Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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2SC5120
O-126FM
D-85622
Hitachi DSA00164
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PDF
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2SC5120
Abstract: 2SA1958 Hitachi DSA00493
Text: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SC5120
2SA1958
2SC5120
2SA1958
Hitachi DSA00493
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PDF
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2SC5120
Abstract: Hitachi DSA00108
Text: 2SC5120 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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2SC5120
126FM
2SC5120
Hitachi DSA00108
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PDF
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2SC5120
Abstract: 2SA1958 TO-126F 2SA19 Hitachi DSA00125
Text: 2SA1958 Silicon PNP Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = -150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SA1958
126FM
2SC5120
2SC5120
2SA1958
TO-126F
2SA19
Hitachi DSA00125
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PDF
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2SA1958
Abstract: 2SC5120 Hitachi 2SA Hitachi DSA00493
Text: 2SA1958 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = –150 V, Cob = 5.5 pF typ • Suitable for wide band video amplifier
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Original
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2SA1958
2SC5120
2SA1958
2SC5120
Hitachi 2SA
Hitachi DSA00493
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PDF
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Hitachi DSA001650
Abstract: No abstract text available
Text: 2SA1958 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = −150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SA1958
2SC5120
O-126FM
D-85622
Hitachi DSA001650
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5120 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 500 MHz typ • High voltage and low output capacitance VCE0 = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SC5120
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5120 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics • High voltage and low output capacitance fT= 500 MHz typ VCE0 = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SC5120
D-85622
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PDF
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Untitled
Abstract: No abstract text available
Text: i HITACHI 2SC5120 Silicon NPN Epitaxial Application TO-126FM High frequency amplifier I Features • Excellent high frequency characteristics fqp = 5 0 0 MHz typ • High voltage and low output capacitance v CEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SC5120
O-126FM
2SC512Ö
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5120 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO= 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SC5120
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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PDF
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1958 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 500 MHz typ • High voltage and low output capacitance VCE0 = -150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SA1958
2SC5120
O-126FM
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1958 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 500 MHz typ • High voltage and low output capacitance VCE0 = -150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SA1958
2SC5120
O-126FM
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PDF
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