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    2SC382 Price and Stock

    Amphenol Aerospace JT06A-22-2SC(382)

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    Amphenol Aerospace JT07C-22-2SC(382)

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    Amphenol Aerospace JT07A-22-2SC(382)

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    Amphenol Aerospace JT06A-18-32SC(382)

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    Amphenol Aerospace JT00RE-20-2SC(382)

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    2SC382 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC382 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC382 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC382 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC382 Unknown Vintage Transistor Datasheets Scan PDF
    2SC382 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC382 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC382 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC382 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC382 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC382 Unknown Cross Reference Datasheet Scan PDF
    2SC382 Toshiba Japanese Transistor Data Book Scan PDF
    2SC3820 Sanyo Semiconductor High-gain, muting circuit Original PDF
    2SC3820 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3820 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3820 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3820 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3820 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3820 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3821 Fuji Electric V(cbo): 450V V(ceo): 400V V(ceo): 400V 5A 40W mold type high speed switching bipolar transistor Scan PDF
    2SC3821 Fuji Electric High Voltage, High Speed Switching Scan PDF

    2SC382 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3822

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3822 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·For power switching ,power amplifier, power driver and electronic supply applications PINNING PIN


    Original     		PDF 2SC3822 O-220Fa 2SC3822

    2SC3829

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3


    Original     		PDF 2002/95/EC) 2SC3829 S21e2 2SC3829

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3


    Original     		PDF 2002/95/EC) 2SC3829 S21e2

    2SC3829

    Abstract: 800mhz transistor
    Text: Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current


    Original     		PDF 2SC3829 2SC3829 800mhz transistor

    2SC3829

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2


    Original     		PDF 2002/95/EC) 2SC3829 S21e2 2SC3829

    2SC3824

    Abstract: 2SC3824A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.2 (1.0)


    Original     		PDF 2002/95/EC) 2SC3824, 2SC3824A 2SC3824 2SC3824A

    2SC3824

    Abstract: 2SC3824A
    Text: Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High-speed switching • High collector-base voltage (Emitter open) VCBO


    Original     		PDF 2SC3824, 2SC3824A 2SC3824 2SC3824 2SC3824A

    2SC3821

    Abstract: No abstract text available
    Text: 2SC3821 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 ：Features 特長： 高耐圧、


    Original     		PDF 2SC3821 O-220F17 SC-67 2SC3821

    10 ghz transistor

    Abstract: 2SC3829
    Text: Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current


    Original     		PDF 2SC3829 10 ghz transistor 2SC3829

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) 2SC3829

    2SC3829

    Abstract: No abstract text available
    Text: Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low noise figure NF • High gain • High forward transfer gain S21e2


    Original     		PDF 2SC3829 S21e2 2SC3829

    Untitled

    Abstract: No abstract text available
    Text: 2SC3822 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC3822

    2sc945l

    Abstract: NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 .65 70 200M 200M 200M 200M 200M 200M 200M 200M 200M 200M ~anyo ~Iect 2SC3331T 2SC3330U 2SC3331U 2SC2320L 2SC3330V 2SC3689 2SC3820 2SC3615M 2SC3615L Sanyo Elect Sanyo Elect Sanyo Elect


    Original     		PDF 2SC3330R 2SC3331R 2SC372G BCY86 2SC3330S 2SC3331S 2SC2320 2S0874A 2S0973A 2SC733G 2sc945l NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K

    2SC3822

    Abstract: No abstract text available
    Text: 2SC3822 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 ：Features 特長： 高耐圧、


    Original     		PDF 2SC3822 O-220F17 SC-67 2SC3822

    2SC3825

    Abstract: No abstract text available
    Text: Power Transistors 2SC3825 2SC3825 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mm • Features I o • High speed switching 3.7max. 7.3max. 0.9 ± 0.1I 0.5max • Low collector-em itter saturation voltage V ce (sau


