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    2SC3328 TRANSISTOR Search Results

    2SC3328 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC3328 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c3328

    Abstract: C3328 NPN Transistor 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 c3328 C3328 NPN Transistor 2SC3328 2SA1315 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 O-92MOD C3328 NPN Transistor c3328 2SC3328 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 2SA1315 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 transistor 2Sa1315 2sc3328 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3328 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC3328 Freq100M PDF

    Transistor A1315

    Abstract: A1315 transistor 2Sa1315 A1315 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 transistor 2Sa1315 A1315 2SC3328 PDF

    Transistor A1315

    Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328 PDF

    Transistor A1315

    Abstract: 2sa1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 O-92MOD Transistor A1315 2sa1315 PDF

    Transistor A1315

    Abstract: 2SA1315 A1315 transistor 2SC3328 A1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 2SA1315 A1315 transistor 2SC3328 A1315 PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    2SC3328

    Abstract: 3AAG 2SC332 2SA1315 2SC3328 transistor
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage • VCE ( s a t ) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC3328 2SA1315 75MAX O-92MOD Junc-01 2SC3328 3AAG 2SC332 2SA1315 2SC3328 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage VCE = 0.5V (Max.) (IC = 1A) • High Speed Switching Time : tstg= 1.0/iS (Typ.)


    OCR Scan     		2SC3328 2SA1315 PDF

    2SC3328

    Abstract: 2SA1315
    Text: TO SH IBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage • VCE (sat) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC3328 2SA1315 75MAX O-92MOD 2SC3328 2SA1315 PDF

    2SC3328

    Abstract: 2SA1315 2SC3328 transistor
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 IN D USTRIA L APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 -5 V (M a x .) (IC = 1 A ) •


    OCR Scan     		2SC3328 2SA1315 O-92MOD 2SC3328 2SA1315 2SC3328 transistor PDF

    2SC3328 transistor

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 , 5 V (Max,) (IC = 1 A ) • High Speed Switching Time : t^tg —1.0/*s (Typ.)


    OCR Scan     		2SC3328 2SA1315 2SC3328 transistor PDF

    TO-3P

    Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
    Text: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold


    OCR Scan     		2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 O-126 O-220AB T0-220 TO-3P 2SC3303 2sc3783 2sc2562 2sa1329 2sd717 2sc2655 2sb754 PDF

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225 PDF

    2SA1315

    Abstract: 2SC3328 A131 TT31
    Text: 2SA1315 TOSHIBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )


    OCR Scan     		2SA1315 2SC3328 961001EAA2 2SA1315 A131 TT31 PDF

    C2804

    Abstract: Transistor A131 2SA1315 2SC3328 A131 TT31
    Text: 2SA1315 TO SH IBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 3 1 5 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 5.1 MAX. • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A) • High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1315 2SC3328 O-92MOD C2804 Transistor A131 2SA1315 2SC3328 A131 TT31 PDF

    2SA1315

    Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
    Text: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)


    OCR Scan     		2SA1315 2SC3328 2SA1315 2SC3328 A131 C2804 TRANSISTOR 2sa1315 PDF

    SA1315

    Abstract: 2SA1315 2SC3328 A131
    Text: TOSHIBA 2SA1315 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 315 IN D USTRIA L APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )


    OCR Scan     		2SA1315 2SC3328 SA1315 SA1315 2SA1315 2SC3328 A131 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1315 2 S A 1 315 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )


    OCR Scan     		2SA1315 2SC3328 PDF

    2SA1315

    Abstract: No abstract text available
    Text: 2SA1315 TOSHIBA TOSHIBA TRANSISTOR K SILICON PNP EPITAXIAL TYPE PCT PROCESS mm Am m 1 3 1 5 • v ■ v INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : V m ?r*^ = - 0.5V (Max. Win = - l A )


    OCR Scan     		2SA1315 2SC3328 2SA1315 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF