2SC3807 POWER TRANSISTOR Search Results

2SC3807 POWER TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2SC3807 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2sc3807 Abstract: 2SC3807 equivalent 2Sc3807 power transistor transistor 2SC3807 IB-20mA 2sC3807 transistor datasheet 2sC3807 transistor 2SC380 Text: 2SC3807 2SC3807 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 2 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃	Original	PDF	2SC3807 O-126C 500mA 2sc3807 2SC3807 equivalent 2Sc3807 power transistor transistor 2SC3807 IB-20mA 2sC3807 transistor datasheet 2sC3807 transistor 2SC380
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 2SC3807 TRANSISTOR NPN FEATURES z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage	Original	PDF	O-126 O-126 2SC3807
2sc3807 Abstract: 2SC3807 equivalent transistor 2SC3807 IB-20mA Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current 2 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range	Original	PDF	O-126C 2SC3807 O-126C 500mA 2sc3807 2SC3807 equivalent transistor 2SC3807 IB-20mA
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range	Original	PDF	O-126C 2SC3807 O-126C 500mA
2sc3807 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR NPN TO – 126C FEATURES z Large Current Capacity z High DC Current Gain z Low Collector-Emitter Saturation Voltage 1. EMITTER 2. COLLECTOR 3. BASE	Original	PDF	O-126C 2SC3807 2sc3807
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	PDF	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
STK412-750 Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870 Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc	Original	PDF	SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	PDF	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
audio amplifier POWER TRANSISTORS Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier Text: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O >FE # Vce te I te hfE I Vce (mA) (V)	OCR Scan	PDF	2SB632K T0126 2SD612K 2SA1692* 2SC3807 2SC3808 2SB511 2SD325 2SB514 audio amplifier POWER TRANSISTORS 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SK1840 audio power amplifier
TO-32-070 Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)	OCR Scan	PDF	T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124