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    2SC218 Search Results

    2SC218 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC218 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC218 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC218 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC218 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC218 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC218 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC218 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC218 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC218 Unknown Cross Reference Datasheet Scan PDF
    2SC218 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2180 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2180 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2180 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2180 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2180 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2180 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2180 Toshiba Japanese Transistor Data Book Scan PDF
    2SC2181 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2181 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2SC218 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2189

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2189 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For high speed switching and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base


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    2SC2189 2SC2189 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 0.45±0.05 0.55±0.1 Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage


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    2SC2188 PDF

    2sc2188

    Abstract: No abstract text available
    Text: Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as


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    2SC2188 2sc2188 PDF

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 PDF

    2SC2189

    Abstract: No abstract text available
    Text: 2SC2189 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING NPN三重拡散プレーナ形 高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 :Features 特長: 高速 スイッチング High speed switching


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    2SC2189 2SC2189 PDF

    NPN transistor collector base and emitter

    Abstract: 2SC2189
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and power amplifier


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    2SC2189 NPN transistor collector base and emitter 2SC2189 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2183 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    2SC2183 PDF

    2sc2188

    Abstract: No abstract text available
    Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open)


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    2SC2188 2sc2188 PDF

    2sc2188

    Abstract: No abstract text available
    Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 1.0 (1.0) (1.5) R 0.9 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE


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    2SC2188 2sc2188 PDF

    2sc2188

    Abstract: No abstract text available
    Text: Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as


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    2SC2188 2sc2188 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2189 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    2SC2189 PDF

    2SC635

    Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
    Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC635 MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051 PDF

    2SC2897

    Abstract: 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900
    Text: June 1999 ST CROSS REFERENCE WITH NEC INDUSTRY PART NUMBER 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 2SC2628 2SC2629


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    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC2897 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900 PDF

    2sc2188

    Abstract: No abstract text available
    Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 Emitter-base voltage Collector open Collector current Collector power dissipation Junction temperature Storage temperature 4.5±0.1


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    2SC2188 2sc2188 PDF

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} P' . — — ~5b D0074Tfl 3 DE I ^ O T V E S O — 9097250 TOSHIBA CDIS C R E T E / O P T O 5 òC D Y - 3 3-/3 07^98 2SC2181 SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 2 -0 3 .8 ± a 1


    OCR Scan
    D0074Tfl 2SC2181 175MHz, 175MHz PDF

    2sc2888

    Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
    Text: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —


    OCR Scan
    2SC740 2SC741 2SC742 2SC743 2SC745 2SC746 2SC748 2SC387A 2SC998 2SC549 2sc2888 2SC2926 2SC2166 2sc1047 2sc1907 2SD1270 2Sd917 2SC787 2sc2314 PDF

    2sc2915 hitachi

    Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
    Text: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514


    OCR Scan
    2SC2102 2SC2281 2SC2282 2SC2103 2SC3008-KA 2SC2181 2SC2917 2sc2915 hitachi 2Sc515a 2SC2611 2SC1515 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762 PDF

    2SC2181

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2181 Unit in m m VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : 2-iZ>2,2±0. Output Power : f=175MHz, Po=40W (Min. V C C =13,5V, P-^lOW ) 100% Te st ed fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e Angles with


    OCR Scan
    2SC2181 175MHz, Pi-10W, 175MHz 255MHz, 2SC2181 PDF

    2SC2181

    Abstract: 10ID cdi ic cdi unit
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ~5b BE I^ D^ VE SO □ □□74‘ìfl 3 | 5 òC CDI S C R E T E /O P T O “Ú 7 4-9 8 D 7 "- -J3-/3 2SC2181 SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : .


    OCR Scan
    2SC2181 175MHz, 175MHz II11II1IIIIIIIIII 2SC2181 10ID cdi ic cdi unit PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan
    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan
    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N PDF

    transistor m6e

    Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
    Text: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.


    OCR Scan
    0D01b03 1SI50A-050 2SC3047 T0-220AB 2SC3549 2SC3551 1SI10A-100 2SD847 2SD1157 transistor m6e ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050 PDF

    tt 2144

    Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
    Text: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381


    OCR Scan
    2SC1947 2SC1965 2SC2078 2SB858 2SD734 2SC2001 2SD467 2SC1383 2SC3580 2SC3377 tt 2144 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947 PDF