2SC532 Search Results

2SC532 Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC532	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC532	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC532	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC532	Unknown	Cross Reference Datasheet	Scan	PDF
2SC532	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC532	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC532	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC532	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC532	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC5320	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC5320	Unknown	NPN Transistor	Scan	PDF
2SC5320	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF
2SC5320	Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)	Scan	PDF
2SC5321	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SC5321	Unknown	NPN Transistor	Scan	PDF
2SC5321	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF
2SC5321	Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)	Scan	PDF
2SC5322	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC5322	Unknown	NPN Transistor	Scan	PDF
2SC5322	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF

2SC532 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5322 Abstract: No abstract text available Text: 2SC5322 東芝トランジスタシリコンNPNエピタキシャルプレーナ形 2SC5322 ○ VHF~UHF 低雑音増幅用単位: mm • 雑音特性が優れています。 : NF = 1.4dB f = 2 GHz • 高利得です。 : \|S21e\|2 = 10dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C)	Original	2SC5322 2SC5322	PDF
Untitled Abstract: No abstract text available Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : \|S2i e\|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05	OCR Scan	2SC5322FT	PDF
VHF-UHF Band Low Noise Amplifier Abstract: 2SC5322 Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)	OCR Scan	2SC5322 16GHz VHF-UHF Band Low Noise Amplifier 2SC5322	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : \|S2le\|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5324	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v mm V H F- U H F BAND LOW NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : N F = 1 .4 d B f= 2 G H z : \|S2 1 e l2~ 1 2 d B ( f — 2 G H z ) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5324	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : \|S2l e\|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5320 16GHz	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) + 0.2 s 2 .9 - 0.3 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5323	PDF
2SC5321 Abstract: VHF-UHF Band Low Noise Amplifier Text: 2SC5321 TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : \|S2le\|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1	OCR Scan	2SC5321 SC-70 2SC5321 VHF-UHF Band Low Noise Amplifier	PDF
2SC5323 Abstract: No abstract text available Text: TO SH IBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : NF = 1.4 dB f = 2 GHz : Ga = 12 dB (f = 2 GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5323 2SC5323	PDF
2SC5324 Abstract: No abstract text available Text: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : \|S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1	OCR Scan	2SC5324 2SC5324	PDF
2SC5321 Abstract: No abstract text available Text: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) \|S2l e\|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz SC-70 006igns, 2SC5321	PDF
2SC5322 Abstract: No abstract text available Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain	OCR Scan	2SC5322 16GHz 2SC5322	PDF
2SC5322 Abstract: No abstract text available Text: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,	OCR Scan	2SC5322 2SC5322	PDF
2SC5320 Abstract: No abstract text available Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain	OCR Scan	2SC5320 2SC5320	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5321 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC532 1 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series • • Low Noise Figure High Gain 2.1 ± 0.1 NF = 1.4dB (f = 2GHz) \|S21eP = 10dB (f=2GHz)	OCR Scan	2SC5321 2SC532 16GHz S21eP	PDF
2SC5321 Abstract: bh marking Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : \|S2le\|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz SC-70 2SC5321 bh marking	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain	OCR Scan	2SC5322 16GHz	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5323	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 3 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : N F= 1.4dB f=2GHz : Ga - 12dB (f = 2GHz) 2 .9 -0 .3 11 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5323	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0.1 • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain l*- ^	OCR Scan	2SC5322 16GHz	PDF
2SC5321 Abstract: No abstract text available Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : \|S2l e\|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz 2SC5321	PDF
B F2g Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r >5 3 1 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : \|S2 l e\|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5321 16GHz S21elease B F2g	PDF
transistor P3d Abstract: No abstract text available Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : \|S2 l e\|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5320 16GHz transistor P3d	PDF
2SC5323 Abstract: VHF-UHF Band Low Noise Amplifier toshiba 2-3J1C Text: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 2.9-0.3 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) -e M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5323 2SC5323 VHF-UHF Band Low Noise Amplifier toshiba 2-3J1C	PDF

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2SC532 Search Results

2SC532 Datasheets (40)

2SC532 Datasheets Context Search

2SC5322

Untitled

VHF-UHF Band Low Noise Amplifier

Untitled

Untitled

Untitled

Untitled

2SC5321

2SC5323

2SC5324

2SC5321

2SC5322

2SC5322

2SC5320

Untitled

2SC5321

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Untitled

Untitled

2SC5321

B F2g

transistor P3d

2SC5323