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    2SC2001 TRANSISTOR Search Results

    2SC2001 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC2001 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor C2001

    Abstract: c2001 transistor C2001 C2001 npn 2sc2001 transistor 2sc2001
    Text: MCC TM Micro Commercial Components 2SC2001 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001 2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 transistor C2001 c2001 transistor C2001 C2001 npn 2sc2001 transistor 2sc2001 PDF

    2SC2001

    Abstract: 2sc2001 transistor
    Text: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		2SC2001 100mA 700mA, 30MHz 2SC2001 2sc2001 transistor PDF

    transistor C2001

    Abstract: c2001 transistor 2SC200
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 c2001 transistor 2SC200 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 PDF

    transistor C2001

    Abstract: C2001 c2001 transistor 2SC2001K
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 C2001 c2001 transistor 2SC2001K PDF

    transistor C2001

    Abstract: c2001 transistor C2001 C2001 npn 2SC2001 2SC2001L 2SC2001K
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 c2001 transistor C2001 C2001 npn 2SC2001 2SC2001L 2SC2001K PDF

    transistor C2001

    Abstract: 2SC2001K c2001 transistor 2sc2001
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 2SC2001K c2001 transistor 2sc2001 PDF

    transistor C2001

    Abstract: c2001 transistor
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 c2001 transistor PDF

    2SC2001

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83)


    Original     		2SC2001 700mA, 100mA, 2SC2001 PDF

    2SC2001

    Abstract: 2sc2001 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR


    Original     		2SC2001 100mA 700mA, 30MHz 2SC2001 2sc2001 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V BR CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		2SC2001 30MHz 270TYP 050TYP PDF

    2SC2001

    Abstract: transistor 2sc2001
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2001 100mA 700mA 700mA, 2SC2001 transistor 2sc2001 PDF

    2SC2001

    Abstract: No abstract text available
    Text: 2SC2001 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol


    Original     		2SC2001 100mA) 700mA) 100mA 700mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2001 100mA 700mA 700mA, PDF

    2SC2001

    Abstract: No abstract text available
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2001 100mA 700mA 700mA, 2SC2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2001 100mA 700mA 700mA, PDF

    2SC2001

    Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
    Text: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High hFE and low VCE sat hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G


    Original     		2SC2001 100mA 700mA 2SC2001-M 2SC2001-L 2SC2001-K 700mA, 17-Feb-2011 100mA 2SC2001 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K PDF

    2SC2001

    Abstract: No abstract text available
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2001 100mA 700mA 700mA, 2SC2001 PDF

    2SC2001

    Abstract: No abstract text available
    Text: 2SC2001 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		2SC2001 -55OC 100mAdc, 700mAdc, 70mAdc) 10mAdc, 30MHz) 2SC2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC2001 TRANSISTOR NPN 1. EMITTER FEATURES z High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)


    Original     		2SC2001 100mA) 700mA) 100mA 700mA, 30MHz PDF

    2SC2001

    Abstract: PT-600
    Text: Transistors 2SC2001 USHA INDIA LTD


    OCR Scan     		2SC2001 -55M50 2SC2001 PT-600 PDF

    transistor 2sc2001

    Abstract: 2SC2001
    Text: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica­ tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat


    OCR Scan     		2SC2001 2SC2001 transistor 2sc2001 PDF

    tl700

    Abstract: 2SC2001 transistor 2sc2001
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.


    OCR Scan     		2SC2001 2SC2001 tl700 transistor 2sc2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: fr P 2SC2001 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISSIPATION PT=600mW * Complement To 2SA952 * High Hfe And Low Vcesat * Collector-Base Voltage VCBO=30V


    OCR Scan     		2SC2001 600mW) 2SA952 100mA 700mA 700mA ItH70mA PDF