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    2SC1959 TRANSISTOR Search Results

    2SC1959 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC1959 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1959

    Abstract: 2SA562TM 400 Watt Audio amplifier IC
    Text: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA


    Original     		PDF 2SC1959 2SA562TM. 2SC1959 2SA562TM 400 Watt Audio amplifier IC

    2SC1959

    Abstract: 2SA562TM
    Text: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA


    Original     		PDF 2SC1959 2SA562TM. 2SC1959 2SA562TM

    2SC1959

    Abstract: 2sc1959 transistor
    Text: 2SC1959 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 Tstg: -55℃ to +150℃


    Original     		PDF 2SC1959 100mA 400mA 2SC1959 2sc1959 transistor

    C1959

    Abstract: c1959 transistor 2sc1959 c1959 Y transistor C1959 NPN Transistor 2SC1959Y transistor c1959 2SC1959-GR 2SC1959-Y 400 Watt Audio amplifier IC
    Text: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage


    Original     		PDF 2SC1959-O 2SC1959-Y 2SC1959-GR 400mA 2SA562TM. C1959 C1959 c1959 transistor 2sc1959 c1959 Y transistor C1959 NPN Transistor 2SC1959Y transistor c1959 2SC1959-GR 400 Watt Audio amplifier IC

    C1959

    Abstract: c1959 transistor C1959 NPN Transistor amplifier mcc transistor c1959
    Text: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage


    Original     		PDF 2SC1959-O 2SC1959-Y 2SC1959-GR 400mA 2SA562TM. C1959 C1959 c1959 transistor C1959 NPN Transistor amplifier mcc transistor c1959

    C1959

    Abstract: c1959 transistor transistor c1959 C1959 NPN Transistor 2SC1959Y
    Text: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage


    Original     		PDF 2SC1959-O 2SC1959-Y 2SC1959-GR 400mA 2SA562TM. C1959 C1959 c1959 transistor transistor c1959 C1959 NPN Transistor 2SC1959Y

    C1959

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Audio frequency low power amplifier applications, driver stage


    Original     		PDF 2SC1959-O 2SC1959-Y 2SC1959-GR 400mA 2SA562TM. C1959 C1959

    C1959

    Abstract: 2SC1959 c1959 Y transistor c1959 transistor 2SC1959Y
    Text: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage


    Original     		PDF 2SC1959-O 2SC1959-Y 2SC1959-GR 400mA 2SA562TM. C1959 C1959 2SC1959 c1959 Y transistor c1959 transistor 2SC1959Y

    datasheet 2sc1959

    Abstract: 2SC1959
    Text: DC COMPONENTS CO., LTD. 2SC1959 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base


    Original     		PDF 2SC1959 100mA, 400mA, datasheet 2sc1959 2SC1959

    2SC1959

    Abstract: 2SC1959Y 2SC1959-Y 2sc1959 transistor 2Sc1959 equivalent 2SC1959-0 datasheet 2sc1959 2SC1959-O
    Text: 2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Excellent hFE Linearity  High Transition Frequency TO-92 G H Emitter Collector


    Original     		PDF 2SC1959 2SC1959-O 2SC1959-Y 25Min 40Min 2SC1959-GR 100mA 400mA 24-Feb-2011 2SC1959 2SC1959Y 2SC1959-Y 2sc1959 transistor 2Sc1959 equivalent 2SC1959-0 datasheet 2sc1959 2SC1959-O

    2SA562TM

    Abstract: 2SC1959
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: 2SC1959 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30


    Original     		PDF 2SC1959 400mA 100mA, 100mA 100mA

    2sc1959 transistor

    Abstract: datasheet 2sc1959 2SC1959
    Text: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1959 100mA 400mA 100mA, 2sc1959 transistor datasheet 2sc1959 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1959 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity z High Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S 2SC1959 100mA 400mA 100mA 25Min 40Min

    2sc1959 transistor

    Abstract: 2SC1959
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO:


    Original     		PDF 2SC1959 100mA 400mA 2sc1959 transistor 2SC1959

    2SC1959

    Abstract: No abstract text available
    Text: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1959 100mA 400mA 100mA, 2SC1959

    datasheet 2sc1959

    Abstract: 2SC1959
    Text: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1959 100mA 400mA 100mA, datasheet 2sc1959 2SC1959

    2SC1959

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURES z Excellent hFE linearlity 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC1959 100mA 400mA 100mA, 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TO-92 TRANSISTOR NPN FEATURES z Excellent hFE Linearlity 1.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF 2SC1959 100mA 400mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURES Power amplifier applications 1.EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SC1959 100mA 400mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA


    OCR Scan     		PDF 2SC1959 400mA 2SA562TM.

    2SC1959

    Abstract: 2SA562TM
    Text: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : ^FE (2)-25 (Min.) : Vç;e = 6V, Ic = 400mA


    OCR Scan     		PDF 2SC1959 400mA 2SA562TM. 2SC1959 2SA562TM

    2SC1959

    Abstract: 2SA562TM 2SA56 2.1 5.1 AUDIO SWITCHING IC ALL TYPE
    Text: 2SC1959 TO SH IBA TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS 2SC1959 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • • • . 5.1 MAX. Excellent hjpg Linearity : ^FE (2)-2 5 (Min.) : Vç;e = 6V, Ic = 400mA


    OCR Scan     		PDF 2SC1959 400mA 2SA562TM. 2SC1959 2SA562TM 2SA56 2.1 5.1 AUDIO SWITCHING IC ALL TYPE

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737