    OCR Scan     		PDF 2SC3825 H-150 50/60H 2SC3825

    2SC3825

    Abstract: LE301 50x50X2mm
    Text: Power Transistors 1^32352 ooibmn 2SC3825 bti 2SC3825 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching • Features • High speed switching • Low collector-em itter saturation voltage Vce (saw • “I Type” package configuration with a cooling fin for direct soldering


    OCR Scan     		PDF 32aS2 2SC3825 50x50x2mm 2SC3825 LE301

    2SC3827

    Abstract: marking t54 S2LB
    Text: SILICON TRANSISTOR 2SC3827 UHF OSILLATOR NPN SILICON EPITAXIAL TRANSISTOR " M IN I M O L D " DESCRIPTION PACKAGE DIMENSIONS The 2SC3827 is an NPN silicon epitaxial transistor intended fo r use as in m illim e ter* UHF oscillator in a tuner o f a TV receiver.


    OCR Scan     		PDF 2SC3827 2SC3827 marking t54 S2LB

    2SK1605

    Abstract: No abstract text available
    Text: Application Block Diagrams • V id e o A pplications ß Liquid Crystal Display TV Fluorescent light inverter circuit 2SK1605/2SC4559/2SC3824) 9 EVF/VPS (Color Liquid Crystal Panel Product Kits) R,G,B R.G.B -2 7 - Panasonic


    OCR Scan     		PDF 2SK1605/2SC4559/2SC3824) 2SK1605

    2SC3828

    Abstract: marking HB TV power transistor
    Text: TOSHIBA 2SC3828 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE 7 < ; r Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS. +ag SÌ9-Q 3 • • • Low Noise Figure : NF = 3.5dB Typ. High Power Gain : Gpb = 17dB (Typ.) Excellent Forward AGC Characteristics . Q 65


    OCR Scan     		PDF 2SC3828 --Q15 Ta-25 nA000 2SC3828 marking HB TV power transistor

    Untitled

    Abstract: No abstract text available
    Text: Pow er T ransistors 2SC3824, 2SC3824A 2SC3824, 2SC3824A Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching ■ Features • High s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e V c bo


    OCR Scan     		PDF 2SC3824, 2SC3824A 2SC3824

    2SC3825

    Abstract: pnp 500v
    Text: Power Transistors tT 3 2 a S 2 O G ltH flT 2SC3825 3T1 2SC3825 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a k d o w n V o lta g e , High S p e e d Switchin g U nit 1 mm • F e a tu r e s • High speed switching • Low collector-emitter saturation voltage V c e <sau


    OCR Scan     		PDF t132aS2 2SC3825 bT32aSS 2SC3825 pnp 500v

    t930

    Abstract: 2SC3822 T151
    Text: 2SC3822 N P N = Bi ! £1t f r : 7V— TRI PLE D IFFU SED PLANER TYPE *M I±, HIGH VOLTAGE, HIGH SPEED SWITCHING % Outline Drawings : Features •S U E , • H i g h voltage, high speed switching High reliability : Applications • Switching regulators 9 • D C-D CUW < -*


    OCR Scan     		PDF SC-67 095t/R89 Shl50 t930 2SC3822 T151

    2SC3820

    Abstract: VEBO-15V Vebo 15V
    Text: Ordering number: EN 2544B 1 N0.2544B _ 2SC3820 NPN Epitaxial Planar Type Silicon Transistor High hpE? AF Amp Applications Applications •Drivers, muting circuits Features • Adoption of FBET and MBIT processes • High DC current gain hpE = 800 to 3200


    OCR Scan     		PDF 2544B 2544B 2SC3820 25M-3/3 VEBO-15V Vebo 15V

    2SC3828

    Abstract: No abstract text available
    Text: 2SC3828 SILICON NPN PLANAR TYPE UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Low Noise Figure : NF= 3 .5dB Typ. . High Power Gain : Gpb=17dB(Typ.) . Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta-25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC3828 Ta-25 2SC3828