2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SA1942 東芝トランジスタ シリコンPNP三重拡散形 2SA1942 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。
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Abstract: No abstract text available
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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Abstract: 2SC5199
Text: Inchange Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage
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2sa1942
Abstract: 2SC5199
Text: SavantIC Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage
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toshiba marking code transistor
Abstract: Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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toshiba marking code transistor
Audio Power Amplifier TOSHIBA
TOSHIBA NOTE
TOSHIBA Transistor 2SC5199
2-21F1A
2SA1942
2SC5199
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New Jersey Semiconductor
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1942 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltagePIN LEASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Complement to Type 2SC5199
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2SA1942
Abstract: 2SC5199
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Complement to Type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier
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2SC5199
Abstract: 2SA1942
Text: Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage
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Abstract: 2-21F1A 2SA1942
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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2SA1942
Abstract: 2SC5199
Text: JMnic Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage PINNING
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2SC5199
Abstract: 2-21F1A 2SA1942
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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Abstract: No abstract text available
Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
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Abstract: 2-21F1A 2SA1942
Text: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. “ of
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Text: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • J Ì3 .3 + 0 .2 - Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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Text: 2SA1942 TOSHIBA 2 S A 1 942 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C
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2SC5199
Abstract: 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199
Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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TOSHIBA Transistor 2SC5199
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A1942
Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TO SHIBA 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. E P “ o f
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80W TRANSISTOR AUDIO AMPLIFIER
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Abstract: No abstract text available
Text: TO SH IB A 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 POWER AMPLIFIER APPLICATIONS. U nit in mm .3 + 0.2 20.5MAX • Complementary to 2SA1942 • Recommend for 80W High Fidelity Audio Frequency Amplifier O utput Stage. MAXIMUM RATINGS Ta = 25°C
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Text: 2SC5199 SILICON NPN TRIPLE DIFFUSED TYPE POW ER AMPLIFIER APPLICATIONS. • • U n it in m m Complementary to 2SA1942 Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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A1942
Abstract: 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TO SH IBA 2 S A 1 942 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - MAXIMUM RATINGS Tc = 25°C
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A1942
Abstract: 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TOSHIBA 2 S A 1 942 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - M A X IM U M RATINGS Ta = 25°C
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2-21F1A
Abstract: 2SA1942 2SC5199
Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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