MT50a BR200B5 200MS BR201BS B3597 B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2SC736

    Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan
    NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726 PDF

    oms 450

    Abstract: BLY26 2n1608 BLY25 CP430 B3547 usaf520es070 usaf521es071
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan
    NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 oms 450 BLY26 2n1608 BLY25 CP430 B3547 usaf520es070 usaf521es071 PDF