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    2SC349 Search Results

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    2SC349 Price and Stock

    Rochester Electronics LLC 2SC3495-AA

    NPN SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3495-AA Bulk 1,480
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    Aptina Imaging 2SC3495-AA

    2SC3495-AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC3495-AA 18,111 1,810
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    onsemi 2SC3495-AA

    2SC3495 - NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC3495-AA 18,111 1
    • 1 $0.195
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    • 1000 $0.1658
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    SANYO Semiconductor Co Ltd 2SC3495-AA

    2SC3495 - NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC3495-AA 52,500 1
    • 1 $0.195
    • 10 $0.195
    • 100 $0.1833
    • 1000 $0.1658
    • 10000 $0.1658
    		Buy Now

    2SC349 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC349 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC349 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC349 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC349 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC349 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC349 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC3490 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3490 Unknown Cross Reference Datasheet Scan PDF
    2SC3490 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3490 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3491 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3491 Unknown Cross Reference Datasheet Scan PDF
    2SC3491 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3491 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3492 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3492 Unknown Cross Reference Datasheet Scan PDF
    2SC3492 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3492 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3493 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3493 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SC349 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3496

    Abstract: 2SC3496A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 6.0±0.2 1.0±0.1 2SC3496 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V


    Original     		PDF 2002/95/EC) 2SC3496, 2SC3496A 2SC3496 2SC3496 2SC3496A

    2SC3495

    Abstract: ITR05631 ITR05632 ITR05633 ITR05634 ITR05635 ITR05636 A 14U
    Text: Ordering number:ENN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.


    Original     		PDF ENN1430B 2SC3495 2SC3495] VCEO100V) VEBO15V) 2SC3495 ITR05631 ITR05632 ITR05633 ITR05634 ITR05635 ITR05636 A 14U

    VEBO-15V

    Abstract: 2SC3495
    Text: Ordering number:EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.


    Original     		PDF EN1430B 2SC3495 2SC3495] VCEO100V) VEBO15V) SC-43 VEBO-15V 2SC3495

    Untitled

    Abstract: No abstract text available
    Text: 2SC3496 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)200m


    Original     		PDF 2SC3496

    2SC3496A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Triple Diffused Transistor 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SC3496A O-252 2SC3496A

    Hitachi DSA002755

    Abstract: No abstract text available
    Text: 2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current


    Original     		PDF 2SC3494 Hitachi DSA002755

    Untitled

    Abstract: No abstract text available
    Text: 2SC3495 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)10m


    Original     		PDF 2SC3495 Freq170MÃ

    2SC3496

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V 2SC3496 1 000 2SC3496A


    Original     		PDF 2002/95/EC) 2SC3496, 2SC3496A 2SC3496

    2SC3496

    Abstract: 2SC3496A
    Text: Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage Emitter open Rating Unit VCBO 900 V 2SC3496 2SC3496A 1 000 900 VCES V Collector-emitter voltage 2SC3496 (Base open)


    Original     		PDF 2SC3496, 2SC3496A 2SC3496 2SC3496 2SC3496A

    2SC3494

    Abstract: 2SC460 Hitachi DSA00233
    Text: 2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO


    Original     		PDF 2SC3494 2SC3494 2SC460 Hitachi DSA00233

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2SC3496A O-252

    Untitled

    Abstract: No abstract text available
    Text: 2SC3494 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC3494

    1032B

    Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
    Text: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD


    OCR Scan     		PDF 2SD1011 2SD1012 2SD1017 2SD1018 2SD1020 2SD1021 2SD1022 2SC3622 2SC3069 2SC3495 1032B 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2SB1012

    2SC3496

    Abstract: 2SC3496A
    Text: Power Transistors 2SC3496, 2SC3496A 2SC3496, 2SC3496A Silicon PNP Triple-Diffused Planar Type Power Switching • Package Dimensions . . ■ Features ' • High speed switching ■ • High collector-base voltage V c bo • Good linearity of DC cu rren t gain (hFE)


    OCR Scan     		PDF 2SC3496, 2SC3496A 2SC3496 0D1L431 2SC3496A

    2SC3500

    Abstract: 2SC3493 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495 2SC3494
    Text: - 160 - Ta=25°C. *EP(ÌTc=25‘ C m % t± £ m 2SC3493 B \L VHF A/TV VHF 2SC3494 B ÌL FM RF/IF A 2SC3495 ìé LF A M Vc b o VcEO ICCDC) Pc Pc* IcBO (V) (V) (A) (W) (W) (/¿A) 15 12 % ft 4# ti (Ta=25tC ) [*EP(Ìtyp hp *CB (V) 0.02 0.15 0. 3 12 \ ni aA/


    OCR Scan     		PDF 2SC3493 2SC3494 2SC3495 2SC3496 2SC3496A 2SC3500O) 800MHz 2SC3501 2SA1383 O-220ABffi 2SC3500 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495

    2SC3498

    Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
    Text: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436


    OCR Scan     		PDF 2SC3432 2SC3433 2SC3434 2SC3435 2SC3436 2SC3437 2SC3438 2SC3439 2SC3440 2SC3441 2SC3498 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295

    2SC3496

    Abstract: 2SC3496A 1SC34
    Text: ower Transistors 2SC3496, 2SC3496A ISC3496, 2SC3496A iliçon PNP Triple-Diffused Planar Type Package Dimensions p er Switching U n it : Features High speed switching 8 .7 m ax. High collecto r-b ase v o lta g e V cbo 6 .5 m ax. fjood linearity of DC current gain


    OCR Scan     		PDF 2SC3496, 2SC3496A 1SC3496, 2SC3496 2SC3496A 1SC34

    2SC3494

    Abstract: 2ma00
    Text: HITACHI 2SC3494 SILIC O N NPN EPäTAXIAL PLA N A R 4.2M*Ï_ PM RF/IF A M P LIFIE R m u n .ÍL41Í-1 1 Kir.:i« 2. Collcm 3. Kt>c I [>. »>!•' i t i r r r tj S P A K M AXIMUM C O L L E C T O R D ISSIPA T IO N CURVE I A B S O L U T E MAXIMUM R A T IN G S (Tu=25*C)


    OCR Scan     		PDF 2SC3494 Ta-25CC) 100MHz 2SC46Q. 2SC3494 2ma00

    rf if amplifier

    Abstract: No abstract text available
    Text: 2SC3494 Silicon NPN Epitaxial Planar HITACHI Application FM RF/IF amplifier Outline SPAK ! •I 23 490 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 30 V Collector to emitter voltage


    OCR Scan     		PDF 2SC3494 2SC3494 rf if amplifier

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC3494 — SILICON NPN EPITAXIAL PLANAR fM ÍVFfiF AM PLIFIER U lf: c h u c u a 1 SPAK I A B SO LU T E MAXIMUM RATINGS <Ta»2S*Cj twm MAXIMUM COLLECTO R DISSIPATION C URVE SC i V :Syttslv! U p.« I V i wj u Coücciof to immer völlige 1 Veto 3U


    OCR Scan     		PDF 2SC3494 2SC460.

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2SA169

    Abstract: 2SC4390 2sc4705 2SC5155
    Text: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s


    OCR Scan     		PDF 2SC4909 250mm 2SA1687 2SC4446 2SC4694 2SA125: 2SC3134 2SC469ti 2SC313Í 2SA169 2SC4390 2sc4705 2SC5155

    2SB1632

    Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)


    OCR Scan     		PDF r0-220 -220F O-220E O-220D 2sd1274Ã 2sd1680* 2sc4986 2SC3403 2SC3825 2SC2841 2SB1632 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3527 2SC3528