Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
|
Original
|
RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
|
PDF
|
2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
|
Original
|
BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
2SC4707
300mA)
2SA1811
100mA
300mA
300mA,
|
PDF
|
2sc4707
Abstract: 2SA1811
Text: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity ; 11F E 2 - ° U uvun.;, • , ± (J — O U U I I 1 . Í V
|
OCR Scan
|
2SC4707
300mA)
2SA1811
75MAX
O-92Mtruments,
2sc4707
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1811 T O SH IB A 2 S A 1 811 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpg Linearity : h p E 2 = 35(M in.), ( V q r = Complementary to 2SC4707
|
OCR Scan
|
2SA1811
-300mA)
2SC4707
L/1V11
O-92MOD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON IMPN EPITAXIAL TYPE mm • m m w LOW FREQUENCY AMPLIFIER APPLICATIONS. U nit in mm 5/1M A X DRIVER STAGE AMPLIFIER APPLICATIONS. • 8 .2 M A X . SWITCHING APPLICATIONS. Ex cellen t hjrg L in e a rity : hF E 2 = 35 (M in .), (V c
|
OCR Scan
|
2SC4707
300mA)
2SA1811
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity . oer ; 11F E 2 — o u • /iv/r* UV11I1.;,
|
OCR Scan
|
2SC4707
UV11I1.
2SA1811
|
PDF
|
2SA1811
Abstract: 2SC4707
Text: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. SWITCHING APPLICATIONS. • • Excellent hjpg Linearity : hKE 2 -35 (Min.), (Vç;e = 2V, Iç;= 300mA)
|
OCR Scan
|
2SC4707
300mA)
2SA1811
75MAX
O-92MOD
2SA1811
2SC4707
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5 .1 M A X . DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpE Linearity : hFE 2 = 35 (Min.), ( V C = 2V, IC = 300mA)
|
OCR Scan
|
2SC4707
300mA)
2SA1811
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 S A 1811 SILICON PNP EPITAXIAL TYPE Unit in mm LO W FREQ U EN CY AM PLIFIER APPLICATIO N S. DRIVER STA G E A M PLIFIER A PPLICA TIO N S. 5.1 MAX SW ITCHING A PPLICA TIO N S. • • Excellent hpE Linearity : hFE 2 = 35 (M in.), (V c e =:-2 V , I c = —300mA)
|
OCR Scan
|
2SA1811
--300mA)
2SC4707
O-92MOD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1811 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. SW ITCHING APPLICATIONS. Excellent hEE Linearity : hFE 2 = 35 (M in.), (VCE= -2 V , IC = -300m A )
|
OCR Scan
|
2SA1811
-300m
2SC4707
75MAX
|
PDF
|
15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
|
OCR Scan
|
2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
|
PDF
|
2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
|
OCR Scan
|
2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
|
PDF
|
2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
|
OCR Scan
|
T258-OMI
FAX06
2SC144
2SD466
2sc5266
|
PDF
|
|
|
2SA1811
Abstract: 2SC4707 S-25
Text: 2SA1811 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • Unit in mm 5.1 M AX Excellent hpE Linearity : hpE 2 = 35 (Min.), (VCE= —2V, Iq= —300mA)
|
OCR Scan
|
2SA1811
--300mA)
2SC4707
O-92MOD
2SA1811
S-25
|
PDF
|
