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    2SC2859 Search Results

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    2SC2859 Price and Stock

    Micro Commercial Components 2SC2859-O-TP

    TRANS NPN 30V 0.5A SOT23
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    Micro Commercial Components 2SC2859-Y-TP

    Interface
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    Mouser Electronics 2SC2859-Y-TP
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    Micro Commercial Components 2SC2859-GR-TP

    TRANS NPN 30V 0.5A SOT23
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    Toshiba America Electronic Components 2SC2859-GR(TE85L,F

    TRANS NPN 30V 0.5A SMINI
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    2SC2859-GR(TE85L,F Digi-Reel 1
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    Toshiba America Electronic Components 2SC2859-O(TE85L,F)

    TRANS NPN 30V 0.5A SMINI
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    2SC2859 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2859 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SC2859 Kexin Silicon NPN Epitaxial Original PDF
    2SC2859 Toshiba Japanese - Transistors Original PDF
    2SC2859 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2859 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2859 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2859 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2859 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2859 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2859 Toshiba SILICON NPN EPITAXIAL (PCT PROCES) Scan PDF
    2SC2859 Toshiba Silicon NPN transistor for audio frequency low power amplifier and driver stage amplifier applications switching applications Scan PDF
    2SC2859 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SC2859-GR Toshiba 2SC2859 - TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2859GR Toshiba Silicon PNP Epitaxial Planar Transistor Scan PDF
    2SC2859GRTE85L Toshiba 2SC2859 - TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SC2859-GR(TE85L,F Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN NPN 30V 0.5A S-MINI Original PDF
    2SC2859GRTE85R Toshiba 2SC2859 - TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SC2859-GR-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SC2859-O Toshiba 2SC2859 - TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2859-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC2859 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 2SC2859 100mA 400mA 100mA, 25Min 40Min 70Min

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182.

    2SA1182

    Abstract: 2SC2859
    Text: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC2859.


    Original     		PDF 2SA1182 2SC2859. 2SA1182 2SC2859

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o 2.4 1.3 0.4 0.95 0.95 2.9 1.9 Collector Dissipation:Pc=225mW Tc=25 C


    Original     		PDF 2SC2859LT1 OT-23 2SA1298LT1 500mA 225mW 500mA, 300uS

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : • Complementary to 2SA1182. Unit: mm hFE (2) = 25 (min)


    Original     		PDF 2SC2859 2SA1182.

    Oo25

    Abstract: 2SA1182 2SC2859
    Text: 2SC2859 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2859 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 直流電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182 O-236MOD SC-59 Oo25 2SA1182 2SC2859

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4


    Original     		PDF 2SC2859LT1 OT-23 2SA1298LT1 500mA 225mW 500mA, 300uS

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182. O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : IC = 400 mA) • Complementary to 2SA1182. Unit: mm


    Original     		PDF 2SC2859 2SA1182.

    transistor marking WY

    Abstract: 2SC2859 WY transistor sot23 WY .wy transistor marking wo sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SC2859 Pb Lead-free z Power dissipation：PC=150mW. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2859


    Original     		PDF 2SC2859 150mW. OT-23 BL/SSSTC100 transistor marking WY 2SC2859 WY transistor sot23 WY .wy transistor marking wo sot-23

    marking wg

    Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC2859 OT-23 100mA 400mA marking wg WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy

    2SA1182

    Abstract: 2SC2859
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182. 2SA1182 2SC2859

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)100m


    Original     		PDF 2SC2859 Freq200M

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2859 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS. U n it in m m DRIVER STAGE AM PLIFIER APPLICATIONS. + 0.5 - 0.3 + 0.25 . 1.5 - 0.15 SW ITCH IN G APPLICATIONS. • • 25 Excellent hpE Linearity : hFE 2 = 25(Min.) (V qe = 6V, Ic = 400mA)


    OCR Scan     		PDF 2SC2859 400mA) 2SA1182. 100mA 400mA 100mA, 25Min. 40Min. 70Min.

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2859 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • £.5 0.5 0.3 + 0.85 1 . 5 - 0.1 5 Excellent hpg Linearity


    OCR Scan     		PDF 2SC2859 400mA) 2SA1182. O-236MOD SC-59

    2SA1182

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2859 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. + 0 .5 2 .5 -0 .3 SW ITCHING APPLICATIONS. • Excellent hjnE Linearity : hFE (2) = 25(Min.) (VCE = 6V, IC = 400mA)


    OCR Scan     		PDF 2sc2859 400mA) 2SA1182. 961001EAA2' 2SA1182

    marking IAY

    Abstract: 2SA1182 2SC2859
    Text: TO SH IBA 2SC2859 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • 2.5 + — 0.5 0.3 Excellent hjpg Linearity : hFE (2) = 25(Min.) (VCE = 6V, Ic = 400mA)


    OCR Scan     		PDF 2SC2859 400mA) 2SA1182. marking IAY 2SA1182 2SC2859

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2859 TOSHIBA TRANSISTOR 7 SILICON NPN EPITAXIAL PCT PROCESS < ;r iS K Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. + 0.5 3.5-as SWITCHING APPLICATIONS. •i a ii5 • 1 . 0 - 0.15 Excellent hjrE Linearity


    OCR Scan     		PDF 2SC2859 2SA1182. O-236MOD SC-59 961001E

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan     		PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA


    OCR Scan     		PDF 2SA1182 400mA 2SC2859.

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C